Abstract:Atomic Vapor Deposition (AVD) technique was successfully applied for the depositions of amorphous HfO 2 , Sr-Ta-O and Ti-Ta-O thin films, which were investigated as alternative dielectrics to replace the standard SiO 2 or Si 3 N 4 dielectrics used in Metal-Insulator-Insulator (MIM) capacitors. Metal oxides were grown on 200 mm TiN/Si (100) substrates within the thermal budget of back-end-of-line (BEOL) process. Electrical properties, investigated after sputtering Au top electrodes, revealed that the main chara… Show more
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