Review of Recent Progress on Silicon Nitride-Based Photonic Integrated Circuits

Sharma, T. K.; Wang, Jiaqi; Kaushik, Brajesh Kumar; Cheng, Zhenzhou; Kumar, Roshan; Zhao, Wei; Li, Xuejin

doi:10.1109/access.2020.3032186

Cited by 66 publications

(37 citation statements)

References 99 publications

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“…Silicon nitride on insulator (SiNOI) waveguide platform, where the insulator here is the silicon dioxide, offers numerous advantages for various applications [ 12 , 13 , 14 , 15 ]. Similar to silicon on insulator (SOI) platform SiNOI is a complementary metal-oxide semiconductor (CMOS) compatible allowing for mass-scale and low-cost fabrication [ 14 , 15 ]. It also allows for monolithic integration with silicon devices and other electronic circuitry [ 12 ].…”

Section: Introductionmentioning

confidence: 99%

Optimization of Silicon Nitride Waveguide Platform for On-Chip Virus Detection

Shamy

Swillam

2022

Sensors

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This work presents a rigorous and generic sensitivity analysis of silicon nitride on silicon dioxide strip waveguide for virus detection. In general, by functionalizing the waveguide surface with a specific antibodies layer, we make the optical sensor sensitive only to a particular virus. Unlike conventional virus detection methods such as polymerase chain reaction (PCR), integrated refractive index (RI) optical sensors offer cheap and mass-scale fabrication of compact devices for fast and straightforward detection with high sensitivity and selectivity. Our numerical analysis includes a wide range of wavelengths from visible to mid-infrared. We determined the strip waveguide’s single-mode dimensions and the optimum dimensions that maximize the sensitivity to the virus layer attached to its surface at each wavelength using finite difference eigenmode (FDE) solver. We also compared the strip waveguide with the widely used slot waveguide. Our theoretical study shows that silicon nitride strip waveguide working at lower wavelengths is the optimum choice for virus detection as it maximizes both the waveguide sensitivity (Swg) and the figure of merit (FOM) of the sensor. The optimized waveguides are well suited for a range of viruses with different sizes and refractive indices. Balanced Mach–Zehnder interferometer (MZI) sensors were designed using FDE solver and photonic circuit simulator at different wavelengths. The designed sensors show high FOM at λ = 450 nm ranging from 500 RIU−1 up to 1231 RIU−1 with LMZI = 500 µm. Different MZI configurations were also studied and compared. Finally, edge coupling from the fiber to the sensor was designed, showing insertion loss (IL) at λ = 450 nm of 4.1 dB for the design with FOM = 500 RIU−1. The obtained coupling efficiencies are higher than recently proposed fiber couplers.

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Section: Introductionmentioning

confidence: 99%

Optimization of Silicon Nitride Waveguide Platform for On-Chip Virus Detection

Shamy

Swillam

2022

Sensors

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“…Despite the fact that the high price of PICs compared to that of electronic-integrated circuits currently acts as a barrier for its application, scientific interest in this technology is continuously emerging [ 9 ]. Sharma et al [ 10 ] provided an overview of the latest achievements of SiNx-based PICs, highlighting the benefits of these devices such as the small signal loss or the ability to work with wide-wavelength ranges. Frigg et al [ 11 ] found that SiNx thin films deposited by direct current sputtering is able to further decrease the loss, which is attributed to the lack of hydrogen bonds compared to its other chemical vapor deposited counterparts.…”

Section: Introductionmentioning

confidence: 99%

Silicon Nitride and Hydrogenated Silicon Nitride Thin Films: A Review of Fabrication Methods and Applications

Hegedűs

Balázsi

2021

Materials

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Silicon nitride (SiNx) and hydrogenated silicon nitride (SiNx:H) thin films enjoy widespread scientific interest across multiple application fields. Exceptional combination of optical, mechanical, and thermal properties allows for their utilization in several industries, from solar and semiconductor to coated glass production. The wide bandgap (~5.2 eV) of thin films allows for its optoelectronic application, while the SiNx layers could act as passivation antireflective layers or as a host matrix for silicon nano-inclusions (Si-ni) for solar cell devices. In addition, high water-impermeability of SiNx makes it a potential candidate for barrier layers of organic light emission diodes (OLEDs). This work presents a review of the state-of-the-art process techniques and applications of SiNx and SiNx:H thin films. We focus on the trends and latest achievements of various deposition processes of recent years. Historically, different kinds of chemical vapor deposition (CVD), such as plasma enhanced (PE-CVD) or hot wire (HW-CVD), as well as electron cyclotron resonance (ECR), are the most common deposition methods, while physical vapor deposition (PVD), which is primarily sputtering, is also widely used. Besides these fabrication methods, atomic layer deposition (ALD) is an emerging technology due to the fact that it is able to control the deposition at the atomic level and provide extremely thin SiNx layers. The application of these three deposition methods is compared, while special attention is paid to the effect of the fabrication method on the properties of SiNx thin films, particularly the optical, mechanical, and thermal properties.

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“…In addition, Si 3 N 4 thermo-optical coe cient is one order of magnitude lower than Si [13], hence Si 3 N 4 based devices are less sensitive to temperature uctuations. Moreover, SiNOI platform has wider transparency range, from visible to mid-infrared, compared to SOI platform [12][13][14][15]. This allows the realization of photonic applications outside the telecom bands, such as integrated optical phased arrays for LIDAR applications [16].…”

Section: Introductionmentioning

confidence: 99%

“…Finally, while silicon have large Kerr effect the two-photon absorption (TPA) prevents e cient nonlinear applications. Si 3 N 4 on the other hand, has adequate Kerr nonlinearity and almost zero TPA [14][15]. Thus, SiNOI platform allow for frequency comb as well as supercontinuum generation [17][18], which are essential for high data-rate telecommunications, high-resolution spectroscopy and frequency metrology [19].…”

Section: Introductionmentioning

confidence: 99%

“…Silicon nitride on insulator (SiNOI) waveguide platform, where insulator here is the silicon dioxide, offers numerous advantages for various applications [12][13][14][15]. Similar to SOI platform SiNOI is CMOS compatible allowing for mass-scale and low cost fabrication [14][15]. It also allows for monolithic integration with silicon devices and other electronic circuitry [12].…”

Section: Introductionmentioning

confidence: 99%

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Study of Silicon Nitride Waveguide Platform for On-Chip Virus Detection: Prospects for COVID-19

Shamy

Swillam

2021

Preprint

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This work presents a rigorous sensitivity analysis of silicon nitride on silicon dioxide strip waveguide for virus detection, focusing on COVID-19. In general, by functionalizing the waveguide surface with specific antibodies layer, we make the optical sensor sensitive only to a particular virus. Unlike conventional virus detection methods such as polymerase chain reaction (PCR), integrated refractive index (RI) optical sensors offer cheap and mass-scale fabrication of compact devices for fast and straightforward detection with high sensitivity and selectivity. Our analysis includes a wide range of wavelengths from visible to mid-infrared. We determined the strip waveguide's single-mode dimensions and the optimum dimensions that maximize the sensitivity to the virus layer attached to its surface at each wavelength. We also compared the strip waveguide to the widely used slot waveguide. Our study shows that silicon nitride strip waveguide working at lower wavelengths is the optimum choice for virus detection as it maximizes both the waveguide sensitivity (Swg) and the figure of merit (FOM) of the sensor. Furthermore, the optimized waveguide can work for a range of viruses. Balanced Mach-Zehnder interferometer (MZI) sensors were designed at different wavelengths showing high FOM at λ = 450nm ranging from 500 RIU-1 up to 1231 RIU-1 with LMZI=500 µm. Different MZI configurations were also studied and compared. Finally, edge coupling from the fiber to the sensor was designed, showing insertion loss (IL) at λ = 450nm of 4.1 dB for the design with FOM = 500 RIU-1. The obtained coupling efficiencies are higher than recently proposed fiber couplers.

show abstract

Review of Recent Progress on Silicon Nitride-Based Photonic Integrated Circuits

Cited by 66 publications

References 99 publications

Optimization of Silicon Nitride Waveguide Platform for On-Chip Virus Detection

Optimization of Silicon Nitride Waveguide Platform for On-Chip Virus Detection

Silicon Nitride and Hydrogenated Silicon Nitride Thin Films: A Review of Fabrication Methods and Applications

Study of Silicon Nitride Waveguide Platform for On-Chip Virus Detection: Prospects for COVID-19

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