Aluminum plasmonic waveguides co-integrated with Si3N4 photonics using CMOS processes

Dabos, George; Manolis, Athanasios; Tsiokos, D.; Ketzaki, Dimitra; Chatzianagnostou, E.; Markey, Laurent; Rusakov, D.; Weeber, Jean-Claude; Dereux, Alain; Giesecke, Anna Lena; Porschatis, Caroline; Wahlbrink, T.; Chmielak, Bartos; Pleros, Nikos

doi:10.1038/s41598-018-31736-4

Cited by 30 publications

(7 citation statements)

References 35 publications

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“…This work opens the door to the development of modular plasmonic circuit elements that can be seamlessly integrated on off-theshelf photonic waveguides. Note that there has been a recent discussion of CMOS-compatible hybrid plasmonic waveguides 47,48 , which requires using aluminum or copper as metals. We believe that this PIC can be easily fabricated using CMOS-compatible metals such as Cu and Al, which would result in rotator modules with comparable TE-to-TM conversion efficiencies 34 , as well as focuser modules with similar enhancement 38 (see Supplementary Fig.…”

Section: Discussionmentioning

confidence: 99%

Modular nonlinear hybrid plasmonic circuit

et al. 2020

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Photonic integrated circuits (PICs) are revolutionizing nanotechnology, with far-reaching applications in telecommunications, molecular sensing, and quantum information. PIC designs rely on mature nanofabrication processes and readily available and optimised photonic components (gratings, splitters, couplers). Hybrid plasmonic elements can enhance PIC functionality (e.g., wavelength-scale polarization rotation, nanoscale optical volumes, and enhanced nonlinearities), but most PIC-compatible designs use single plasmonic elements, with more complex circuits typically requiring ab initio designs. Here we demonstrate a modular approach to post-processes off-the-shelf silicon-on-insulator (SOI) waveguides into hybrid plasmonic integrated circuits. These consist of a plasmonic rotator and a nanofocusser, which generate the second harmonic frequency of the incoming light. We characterize each component's performance on the SOI waveguide, experimentally demonstrating intensity enhancements of more than 200 in an inferred mode area of 100 nm 2 , at a pump wavelength of 1320 nm. This modular approach to plasmonic circuitry makes the applications of this technology more practical.

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Section: Discussionmentioning

confidence: 99%

Modular nonlinear hybrid plasmonic circuit

et al. 2020

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“…Since Al and Si are CMOS compatible materials, such hybrid nanoantennas can potentially be integrated into optoelectronic CMOS chips. 40 Note that Al is the key for the fabrication process used in this study, because it serves as a hard mask for the dry etching of pure Si and SiO 2 and as a plasmonic component.…”

Section: ■ Nanofabricationmentioning

confidence: 99%

Hybrid Metal-Dielectric Metasurfaces for Refractive Index Sensing

et al. 2020

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Hybrid metal-dielectric nanostructures have recently gained prominence because they combine strong field enhancement of plasmonic metals and the several low-loss radiation channels of dielectric resonators, which are qualities pertaining to the best of both worlds. In this work, an array of such hybrid nanoantennas is successfully fabricated over a large area and utilized for bulk refractive index sensing with a sensitivity of 208 nm/RIU. Each nanoantenna combines a Si cylinder with an Al disk, separated by a SiO 2 spacer. Its optical response is analyzed in detail using the multipoles supported by its subparts and their mutual coupling. The nanoantenna is further modified experimentally with an undercut in the SiO 2 region to increase the interaction of the electric field with the background medium, which augments the sensitivity to 245 nm/RIU. A detailed multipole analysis of the hybrid nanoantenna supports our experimental findings.

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“…TheSi3N4 waveguide is combined with the plasmonics photonic platform which has high data traffic of 25 Gb/s. The first of its kind of aluminium plasmonic strip integration with a low loss Si3N4 photonics platform has proposed in [100] and is shown in Fig. 5(d).This cointegrated platform is helpful for the biosensing and onchip interconnect applications.…”

Section: Hybrid Integration Of Si3n4 For Various Photonic Integramentioning

confidence: 99%

Review of Recent Progress on Silicon Nitride-Based Photonic Integrated Circuits

et al. 2020

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Silicon photonic devices are being used in the photonics industry over the past three decades has helped in realizing large-scale photonic integrated circuits. Silicon nitride (Si3N4) is another CMOScompatible platform that provides several advantages such as low loss, high optical power tolerance, and broad spectral operation band from visible to infrared wavelengths. Recently, the combination of Si3N4waveguide technology with silicon photonics and III-V materials has opened up new areas in the field of on-chip applications. Researchers in this field are primarily focusing on its applications such as on-chip gas sensing, nonlinear optical signal processing, and label-free biosensors based on photonic integrated circuits. In this review paper, we discuss Si3N4material-based platforms for variety of applications with devices ranging from passive to active and hybrid photonic devices.

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Aluminum plasmonic waveguides co-integrated with Si3N4 photonics using CMOS processes

Cited by 30 publications

References 35 publications

Modular nonlinear hybrid plasmonic circuit

Modular nonlinear hybrid plasmonic circuit

Hybrid Metal-Dielectric Metasurfaces for Refractive Index Sensing

Review of Recent Progress on Silicon Nitride-Based Photonic Integrated Circuits

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