1997
DOI: 10.1134/1.1261727
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Amorphous silicon and germanium films for uncooled microbolometers

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Cited by 22 publications
(13 citation statements)
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“…The responsivity and detectivity of a bolometer are dependent on the relative magnitude of the change in resistance with temperature, i.e., Àð1=RÞdR=dT, known as the temperature coefficient of resistance (TCR). [1][2][3][4] Bolometer performance improvement is associated with an increase of the TCR magnitude. Current microbolometers are mainly amorphous silicon (a-Si) and vanadium oxide based, [1][2][3][4] which have TCR values in the range of 0.01-0.05 K À1 (see Table I), 1-6 which is low, limiting the sensitivity of the detector.…”
Section: Introductionmentioning
confidence: 99%
“…The responsivity and detectivity of a bolometer are dependent on the relative magnitude of the change in resistance with temperature, i.e., Àð1=RÞdR=dT, known as the temperature coefficient of resistance (TCR). [1][2][3][4] Bolometer performance improvement is associated with an increase of the TCR magnitude. Current microbolometers are mainly amorphous silicon (a-Si) and vanadium oxide based, [1][2][3][4] which have TCR values in the range of 0.01-0.05 K À1 (see Table I), 1-6 which is low, limiting the sensitivity of the detector.…”
Section: Introductionmentioning
confidence: 99%
“…This higher noise is believed to be due to its higher concentration of trapping centers formed by oxygen atoms, which are responsible for bulk 1/f noise. On the other hand, the measured 1/f noise performance is comparable to other amorphous semiconductor materials used for bolometer fabrication [18].…”
Section: Discussionmentioning
confidence: 84%
“…Si microbolometers typically possess a TCR in the range of 2-3%/K, however marginally high 1/f-noise has been reported. 5,30 Germanium microbolometers typically have a TCR in the range of 1%/K, however their noise level is lower than Si. 2 Silicon-germanium displays a higher TCR (2-3%/K), however are typically deposited by CVD at temperatures above 600°C to obtain the desired crystallinity.…”
Section: Introductionmentioning
confidence: 99%
“…5,30 Germanium microbolometers typically have a TCR in the range of 1%/K, however their noise level is lower than Si. 2 Silicon-germanium displays a higher TCR (2-3%/K), however are typically deposited by CVD at temperatures above 600°C to obtain the desired crystallinity. 7 VO x is a popular microbolometer material though it is not a conventional integrated circuit material.…”
Section: Introductionmentioning
confidence: 99%