Aluminum nitride and alumina composite film fabricated by DC plasma processes

Wang, Paul W.; Sui, Shixian; Wang, Wensheng; Durrer, William

doi:10.1016/s0040-6090(96)09270-x

Cited by 50 publications

(25 citation statements)

References 10 publications

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“…The N 1s peak observed at 397.3 eV corresponds to the binding energy of N 1s in the N-Al bond, 31 and the other peak at 399.5 eV is N 1s in the N-N bond. 31 The results corroborate the formation of AlN. The Al 2p signal in Fig.…”

Section: Resultssupporting

confidence: 76%

Synthesis of aluminum nitride films by plasma immersion ion implantation–deposition using hybrid gas–metal cathodic arc gun

Shen

Chu

2004

Review of Scientific Instruments

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Articles you may be interested inCrystal AlN deposited at low temperature by magnetic field enhanced plasma assisted atomic layer deposition J. Vac. Sci. Technol. A 31, 01A114 (2013); 10.1116/1.4764112 Fourth-generation plasma immersion ion implantation and deposition facility for hybrid surface modification layer fabrication Rev. Sci. Instrum. 79, 023306 (2008); 10.1063/1.2870088Passivation layer on polyimide deposited by combined plasma immersion ion implantation and deposition and cathodic vacuum arc technique Characteristics and anticoagulation behavior of polyethylene terephthalate modified by C 2 H 2 plasma immersion ion implantation-deposition J.Aluminum nitride ͑AlN͒ is of interest in the industry because of its excellent electronic, optical, acoustic, thermal, and mechanical properties. In this work, aluminum nitride films are deposited on silicon wafers ͑100͒ by metal plasma immersion ion implantation and deposition ͑PIIID͒ using a modified hybrid gas-metal cathodic arc plasma source and with no intentional heating to the substrate. The mixed metal and gaseous plasma is generated by feeding the gas into the arc discharge region. The deposition rate is found to mainly depend on the Al ion flux from the cathodic arc source and is only slightly affected by the N 2 flow rate. The AlN films fabricated by this method exhibit a cubic crystalline microstructure with stable and low internal stress. The surface of the AlN films is quite smooth with the surface roughness on the order of 1/2 nm as determined by atomic force microscopy, homogeneous, and continuous, and the dense granular microstructures give rise to good adhesion with the substrate. The N to Al ratio increases with the bias voltage applied to the substrates. A fairly large amount of O originating from the residual vacuum is found in the samples with low N:Al ratios, but a high bias reduces the oxygen concentration. The compositions, microstructures and crystal states of the deposited films are quite stable and remain unchanged after annealing at 800°C for 1 h. Our hybrid gas-metal source cathodic arc source delivers better AlN thin films than conventional PIIID employing dual plasmas.

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Section: Resultssupporting

confidence: 76%

Synthesis of aluminum nitride films by plasma immersion ion implantation–deposition using hybrid gas–metal cathodic arc gun

Shen

Chu

2004

Review of Scientific Instruments

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“…The optical, mechanical and gas barrier properties of the AlON films have also been investigated [1][2][3]9,11]. However, little attention has been paid to the preparation of AlON films by chemical vapor deposition (CVD).…”

Section: Introductionmentioning

confidence: 99%

Optical and mechanical properties of nanocrystalline aluminum oxynitride films prepared by electron cyclotron resonance plasma enhanced chemical vapor deposition

Xiao

Jiang

2004

Journal of Crystal Growth

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“…3 showed Al2p and N1s narrow scan spectra of the N-Al co-doped ZnO (Zn:N:Al = 1:3:0.1) deposited on n-type silicon substrate. The peak around 75 eV is attributed to Al2p of N-Al bonds, considering the value reported for AlN film (74.2 eV) [17]. There are two basic possible bonds of N in ZnO: O-N and Zn-N, which can be regarded as N replacement of O and Zn, respectively [15].…”

Section: Resultsmentioning

confidence: 96%

Structural and electrical properties of p-type ZnO films prepared by Ultrasonic Spray Pyrolysis

et al. 2007

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Aluminum nitride and alumina composite film fabricated by DC plasma processes

Cited by 50 publications

References 10 publications

Synthesis of aluminum nitride films by plasma immersion ion implantation–deposition using hybrid gas–metal cathodic arc gun

Synthesis of aluminum nitride films by plasma immersion ion implantation–deposition using hybrid gas–metal cathodic arc gun

Optical and mechanical properties of nanocrystalline aluminum oxynitride films prepared by electron cyclotron resonance plasma enhanced chemical vapor deposition

Structural and electrical properties of p-type ZnO films prepared by Ultrasonic Spray Pyrolysis

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