Ammonia gas sensing using a graphene field–effect transistor gated by ionic liquid

Inaba, Akira; Yoo, Kwanghyun; Takei, Yusuke; Matsumoto, Kiyoshi; Shimoyama, Isao

doi:10.1016/j.snb.2013.12.118

Cited by 61 publications

(36 citation statements)

References 31 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…To generate TFSI self‐organized molecular ions on the GFET channel, a droplet of BMP‐TFSI ionic liquid was casted on the GFET channel for a few hours for the self‐organized TFSI interfacial layer to form. It results in uniform p‐doping to the GFET channel (Figure c) . Rinsing with isopropyl alcohol (IPA) can remove TFSI molecules partially since the TFSI molecules attach on the GFET surface via a weak van der Waals force (Figure d).…”

Section: Resultsmentioning

confidence: 99%

Lateral Graphene p–n Junctions Realized by Nanoscale Bipolar Doping Using Surface Electric Dipoles and Self‐Organized Molecular Anions

Zhang

Gong

et al. 2018

Adv Materials Inter

View full text Add to dashboard Cite

Lateral p–n junctions take the unique advantages of 2D materials, such as graphene, to enable single‐atomic layer microelectronics. A major challenge in fabrication of the lateral p–n junctions is in the control of electronic properties on a 2D atomic sheet with nanometer precision. Herein, a facile approach that employs decoration of molecular anions of bis‐(trifluoromethylsulfonyl)‐imide (TFSI) to generate p‐doping on the otherwise n‐doped graphene by positively polarized surface electric dipoles (pointing toward the surface) formed on the surface oxygen‐deficient layer “intrinsic” to an oxide ferroelectric back gate is reported. The characteristic double conductance minima V Dirac− and V Dirac + illustrated in the obtained lateral graphene p–n junctions can be tuned in the range of −1 to 0 V and 0 to +1 V, respectively, by controlling the TFSI anions and surface dipoles quantitatively. The unique advantage of this approach is in adoption of polarity‐controlled molecular ion attachment on graphene, which could be further developed for various lateral electronics on 2D materials.

show abstract

Section: Resultsmentioning

confidence: 99%

Lateral Graphene p–n Junctions Realized by Nanoscale Bipolar Doping Using Surface Electric Dipoles and Self‐Organized Molecular Anions

Zhang

Gong

et al. 2018

Adv Materials Inter

View full text Add to dashboard Cite

show abstract

“…Either planar or nanowire FET-based biosensors have been widely studied using various materials, such as Si 1 , GaN 2 , carbon nanotube (CNT) 3 , or graphene oxide 4 . Conventionally, FET-based biosensors with receptors (ex.…”

Section: Introductionmentioning

confidence: 99%

“…Field-effect transistors (FETs) attract great interest for biomolecular detection, due to their high sensitivity, small size, and label-free detection, which are suitable for point-of-care or personal homecare devices. Either planar or nanowire FET-based biosensors have been widely studied using various materials, such as Si 1 , GaN 2 , carbon nanotube (CNT) 3 , or graphene oxide 4 . Conventionally, FET-based biosensors with receptors (ex.…”

Section: Introductionmentioning

confidence: 99%

Beyond the Debye length in high ionic strength solution: direct protein detection with field-effect transistors (FETs) in human serum

Chu

Sarangadharan

Regmi

et al. 2017

Sci Rep

182

145

View full text Add to dashboard Cite

In this study, a new type of field-effect transistor (FET)-based biosensor is demonstrated to be able to overcome the problem of severe charge-screening effect caused by high ionic strength in solution and detect proteins in physiological environment. Antibody or aptamer-immobilized AlGaN/GaN high electron mobility transistors (HEMTs) are used to directly detect proteins, including HIV-1 RT, CEA, NT-proBNP and CRP, in 1X PBS (with 1%BSA) or human sera. The samples do not need any dilution or washing process to reduce the ionic strength. The sensor shows high sensitivity and the detection takes only 5 minutes. The designs of the sensor, the methodology of the measurement, and the working mechanism of the sensor are discussed and investigated. A theoretical model is proposed based on the finding of the experiments. This sensor is promising for point-of-care, home healthcare, and mobile diagnostic device.Field-effect transistors (FETs) attract great interest for biomolecular detection, due to their high sensitivity, small size, and label-free detection, which are suitable for point-of-care or personal homecare devices. Either planar or nanowire FET-based biosensors have been widely studied using various materials, such as Si 1 , GaN 2 , carbon nanotube (CNT) 3 , or graphene oxide 4 . Conventionally, FET-based biosensors with receptors (ex. antibody) immobilized on the gate region above the active channel of the FETs face an intrinsic issue, which is the severe charge screening effect in high ionic strength solutions, such as in serum or blood samples, leading to low sensitivity for direct detection of protein in the physiological environment. The Debye length in physiological salt environment (1X PBS) is near 0.7 nm, which is much smaller than the size of a regular IgG antibody (5~10 nm) 5 . In order to effectively detect proteins with receptor-immobilized FETs, the electrical measurements are usually conducted in diluted buffer solutions, such as in 0.1X PBS or 0.01X PBS, where the Debye lengths as 2.4 nm and 7.4 nm, respectively 1,6,7 . However, diluted ionic strength solution may cause the change in protein structure, resulting in the loss of protein activity, and the binding affinity as well. For most biological reactions, which occur in physiological high salt environment, a biosensor that can be used directly with physiological samples is much favored. Besides, an additional washing process is needed for conventional FET-based biosensors to remove the unbound antigen before electrical measurement, which also increases the complexity of the whole sensor system. Therefore, direct detection of the target protein in physiological sample is very demanding.Previously, several groups have reported that conventional FET-based biosensors can effectively detect proteins in physiological salt environment, using alternative current (AC) signals in drain-source voltage (V ds ), in conjunction with a reference electrode, in a relatively high frequency [8][9][10][11] . The better sensitivity of AC signals compared to that o...

show abstract

“…FETs have also been applied for gas sensing [65]. In this case, the drain current of a FET depends on the gate bias, and it can be effectively changed by exposure to the target gas The capability to operate the GFET sensors in aqueous environment is also promising for the detection of metal ions in solution.…”

Section: Graphene Gas and Chemical Sensorsmentioning

confidence: 99%

Graphene electronic sensors – review of recent developments and future challenges

Moldovan

Iñı́guez

Deen

et al. 2015

IET Circuits, Devices & Systems

View full text Add to dashboard Cite

Electronic sensors based on graphene have a high potential in many applications, due to the unique properties of the graphene material. This study is a review where the authors discuss the properties of graphene which are useful to sensing applications and they report and describe different types of graphene electronic sensors: biological, mechanical, gas and chemical sensors. They also discuss the ways to functionalise graphene and the used device structures. They compare the performance of the main types of biological, mechanical and chemical sensors. Finally, they explain the future challenges of graphene-based sensors, in order to make graphene sensing systems and smart sensors, which would be their main breakthrough application. 1 Motivation and background After the award of the 2010 Nobel prize in Physics from 'groundbreaking experiments regarding the two-dimensional (2D) material graphene', there has been huge interest in using graphene for various applications including in electronics, photonics, displays, optoelectronics, photovoltaics, batteries and sensing. The significant amount of research work for the variety of applications is stimulated by graphene's exceptional material propertieselectrical, optical, thermal, mechanical and magnetic. Interested readers can consult [1-5] for an excellent introduction to graphene, its road map and what are some interesting applications of this amazing material. Graphene has several important properties including † Thinnest material making it suitable for flexible electronics, pressure sensors, electronic paper and so on. † Largest surface area per unit weight (∼2.7 × 10 3 m 2 /g) which is very important for sensing applications. † Excellent mechanical properties including being among the strongest material ever measured; extremely stiff and even stiffer than diamond; and very stretchable with up to ∼20% elasticity that are very important for sensors, flexible electronics and composites. † Record thermal conductivity that is higher than diamond for applications such as heat sinks to help alleviate thermal problems. † High current carrying capabilities, >10 2 higher than copper that makes it an exciting candidate for high-current density applications in nanoscale circuits. † Impermeable, for example, helium gas cannot get through which is important for nanofluidics and barriers. † Excellent electronic properties of very high intrinsic mobility; (>10 2 higher than silicon); charge carriers have zero rest mass; and long mean free path at room temperature on approximate millimetre range, properties that are critical for very high frequency electronics or terahertz imaging.

show abstract

Ammonia gas sensing using a graphene field–effect transistor gated by ionic liquid

Cited by 61 publications

References 31 publications

Lateral Graphene p–n Junctions Realized by Nanoscale Bipolar Doping Using Surface Electric Dipoles and Self‐Organized Molecular Anions

Lateral Graphene p–n Junctions Realized by Nanoscale Bipolar Doping Using Surface Electric Dipoles and Self‐Organized Molecular Anions

Beyond the Debye length in high ionic strength solution: direct protein detection with field-effect transistors (FETs) in human serum

Graphene electronic sensors – review of recent developments and future challenges

Contact Info

Product

Resources

About