An 850-nm Normal-Incidence Germanium Metal–Semiconductor–Metal Photodetector With 13-GHz Bandwidth and 8-$\mu$A Dark Current

Çiftçioğlu, Berkehan; Zhang, Jie; Sobolewski, Roman

doi:10.1109/lpt.2010.2089506

Cited by 17 publications

(18 citation statements)

References 13 publications

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“…Meanwhile, the overlapped Ge originally covering the step was removed away during the release process. Then, a 15 nm a-Si was coated on the surface to passivate Ge and serve as a Schottky barrier modulation layer [11] for the metal contacts. Finally, a metallization process is applied to make the interdigitated electrodes.…”

Section: Fabrication Processmentioning

confidence: 99%

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Rapid-melt-growth-based GeSi waveguide photodetectors and avalanche photodetectors

Tseng

Lee

2014

Silicon Photonics IX

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GeSi based photodetectors and avalanche photodetectors on silicon photonics platform have been widely studied in the past decade due to its low cost nature and compatibility with CMOS fabrication process. Conventionally, high-quality Ge on Si is obtained by a direct epitaxy growth or by a wafer/die bonding technique, which complicates the possible on-chip integration with CMOS electronics such as transimpedance amplifier, equalizer and limiting amplifier etc. Recently, rapid-melt growth of Ge on insulator emerged as a new method to produce high-quality Ge stripes. In this paper, we present our effort in making waveguide based photodetectors and avalanche photodetectors using Ge rapid-melt growth. First, we demonstrate a high-performance, high-speed GeSi heterojunction photodiode by a self-aligned microbonding technique utilizing surface tension. Such a method is subsequently extended to fabricate a novel butt-coupled, high-speed metal-semiconductor-metal Ge photodetector. At the same time, we study the possibility of operating GeSi avalanche photodetectors at a low bias voltage to be compatible with standard CMOS IC power supply. Based on the theoretical and numerical results, a new type of GeSi avalanche photodetector in three-terminal configuration is proposed and demonstrated, reaching the lowest possible operation bias voltage constrained by Zener tunneling breakdown.

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Section: Fabrication Processmentioning

confidence: 99%

“…Such an effect could hinder the operation speed. A wide bandgap material such as a-Si inserted between Ge and metal electrodes can be utilized to avoid Fermi level pinning [11]. In this work, we use this idea to assure the device can operate at high-speed data rate.…”

Section: Fabrication Processmentioning

confidence: 99%

Rapid-melt-growth-based GeSi waveguide photodetectors and avalanche photodetectors

Tseng

Lee

2014

Silicon Photonics IX

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“…Based on our prior work , 22 an MSM Ge PD with hydrogenated a-Si (a-Si:H) is designed and simulated in DAVINCI. A device with a 20-nm thick a-Si:H layer, 1.25-μm contact width, 2-μm contact spacing, with a low stress Si 3 N 4 anti-reflection coating on the top of the 62×62-μm 2 area achieves 0.224-μA dark current and 0.37-A/W responsivity at 7-V bias.…”

Section: Signalingmentioning

confidence: 99%

“…A metalsemiconductor-metal (MSM) structure is chosen over p-i-n ones to reduce parasitic capacitance per area, to allow less stringent microlens-to-PD alignment for efficient light coupling, and to simplify the contact definition in the fabrication to a single step, while achieving reasonably good bandwidth and responsivity. 22 The fabrication procedure begins with the passivation of the Ge wafer by consecutive HCl and HF dip cycles, followed by 20-nm thick hydrogenated amorphous Si (a-Si:H) deposition, serving as the surface passivation and Schottky barrier enhancement layers in order to provide low dark current and large bandwidth. Then, 240-nm thick low-stress Si 3 N 4 is chemical-vapor-deposited (CVD) on top of the a-Si layer, serving as an isolation between the electrical lines and substrate, as well as an anti-reflection coating in the active region.…”

Section: Pds and The Carrier Chipmentioning

confidence: 99%

Chip-scale demonstration of 3D integrated intrachip free-space optical interconnect

Çiftçioğlu

Berman

et al. 2012

SPIE Proceedings

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This paper presents the first chip-scale demonstration of an intra-chip free-space optical interconnect (FSOI) we recently proposed. 1 This interconnect system uses point-to-point free-space optical links to construct an all-to-all intra-chip communication network. Unlike other electrical and waveguide-based optical interconnect systems, FSOI exhibits low latency, high energy efficiency, and large bandwidth density with little degradation for long distance transmission, and hence can significantly improve the performance of future many-core chips. A 1×1-cm 2 chip prototype is fabricated on a germanium substrate with integrated photodetectors. A commercial 850-nm GaAs vertical-cavity-surface-emitting-laser (VCSEL) and fabricated fused silica micro-lenses are 3-D integrated on top of the germanium substrate. At a 1.4-cm distance, the measured optical transmission loss is 5 dB and crosstalk is less than -20 dB. The electrical-to-electrical bandwidth is 3.3 GHz, limited by the VCSEL.

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“…metal-semiconductor-metal Ge PDs with a thin layer of undoped amorphous-silicon on the substrate, enabling low dark current and large bandwidth. The PD has a 0.23-A/W responsivity without anti-reflection coating and a 13-GHz bandwidth at 7-V bias and 850 nm [15].…”

Section: Fsoi Designmentioning

confidence: 99%

A 3-D Integrated Intrachip Free-Space Optical Interconnect for Many-Core Chips

Çiftçioğlu

Berman

Zhang

et al. 2011

IEEE Photon. Technol. Lett.

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Abstract-This paper presents a new optical interconnect system for intra-chip communications based on free-space optics. It provides all-to-all direct communications using dedicated lasers and photodetectors, hence avoiding packet switching while offering ultra-low latency and scalable bandwidth. A technology demonstration prototype is built on a circuit board using fabricated germanium photodetectors, micro-lenses, commercial vertical-cavity surface-emitting lasers, and micro-mirrors. Transmission loss in an optical link of 10-mm distance and crosstalk between two adjacent links are measured as 5 dB and -26 dB, respectively. The measured small-signal bandwidth of the link is 10 GHz.

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An 850-nm Normal-Incidence Germanium Metal–Semiconductor–Metal Photodetector With 13-GHz Bandwidth and 8-$\mu$A Dark Current

Cited by 17 publications

References 13 publications

Rapid-melt-growth-based GeSi waveguide photodetectors and avalanche photodetectors

Rapid-melt-growth-based GeSi waveguide photodetectors and avalanche photodetectors

Chip-scale demonstration of 3D integrated intrachip free-space optical interconnect

A 3-D Integrated Intrachip Free-Space Optical Interconnect for Many-Core Chips

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