Articles you may be interested inVoltage linearity modulation and polarity dependent conduction in metal-insulator-metal capacitors with atomiclayer-deposited Al2O3/ZrO2/SiO2 nano-stacks Influence of precursor chemistry and growth temperature on the electrical properties of SrTiO 3 -based metalinsulator-metal capacitors grown by atomic layer deposition J. Vac. Sci. Technol. B 29, 01AC04 (2011); 10.1116/1.3525280 Impact of crystallization behavior of Sr x Ti y O z films on electrical properties of metal-insulator-metal capacitors with TiN electrodes Appl. Phys. Lett. 97, 162906 (2010); 10.1063/1.3505323 Atomic-layer-deposited Al 2 O 3 -Hf O 2 -Al 2 O 3 dielectrics for metal-insulator-metal capacitor applications Appl. Phys. Lett. 87, 053501 (2005); 10.1063/1.2005397Low temperature crystallization of high permittivity Ta oxide using an Nb oxide thin film for metal/insulator/metal capacitors in dynamic random access memory applicationsThe possibilities to grow thin films of SrTiO 3 and Al 2 O 3 by atomic layer deposition for stacked metal-insulator-metal capacitors have been investigated in this work. In order to tune the functional properties of the capacitors, different processing steps have been employed to realize different combinations of the dielectric stacks. Electrical properties, extracted after the postdeposition annealing and sputter deposition of the Au top electrodes, indicated that the metal-insulator-metal (MIM) structures with additional Al 2 O 3 layer provided better leakage currents densities, compared to the ones with single SrTiO 3 based MIM capacitors, but the dielectric constant values have also decreased if additional Al 2 O 3 film was inserted. Attempts to optimize the properties of the MIM stacks have been done by manufacturing heterostructures of Al 2 O 3 /SrTiO 3 /Al 2 O 3 as well as SrTiO 3 /Al 2 O 3 /SrTiO 3 . In the first case, Al 2 O 3 prevented the crystallization of SrTiO 3 in the multilayer dielectric structure and therefore reduced the total capacitance density of the particular MIM stack, whereas the SrTiO 3 /Al 2 O 3 /SrTiO 3 stack was found to possess superior electrical properties. Leakage current density as low as $10 À8 A/cm 2 at 2 V and the dielectric constant value of 40 have been extracted.