An Accurate Characterization of Capture Time Constants in GaN HEMTs

Gomes, João L.; Nunes, Luís C.; Goncalves, Cristiano F.; Pedro, José C.

doi:10.1109/tmtt.2019.2921338

Cited by 42 publications

(23 citation statements)

References 29 publications

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“…The existence of electrically active surface traps located at the passivation/top-layer interface [17] and of bulk traps present in the GaN and buffer layers [18] induces effects such as current collapse [19][20][21], dynamic on-resistance (or knee walkout) [22], degradation of cut-off frequency [23], and DC-RF dispersion [24], which compromise the reliability of the devices and prevent harnessing the full potential of GaN HEMT power devices [25].…”

mentioning

confidence: 99%

“…Due to the intrinsic nature of GaN HEMTs, harsh and localized self-heating in the conducting channel may occur [26]; this effect increases with the device power density and further compromises reliability [22,27]. On one side, the electrical behavior of the traps mentioned in the above paragraph is temperature-dependent [25]. On the other side, additional phonon scattering in the channel degrades the 2DEG effective carrier mobility, leading to degraded DC and RF performance [28].…”

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confidence: 99%

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Diamond/GaN HEMTs: Where from and Where to?

Mendes

Liehr²,

Li³

2022

Materials

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Gallium nitride is a wide bandgap semiconductor material with high electric field strength and electron mobility that translate in a tremendous potential for radio-frequency communications and renewable energy generation, amongst other areas. However, due to the particular architecture of GaN high electron mobility transistors, the relatively low thermal conductivity of the material induces the appearance of localized hotspots that degrade the devices performance and compromise their long term reliability. On the search of effective thermal management solutions, the integration of GaN and synthetic diamond with high thermal conductivity and electric breakdown strength shows a tremendous potential. A significant effort has been made in the past few years by both academic and industrial players in the search of a technological process that allows the integration of both materials and the fabrication of high performance and high reliability hybrid devices. Different approaches have been proposed, such as the development of diamond/GaN wafers for further device fabrication or the capping of passivated GaN devices with diamond films. This paper describes in detail the potential and technical challenges of each approach and presents and discusses their advantages and disadvantages.

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confidence: 99%

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confidence: 99%

Diamond/GaN HEMTs: Where from and Where to?

Mendes

Liehr²,

Li³

2022

Materials

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“…Taking also into account that the main region of trapping as shown in [25] would be the upper part of the Fe-doped buffer and the channel, the capture process would have a time constant in the range of nanoseconds. Gomes et al proposed a new characterization technique for the capture time constants in GaN HEMTs [35]. Their results exhibit a fast capture, much faster than 600 ns, making its characterization with common pulsed measuring setups infeasible.…”

Section: Required Measurementsmentioning

confidence: 99%

An efficient drain-lag model for microwave GaN HEMTs based on ASM-HEMT

Beleniotis

Schnieder

Krause

et al. 2021

Int. J. Microw. Wireless Technol.

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Large-signal modeling of Gallium Nitride (GaN) based high electron mobility transistors (HEMTs) demands a proper description of trapping effects. In this paper, a new, simplified yet accurate drain-lag description is proposed, enhancing the simulation accuracy and the extraction flow of the physics-based compact model ASM-HEMT. The present study investigates the impact of drain lag on specific physical phenomena, focusing on the relation between trap states, surface-potential calculations, and electron transport properties. It is supplemented with a revised extraction procedure, minimizing the required measurements, thereby the undesired consequences of several passes on the same device, using pulsed I-V and pulsed S-parameters only, and approaches for efficient and accurate simulation results. We show that the proposed trap model is a determinative tool for simulating both small and large-signal behavior predicting precisely S-parameters and load-pull performance.

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“…Although the existing symbolic pole/zero analysis methods [8][9][10][11][12][13][14][15][16][17][18][19][20][21] incorporate some types of approximations during the calculation of transfer function, they suffer from some Disclaimer/Publisher's Note: The statements, opinions, and data contained in all publications are solely those of the individual author(s) and contributor(s) and not of MDPI and/or the editor(s). MDPI and/or the editor(s) disclaim responsibility for any injury to people or property resulting from any ideas, methods, instructions, or products referred to in the content.…”

Section: Introductionmentioning

confidence: 99%

Mathematical Root Simplification in Operational Amplifiers using an Ensemble Heuristic-Metaheuristic Algorithm

Behmanesh-Fard¹,

Yazdanjouei²,

Shokouhifar³

et al. 2023

Preprint

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Symbolic pole/zero analysis is an important step when designing an analog operational amplifier. Generally, a simplified symbolic analysis of analog circuits suffers from NP-hardness, i.e., an exponential growth of the number of symbolic terms of the transfer function with the circuit size. In this study, we present a mathematical model combined with a heuristic-metaheuristic solution method for the symbolic pole/zero simplification in operational transconductance amplifiers (OTA). At first, the circuit is symbolically solved and an improved root splitting method is applied to extract symbolic poles/zeroes from the exact expanded transfer function. Then, a hybrid algorithm based on heuristic information and a metaheuristic technique using simulated annealing is performed for the simplification of the derived symbolic pole/zero expressions. The developed method has been tested on three analog OTAs. The obtained results show the effectiveness of the proposed method to achieve accurate simplified symbolic pole/zero expressions with the least complexity.

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An Accurate Characterization of Capture Time Constants in GaN HEMTs

Cited by 42 publications

References 29 publications

Diamond/GaN HEMTs: Where from and Where to?

Diamond/GaN HEMTs: Where from and Where to?

An efficient drain-lag model for microwave GaN HEMTs based on ASM-HEMT

Mathematical Root Simplification in Operational Amplifiers using an Ensemble Heuristic-Metaheuristic Algorithm

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