Ammonothermal growth of polar and non-polar bulk GaN crystal

Mikawa, Yutaka; Ishinabe, Takayuki; Kawabata, Shinichiro; Mochizuki, Tae; Kojima, Atsuhiko; Kagamitani, Yuji; Fujisawa, Hideo

doi:10.1117/12.2078137

Cited by 36 publications

(58 citation statements)

References 9 publications

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“…[20,30,31] Typical growth rates in the c-direction are in the range of a few hundred micrometers per day [22,26,32,33] and large arbitrary oriented substrates have been demonstrated. [26,[34][35][36] Ammonothermal GaN substrates have been used in homoepitaxy [35,37,38] and as substrates for InGaN LDs. [39] Although the crystalline quality of ammonothermal GaN is very high, recent studies have shown that the high concentration of impurities [22,40,41] and native point defects [42][43][44] in the as-grown material have a significant effect on the material properties.…”

Section: Progress Reportmentioning

confidence: 99%

“…Various research groups and companies are actively pursuing this technique and 2-inch diameter crystal boules have already been demonstrated. [24][25][26][27] The current state of the art crystals have a reproducible low TD densities of around 10 4 cm −2 [26][27][28][29] and wafers sliced from ammonothermally grown boules are sufficiently flat with radius of curvature in the order of several hundred meters. [20,30,31] Typical growth rates in the c-direction are in the range of a few hundred micrometers per day [22,26,32,33] and large arbitrary oriented substrates have been demonstrated.…”

Section: Progress Reportmentioning

confidence: 99%

“…[24][25][26][27] The current state of the art crystals have a reproducible low TD densities of around 10 4 cm −2 [26][27][28][29] and wafers sliced from ammonothermally grown boules are sufficiently flat with radius of curvature in the order of several hundred meters. [20,30,31] Typical growth rates in the c-direction are in the range of a few hundred micrometers per day [22,26,32,33] and large arbitrary oriented substrates have been demonstrated. [26,[34][35][36] Ammonothermal GaN substrates have been used in homoepitaxy [35,37,38] and as substrates for InGaN LDs.…”

Section: Progress Reportmentioning

confidence: 99%

“…c) Photograph of a large m-plane oriented crystal boule grown using the acidic ammonothermal method in a lined Ni-based alloy autoclave. Reproduced with permission [26] Copyright 2016, SPIE. d) Photograph of a ≈ 450 μm thick, c-plane oriented, acidic ammonothermal GaN crystal grown in a TZM autoclave.…”

Section: Impurities In Ammonothermal Ganmentioning

confidence: 99%

“…Higher solubilities appear to translate into higher growth rates as well, with reported growth rates for basic chemistries laying between 60 and 340 μm per day [22,32] and for acidic between 250 and 960 μm per day. [26,33] Low dissolved Ga concentrations combined with high concentrations of ammonia (NH 3 ) may have an impact on the subsequent incorporation mechanisms of Ga and N into the crystal and the possible formation of defects. Currently, it is assumed that the nitrogen (N) source for growth of GaN comes from the nitrogen rich solvent (i.e., NH 3 , NH 2 , or NH 4 ).…”

Section: Progress Reportmentioning

confidence: 99%

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Defects in Single Crystalline Ammonothermal Gallium Nitride

Suihkonen

Pimputkar

Sintonen

et al. 2017

Adv Elect Materials

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Native bulk gallium nitride (GaN) has emerged as an alternative for sapphire and silicon as a substrate material for III‐N devices. While quasi‐bulk GaN substrates are currently commercially available, single crystal GaN substrates are considered essential for future high performance light emitters and power devices. The ammonothermal method is currently considered one of the most feasible methods to grow large truly bulk crystals of GaN at low cost and high structural quality. High crystalline quality GaN substrates sliced from ammonothermally grown crystals have been demonstrated and utilized in homoepitaxy for III‐N devices. However, despite the high crystalline quality the properties of as‐grown ammonothermal GaN crystals and substrates are affected by the presence of impurities and other defects that hinder their use for device applications. Here, the main developments of ammonothermal growth of GaN and the effects of impurities, native point defects, and dislocations on the material properties are summarized. Additionally, measurement techniques that enable the evaluation of point defect concentration and low dislocation density distribution over a large area on bulk GaN substrates are reviewed.

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Section: Progress Reportmentioning

confidence: 99%

Section: Progress Reportmentioning

confidence: 99%

Section: Progress Reportmentioning

confidence: 99%

Section: Impurities In Ammonothermal Ganmentioning

confidence: 99%

Section: Progress Reportmentioning

confidence: 99%

See 3 more Smart Citations

Defects in Single Crystalline Ammonothermal Gallium Nitride

Suihkonen

Pimputkar

Sintonen

et al. 2017

Adv Elect Materials

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Ammonothermal and HVPE Bulk Growth of GaN

Kucharski

Sochacki

Łucznik

et al. 2021

Wide Bandgap Semiconductors for Power Electronics

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Ammonothermal Synthesis of Nitrides: Recent Developments and Future Perspectives

Häusler

Schnick

2018

Chemistry A European J

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Nitrides represent an intriguing class of functional materials with a broad range of application fields. Within the past decade, the ammonothermal method became increasingly attractive for the synthesis and crystal growth of nitride materials. The ammonothermal approach proved to be eminently suitable for the growth of bulk III-nitride semiconductors like GaN, and furthermore provided access to numerous ternary and multinary nitrides and oxonitrides with promising optical and electronic properties. In this minireview, we will shed light on the latest research findings covering the synthesis of nitrides by this method. An overview of synthesis strategies for binary, ternary, and multinary nitrides and oxonitrides, as well as their properties and potential applications will be given. The recent development of autoclave technologies for syntheses at high temperatures and pressures, in situ methods for investigations of crystallization processes, and solubility measurements by ultrasonic velocity experiments is briefly reviewed as well. In conclusion, challenges and future perspectives regarding the synthesis and crystal growth of novel nitrides, as well as the advancement of autoclave techniques are discussed.

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Ammonothermal growth of polar and non-polar bulk GaN crystal

Cited by 36 publications

References 9 publications

Defects in Single Crystalline Ammonothermal Gallium Nitride

Defects in Single Crystalline Ammonothermal Gallium Nitride

Ammonothermal and HVPE Bulk Growth of GaN

Ammonothermal Synthesis of Nitrides: Recent Developments and Future Perspectives

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