Amorphous ternary rare-earth gate oxides for future integration in MOSFETs

Lopes, J. M. J.; Özben, E. Durğun; Roeckerath, M.; Littmark, U.; Lupták, R.; Lenk, St.; Luysberg, M.; Besmehn, Astrid; Breuer, U.; Schubert, J.; Mantl, S.

doi:10.1016/j.mee.2009.03.065

Cited by 65 publications

(46 citation statements)

References 10 publications

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“…Gadolinium scandate competes with other oxides for replacing Hf-based high permittivity dielectrics in metal-insulator-semiconductor field effect transistors (MISFETs) [1,2,3,4,5]. This material could also be applied on high mobility substrates for high frequency applications [6].…”

Section: Introductionmentioning

confidence: 99%

Nano-laminate vs. direct deposition of high permittivity gadolinium scandate on silicon by high pressure sputtering

et al. 2015

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Section: Introductionmentioning

confidence: 99%

Nano-laminate vs. direct deposition of high permittivity gadolinium scandate on silicon by high pressure sputtering

et al. 2015

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“…3,4 In this regard, rare-earth based multicomponent oxides in the amorphous state are found to be promising candidates for the next generation dielectrics after the silicates. [5][6][7][8][9] Among binary rare earth oxides, interlanthanide oxides have been reported to have thermodynamically stable interfaces with Si and higher k-value. 10,11 To this end, we have identified lanthanide compound LGO in the ceramic form as a promising high-k dielectric material in terms of its linear, highk value with low leakage current.…”

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confidence: 99%

Dielectric properties and electrical conduction of high-k LaGdO3 ceramics

Pavunny¹,

Thomas²,

Kumar³

et al. 2012

Journal of Applied Physics

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The temperature and frequency dependent dielectric properties and leakage conduction mechanism in LaGdO3 (LGO) ceramics have been studied, and this material has been identified as a potential high-k candidate for the future complementary metal-oxide-semiconductor (CMOS) and dynamic random access memory (DRAM) technology nodes. The dielectric constant and the loss tangent at 100 kHz were ∼21.5 and ∼0.003, respectively, at ambient conditions without any significant temperature and voltage dependence. The ac conductivity shows the typical features of universal dynamic response (UDR) and obey the double power law σac=σdc+Aωn1+Bωn2 with three types of temperature dependent conduction processes involved; (i) a dc plateau (< 3 kHz) due to long range translational hopping, (ii) a mid frequency region due to the short range hopping (3–100 kHz), and (iii) a high frequency region due to localized or reorientational hopping (100–1000 kHz). The temperature dependent dc conductivity follows the Arrhenius relation with activation energies of 0.05 eV in the 200–400 K range and 0.92 eV in the 400–600 K range. The leakage current behavior reveals bulk limited Poole-Frenkel (PF) conduction mechanism and the estimated optical dielectric constant (ɛ∞) is 3.6.

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“…However, higher-ɤ (ɤ > 20) dielectric materials are required for the 22 nm node and beyond. Recent reports show that, rare earth-based oxides are promising materials (2)(3). Their properities, with ɤ values around 23-32 in the amorphous state, re-crystallization temperatures over 800 °C, large band gaps (>5.5 eV) and large band offsets (2.1 eV) will enhance the performance of CMOS.…”

Section: Introductionmentioning

confidence: 99%

Electrical Characterization of TbScO₃/TiN Gate Stacks of MOS Capacitors and MOSFETs on Strained and Unstrained SOI

Özben¹,

Nichau²,

Lopes³

et al. 2010

ECS Trans.

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We investigated the electrical and structural properties of TbScO 3 as an alternative gate dielectric. Rutherford backscattering spectrometry revealed a stoichiometric film while X-ray photo-electron spectroscopy indicated silicate formation at the interface. Capacitance-Voltage measurements resulted in well behaving C-V curves with no hysteresis and a low density of interface trap states in the range of 4x10 11 (eVcm 2 ) -1 . Fully depleted (FD) SOI and sSOI MOSFETs fabricated with a full replacement gate process show a steep subthreshold slope down to 81 mV/dec and high I on /I off ratios up to 10 8 . Low field electron mobilities of 181 cm 2 /Vsec for SOI and 350 cm 2 /Vsec for sSOI, were extracted, which are comparable to MOSFETs with Hf based oxides. Gate induced drain leakage (GIDL) investigations indicate a trap assisted band to band tunneling.

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Amorphous ternary rare-earth gate oxides for future integration in MOSFETs

Cited by 65 publications

References 10 publications

Nano-laminate vs. direct deposition of high permittivity gadolinium scandate on silicon by high pressure sputtering

Nano-laminate vs. direct deposition of high permittivity gadolinium scandate on silicon by high pressure sputtering

Dielectric properties and electrical conduction of high-k LaGdO3 ceramics

Electrical Characterization of TbScO₃/TiN Gate Stacks of MOS Capacitors and MOSFETs on Strained and Unstrained SOI

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Amorphous ternary rare-earth gate oxides for future integration in MOSFETs

Cited by 65 publications

References 10 publications

Nano-laminate vs. direct deposition of high permittivity gadolinium scandate on silicon by high pressure sputtering

Nano-laminate vs. direct deposition of high permittivity gadolinium scandate on silicon by high pressure sputtering

Dielectric properties and electrical conduction of high-k LaGdO3 ceramics

Electrical Characterization of TbScO3/TiN Gate Stacks of MOS Capacitors and MOSFETs on Strained and Unstrained SOI

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Product

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Electrical Characterization of TbScO₃/TiN Gate Stacks of MOS Capacitors and MOSFETs on Strained and Unstrained SOI