Human skin has different types of tactile receptors that can distinguish various mechanical stimuli from temperature. We present a deformable artificial multimodal ionic receptor that can differentiate thermal and mechanical information without signal interference. Two variables are derived from the analysis of the ion relaxation dynamics: the charge relaxation time as a strain-insensitive intrinsic variable to measure absolute temperature and the normalized capacitance as a temperature-insensitive extrinsic variable to measure strain. The artificial receptor with a simple electrode-electrolyte-electrode structure simultaneously detects temperature and strain by measuring the variables at only two measurement frequencies. The human skin–like multimodal receptor array, called multimodal ion-electronic skin (IEM-skin), provides real-time force directions and strain profiles in various tactile motions (shear, pinch, spread, torsion, and so on).

Human skin imperfectly discriminates between pressure and temperature stimuli under mixed stimulation, and exhibits nonlinear sensitivity to each stimulus. Despite great advances in the field of electronic skin (E-skin), the limitations of human skin have not previously been overcome. For the first time, the development of a stimulus-discriminating and linearly sensitive bimodal E-skin that can simultaneously detect and discriminate pressure and temperature stimuli in real time is reported. By introducing a novel device design and using a temperature-independent material, near-perfect stimulus discriminability is realized. In addition, the hierarchical contact behavior of the surface-wrinkled microstructure and the optimally reduced graphene oxide in the E-skin contribute to linear sensitivity to applied pressure/temperature stimuli over wide intensity range. The E-skin exhibits a linear and high pressure sensitivity of 0.7 kPa up to 25 kPa. Its operation is also robust and exhibits fast response to pressure stimulus within 50 ms. In the case of temperature stimulus, the E-skin shows a linear and reproducible temperature coefficient of resistance of 0.83% K in the temperature range 22-70 °C and fast response to temperature change within 100 ms. In addition, two types of stimuli are simultaneously detected and discriminated in real time by only impedance measurements.

Electrically induced resistive switching in metal insulator-metal structures is a subject of increasing scientific interest because it is one of the alternatives that satisfies current requirements for universal non-volatile memories. However, the origin of the switching mechanism is still controversial. Here we report the fabrication of a resistive switching device inside a transmission electron microscope, made from a Pt/SiO 2 /a-Ta 2 O 5 À x /a-TaO 2 À x /Pt structure, which clearly shows reversible bipolar resistive switching behaviour. The currentvoltage measurements simultaneously confirm each of the resistance states (set, reset and breakdown). In situ scanning transmission electron microscope experiments verify, at the atomic scale, that the switching effects occur by the formation and annihilation of conducting channels between a top Pt electrode and a TaO 2 À x base layer, which consist of nanoscale TaO 1 À x filaments. Information on the structure and dimensions of conductive channels observed in situ offers great potential for designing resistive switching devices with the high endurance and large scalability.

Direct printing of thin-film transistors has enormous potential for ubiquitous and lightweight wearable electronic applications. However, advances in printed integrated circuits remain very rare. Here we present a three-dimensional (3D) integration approach to achieve technology scaling in printed transistor density, analogous to Moore’s law driven by lithography, as well as enhancing device performance. To provide a proof of principle for the approach, we demonstrate the scalable 3D integration of dual-gate organic transistors on plastic foil by printing with high yield, uniformity, and year-long stability. In addition, the 3D stacking of three complementary transistors enables us to propose a programmable 3D logic array as a new route to design printed flexible digital circuitry essential for the emerging applications. The 3D monolithic integration strategy demonstrated here is applicable to other emerging printable materials, such as carbon nanotubes, oxide semiconductors and 2D semiconducting materials.

Transparent electrodes have been widely used in electronic devices such as solar cells, displays, and touch screens. Highly flexible transparent electrodes are especially desired for the development of next generation flexible electronic devices. Although indium tin oxide (ITO) is the most commonly used material for the fabrication of transparent electrodes, its brittleness and growing cost limit its utility for flexible electronic devices. Therefore, the need for new transparent conductive materials with superior mechanical properties is clear and urgent. Ag nanowire (AgNW) has been attracting increasing attention because of its effective combination of electrical and optical properties. However, it still suffers from several drawbacks, including large surface roughness, instability against oxidation and moisture, and poor adhesion to substrates. These issues need to be addressed before wide spread use of metallic NW as transparent electrodes can be realized. In this study, we demonstrated the fabrication of a flexible transparent electrode with superior mechanical, electrical and optical properties by embedding a AgNW film into a transparent polymer matrix. This technique can produce electrodes with an ultrasmooth and extremely deformable transparent electrode that have sheet resistance and transmittance comparable to those of an ITO electrode.