Atomic layer deposition of Ru from CpRu(CO)2Et using O2 gas and O2 plasma

Abstract

Document VersionPublisher's PDF, also known as Version of Record (includes final page, issue and volume numbers)Please check the document version of this publication:• A submitted manuscript is the author's version of the article upon submission and before peer-review. There can be important differences between the submitted version and the official published version of record. People interested in the research are advised to contact the author for the final version of the publication, or visit the DOI to the publisher's website.• The final author version and the galley proof are versions of the publication after peer review.• The final published version features the final layout of the paper including the volume, issue and page numbers. Link to publication General rightsCopyright and moral rights for the publications made accessible in the public portal are retained by the authors and/or other copyright owners and it is a condition of accessing publications that users recognise and abide by the legal requirements associated with these rights.• Users may download and print one copy of any publication from the public portal for the purpose of private study or research.• You may not further distribute the material or use it for any profit-making activity or commercial gain • You may freely distribute the URL identifying the publication in the public portal ? Take down policyIf you believe that this document breaches copyright please contact us providing details, and we will remove access to the work immediately and investigate your claim. The metalorganic precursor cyclopentadienylethyl͑dicarbonyl͒ruthenium ͑CpRu͑CO͒ 2 Et͒ was used to develop an atomic layer deposition ͑ALD͒ process for ruthenium. O 2 gas and O 2 plasma were employed as reactants. For both processes, thermal and plasma-assisted ALD, a relatively high growth-per-cycle of ϳ1 Å was obtained. The Ru films were dense and polycrystalline, regardless of the reactant, yielding a resistivity of ϳ16 ⍀ cm. The O 2 plasma not only enhanced the Ru nucleation on the TiN substrates but also led to an increased roughness compared to thermal ALD.

Characterization of Ru thin-film conductivity upon atomic layer deposition on H-passivated Si(111)

“…The absence of the RuO 2 peaks (expected 0.65 eV higher relatively to the position of the Ru3d 5/2 peak 26 ) in XPS data is in agreement with the XRD spectra (Fig. 4) that are devoid of any RuO 2 phase (in agreement to the XRD data published by Leick et al 2 ). The C1s peak position due to the residual carbon was deconvoluted in the 284-285 eV range, to account for CO and CH x species that constitute the Ru precursor.…”

“…Substituting the values of w p and C d from Table I in Eqs. (2) and 3, the Drude-derived resistivity of the Ru islands can be calculated. Using these data along with the fraction f 1 of the Ruthenium phase (f Ru top ; tabulated in Table II) as an input into the Landauer model Eq.…”

“…ALD deposition of Ru had been recently explored using a variety of precursors and reactants. [1][2][3] The interest in Ru deposition arises from its high work function, low bulk resistivity, and ability to form stable conductive oxides. In this manuscript, we investigate the electrical characteristics (conductivity) of ultra-thin Ru films on H-passivated Si surfaces as a function of the number of Ru ALD cycles.…”

Coverage and Stability of NHx Terminated Cobalt and Ruthenium Surfaces: a First Principles Investigation

“…4 Other Ru precursors such as Ru(EtCp)2 and CpRu(CO)2Et have also been developed. 34,35 Generally, the deposition temperature is above 200 °C for these metal organic precursors. 36,37 As pointed out earlier, oxygen can oxidize metal surface and use of N-plasma is therefore important for the deposition of metals.…”

(Invited) Catalytic Surface Reactions during Nucleation and Growth of Atomic Layer Deposition of Noble Metals: A Case Study for Platinum

“…Initially, the reaction mechanisms were mainly studied by identifying the reaction products formed during the process. By using mass spectrometry, Aaltonen et al established for Ru and Pt that CO 2 and H 2 O are formed during both ALD half-reactions as the main reactions products, implying that combustion-like reactions play a dominant role (13). By gas-phase infrared spectroscopy, and later also by mass-spectrometry (15,19), it was observed for Pt ALD that CH 4 is also formed during the MeCpPtMe 3 pulse (14), which revealed a concurrent reaction pathway in addition to ligand combustion.…”