Synthesis of aluminum nitride films by plasma immersion ion implantation–deposition using hybrid gas–metal cathodic arc gun

Abstract

Articles you may be interested inCrystal AlN deposited at low temperature by magnetic field enhanced plasma assisted atomic layer deposition J. Vac. Sci. Technol. A 31, 01A114 (2013); 10.1116/1.4764112 Fourth-generation plasma immersion ion implantation and deposition facility for hybrid surface modification layer fabrication Rev. Sci. Instrum. 79, 023306 (2008); 10.1063/1.2870088Passivation layer on polyimide deposited by combined plasma immersion ion implantation and deposition and cathodic vacuum arc technique Characteristics and anticoagulation behavior of polyethylene terephthalate modified by C 2 H 2 plasma immersion ion implantation-deposition J.Aluminum nitride ͑AlN͒ is of interest in the industry because of its excellent electronic, optical, acoustic, thermal, and mechanical properties. In this work, aluminum nitride films are deposited on silicon wafers ͑100͒ by metal plasma immersion ion implantation and deposition ͑PIIID͒ using a modified hybrid gas-metal cathodic arc plasma source and with no intentional heating to the substrate. The mixed metal and gaseous plasma is generated by feeding the gas into the arc discharge region. The deposition rate is found to mainly depend on the Al ion flux from the cathodic arc source and is only slightly affected by the N 2 flow rate. The AlN films fabricated by this method exhibit a cubic crystalline microstructure with stable and low internal stress. The surface of the AlN films is quite smooth with the surface roughness on the order of 1/2 nm as determined by atomic force microscopy, homogeneous, and continuous, and the dense granular microstructures give rise to good adhesion with the substrate. The N to Al ratio increases with the bias voltage applied to the substrates. A fairly large amount of O originating from the residual vacuum is found in the samples with low N:Al ratios, but a high bias reduces the oxygen concentration. The compositions, microstructures and crystal states of the deposited films are quite stable and remain unchanged after annealing at 800°C for 1 h. Our hybrid gas-metal source cathodic arc source delivers better AlN thin films than conventional PIIID employing dual plasmas.

Formation Processes of a Solid Electrolyte Interphase at a Silicon/Sulfide Electrolyte Interface in a Model All-Solid-State Li-Ion Battery

“…50 The plasmaized Si reacts with the O 2 gas remaining in the CAPD chamber to generate the Si oxides. 51,52 The presence of SiO 2 is consistent with the diffraction spots observed in the ED pattern, at approximately 3.64 Å. In the Si 2p spectrum, the main peaks are observed at 99.0 and 98.4 eV, which may be assigned to the Si−Si bonds of Si 0 .…”

“…56 Si−O is derived from the reaction of plasmaized Si with the O 2 gas remaining in the CAPD chamber. 51,52 The S 1s and P 1s HAXPES peaks observed at 2470.0 and 2148.9 eV, respectively, may be assigned to the PS 4 3− bonds in amorphous Li 3 PS 4 , 35 which corresponds to the Li 3 PS 4 film. Another P 1s peak observed at 2146.5 eV is assigned to the P 2 S 6 4− bonds.…”

Optical Properties of Amorphous AlN Thin Films on Glass and Silicon Substrates Grown by Single Ion Beam Sputtering

“…The peak at 611 cm À1 is due to the silicon substrate and two other peaks are related to the Al-N bond, which is very close to the characteristic value of aluminum nitride. [24][25][26] It is obvious from Fig. 2 that there is any structural difference between films A and B however, the intensity of the absorption peak concerning the Al-N bond for sample B is higher than that of sample A owing to the increase in AlN film thickness.…”

Effects of V/III Ratios on the Properties of AlN Grown on Si (111) Substrate by LP-MOCVD

“…AlN has wide band gap (6.2 eV), high breakdown voltage high thermal conductivity, good acoustic velocity, high dielectric constant (8.5), high hardness, and high wear resistance, which make it suitable for various applications [1,2] , such as optoelectronic devices (especially in the UV region), high power and high temperature applications, surface acoustic wave devices, dielectric alternatives to SiO 2 for MOSFETs, hard films and optical films, etc. Moreover, AlN thin film can be used as a buffer layer to solve the mismatch problems existed in the epitaxial growth of some wide band gap materials on Si or sapphire substrates [3] .…”