Aluminium Induced Crystallization of Amorphous Germanium

Kovàcs, István; Geszti, O.; Harmat, P.; Radnóczi, G.

doi:10.1002/1521-396x(199705)161:1<153::aid-pssa153>3.0.co;2-6

Cited by 11 publications

(4 citation statements)

References 21 publications

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“…[2][3][4] Although MIC involving high levels of Al reduces the crystallization temperature of Ge to as low as 100°C, the semiconductor properties are severely degraded by metal contamination and the grown poly-Ge layer possesses prohibitively low mobilities for high-performance devices. Aluminuminduced crystallization of germanium has been widely investigated by forming multilayers of Al/ Ge.…”

Section: Introductionmentioning

confidence: 99%

Low-temperature copper-induced lateral growth of polycrystalline germanium assisted by external compressive stress

Hekmatshoar

Mohajerzadeh

Shahrjerdi

et al. 2005

Journal of Applied Physics

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Articles you may be interested inEffect of bilayer geometry on the diffusion of Ni in amorphous Si and the consequent growth of silicides J. Vac. Sci. Technol. B 30, 061203 (2012); 10.1116/1.4757134Hydrogenation-assisted nanocrystallization of amorphous silicon by radio-frequency plasma-enhanced chemical vapor depositionCopper-induced lateral growth of polycrystalline germanium ͑poly-Ge͒ at temperatures as low as 150°C was enabled by the application of an external mechanical stress during the annealing step of sample processing. An equivalent compressive strain of 0.05% was externally applied at 150°C for 10 h to a deposited amorphous Ge layer and crystalline growth rates of 2.5 and 1.8 m / h were observed in directions parallel and perpendicular to the stress axis, respectively. These results were confirmed by scanning electron microscope and transmission electron microscopy ͑TEM͒ analyses. In addition, TEM and x-ray diffraction analyses indicate that a fraction of poly-Ge annealed in the presence of applied compressive stress possessed a tetragonal structure with space-group P4 3 2 1 2. The presence of the tetragonal phase is hypothesized to be the primary mechanism responsible for the lateral growth of poly-Ge.

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Section: Introductionmentioning

confidence: 99%

Low-temperature copper-induced lateral growth of polycrystalline germanium assisted by external compressive stress

Hekmatshoar

Mohajerzadeh

Shahrjerdi

et al. 2005

Journal of Applied Physics

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“…5,6 Metal-induced crystallization (MIC) may occur in hermetic films during MEMS packaging. [7][8][9][10] In MIC, metal induces crystallization of semiconductor at a low temperature. The driving force for MIC is the difference between the free energies of the crystallized phase and the amorphous phase.…”

Section: Introductionmentioning

confidence: 86%

Elucidating the Metal-Induced Crystallization and Diffusion Behavior of Al/a-Ge Thin Films

Yeh

Yang

Lee

et al. 2011

Journal of Elec Materi

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As used in wafer-level bonding in microelectromechanical system (MEMS) devices, the eutectic Al/a-Ge bilayer is characterized by its remarkable hermetic sealing after annealing. For MEMS packaging, this study investigates metal-induced crystallization (MIC) of the amorphous Ge and the layer exchange of Al and Ge, mainly by scanning electron microscopy (SEM), energy-dispersive x-ray (EDX) analysis, and x-ray photoelectron spectroscopy (XPS). A kinetic mechanism to explain the layer exchange of Al and Ge is developed. Experimental results indicate that round-shaped extrusions form on the upper surface of the Ge layer when the bilayer is annealed at 400°C, i.e., close to the Al-Ge eutectic temperature. The morphology and the formation of the extrusions are also discussed. Finally, the bilayer is tested by immersion in red ink, with these results indicating that no red ink penetrates the bonding area of two bonded bilayer films. Therefore, results of this study demonstrate the feasibility of applying the eutectic Al/a-Ge bilayer to MEMS as a hermetic sealing material.

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“…However, the Ge films from these methods tend to have small grain sizes and random orientations. Another, more promising fabrication approach is Al induced crystallization (AIC), which has been widely investigated in the past several decades [6][7][8][9][10]. Using this technique, high (111) orientation and large crystal grains can be acquired, with a lower operational temperature.…”

Section: Introductionmentioning

confidence: 99%

High (1 1 1) orientation poly-Ge film fabricated by Al induced crystallization without the introduction of AlO x interlayer

Wang

Liu

et al. 2015

Materials Research Bulletin

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Aluminium Induced Crystallization of Amorphous Germanium

Cited by 11 publications

References 21 publications

Low-temperature copper-induced lateral growth of polycrystalline germanium assisted by external compressive stress

Low-temperature copper-induced lateral growth of polycrystalline germanium assisted by external compressive stress

Elucidating the Metal-Induced Crystallization and Diffusion Behavior of Al/a-Ge Thin Films

High (1 1 1) orientation poly-Ge film fabricated by Al induced crystallization without the introduction of AlO x interlayer

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