Alternative deposition methods of copper and silver indium ternary sulphides with spinel structure

Makhova, L.; Konovalov, I.

doi:10.1016/j.tsf.2006.12.076

Cited by 13 publications

(5 citation statements)

References 15 publications

(17 reference statements)

Supporting

Mentioning

Contrasting

Order By: Relevance

“…CuIn 5 S 8 is a cubic spinel with indium found principally on octahedral sites rather than on tetrahedral sites as found in most chalcopyrite structures [10]. However, n-CuInS 2 chalcopyrite is known to be difficult to grow [47]. Therefore, CuIn 5 S 8 spinel phase being typically n-type and having a similar band gap of 1.5 eV, matches well with the solar spectrum for energy conversion [6].…”

Section: Introductionsupporting

confidence: 57%

Experimental investigation of the effect of indium content on the CuIn5S8 electrodes using electrochemical impedance spectroscopy

Gannouni

Assaker

Chtourou

2015

Materials Research Bulletin

View full text Add to dashboard Cite

Section: Introductionsupporting

confidence: 57%

Experimental investigation of the effect of indium content on the CuIn5S8 electrodes using electrochemical impedance spectroscopy

Gannouni

Assaker

Chtourou

2015

Materials Research Bulletin

View full text Add to dashboard Cite

“…1,2 As one of these semiconductors, CuIn 5 S 8 compound 3 has been reported to be favorable for the application in the photovoltaic and photochemical field. 4 In the literature, this ternary material has been investigated in some detail by many authors. 5,6 It has been mentioned that CuIn 5 S 8 crystallizes in the cubic spinel structure (space group O h 7 Fd3m) and can be written by the general formula (Cu +1 In +3 ) t (In 4 +3 ) o S 8 −2 , where the subscripts t and o indicate tetrahedral and octahedral sites, respectively.…”

mentioning

confidence: 99%

“…7 The lattice constant is a = 10.6736 Å. 8 CuIn 5 S 8 is one of two stable phases in the Cu 2 S-In 2 S 3 system 4 and it is n-type semiconductor with direct transition. 9 The bandgap of CuIn 5 S 8 is near 1.5 eV, 10 which is suitable for a terrestrial solar cell absorber layer.…”

mentioning

confidence: 99%

Influence of Electrodeposition Potential on the Properties of CuIn₅S₈Spinel Thin Films

Gannouni

Assaker

Chtourou

2013

J. Electrochem. Soc.

View full text Add to dashboard Cite

Ternary CuIn5S8 spinel thin films were deposited on indium tin oxide (ITO)-coated glass substrates using a one-step electrodeposition method. A new procedure for the deposition of CuIn5S8 samples is reported. Prior to the deposition, a cyclic voltammetric study was performed in unitary (Cu, S, In) systems, binaries (Cu-S, In-S) systems, and ternary Cu-In-S system. The influence of various deposition potentials on structural, morphological, optical and electrical properties of samples was investigated. Based on these studies, X-ray diffraction patterns show that CuIn5S8 cubic spinel phase was the main constituent of the deposited layers at applied potential of −1 V (vs. Ag/AgCl). From (AFM) analysis, it was found that the surface morphology, grain size roughness and thickness were strongly affected by varying the deposition potentials. At −1 V (vs. Ag/AgCl) an optical band-gap of approximately 1.54 eV for this material was determined by optical transmission spectroscopy. At potentials more negative than −0.8 V (vs. Ag/AgCl) the film is converted to n-type and exhibits lower resistivity.

show abstract

“…As these are environment friendly compounds, so these can be used as absorbers 16 . CuIn 5 S 8, 24,25 AgIn 5 S 8, 26‐35 CuIn 5 Se 8 , AgIn 5 Se 8 , CuIn 5 Te 8 and AgIn 5 Te 8 belong to this family, have gained considerable attention. Silver based materials AB 5 C 8 (A = Ag, B=In, C=S, Se or Te) with the high concentration of silver, indicates that these compounds are highly sensitive to light and thermal stress making these compounds useful in the device applications 36 .…”

Section: Introductionmentioning

confidence: 99%

“…Thin films of CuIn 5 S 8 and AgIn 5 S 8 were synthesized by Liudmila et al 40 Leon et al, synthesized CuIn 5 Se 8 films by Bridgman method 48 . Thin films of AgIn 5 S 8 and CuIn 5 S 8 were also synthesized by Makhova et al, 24 using sequential evaporation method. Thin films of CuIn 5 S 8 were prepared by Gannouni et al, 8,15 using thermal evaporation method.…”

Section: Introductionmentioning

confidence: 99%

Structural, electronic and optoelectronic properties of AB ₅ C ₈ ( A = Cu/Ag; B = In and C = S, Se and Te ) compounds

et al. 2020

View full text Add to dashboard Cite

Summary Ternary semiconductors AB5C8 (A = Cu/Ag, B = In and C = S, Se or Te) have been investigated. The CuIn5S8 and AgIn5S8 have been synthesize in cubic spinel structure with space group (Fd3m), whereas CuIn5Se8, AgIn5Se8, CuIn5Te8 and AgIn5Te8 have tetragonal structures with space group P‐42m. The relaxed crystal geometry, electrical properties such as electronic band structure and optoelectronic properties are predicted by using full potential method in this work. For the determination of relaxed crystal geometry, the gradient approximation (PBE‐GGA) is used. All the studied compounds are semiconductors based on their band structures in agreement with the experimental results, and their bulk moduli are in the range 35 to 69 GPa. Wide absorption peaks appeared in the visible to ultraviolet energy region indicating good absorption ability of these compounds. Therefore, these semiconductors are an excellent choice for optical devices, electrochemical and photovoltaic cells. These compounds have remarkable characteristics such as direct as well as indirect band gaps with very slight difference between the two, high absorption coefficient, good photo‐stability, easy inter‐conversion between n‐ and p‐type semiconductors and in manufacturing of comparatively cheap homo and hetero junction structures. AB5C8 (A = Cu/Ag; B = In and C = S, Se, Te) compounds have shown high absorption and optical conductivity in the visible region. These compounds have therefore high potential to be used as solar energy harvesting. Also these systems are optical active in the ultraviolet region too therefore can be used for high frequency optoelectronics applications.

show abstract

Alternative deposition methods of copper and silver indium ternary sulphides with spinel structure

Cited by 13 publications

References 15 publications

Experimental investigation of the effect of indium content on the CuIn5S8 electrodes using electrochemical impedance spectroscopy

Experimental investigation of the effect of indium content on the CuIn5S8 electrodes using electrochemical impedance spectroscopy

Influence of Electrodeposition Potential on the Properties of CuIn₅S₈Spinel Thin Films

Structural, electronic and optoelectronic properties of AB ₅ C ₈ ( A = Cu/Ag; B = In and C = S, Se and Te ) compounds

Contact Info

Product

Resources

About

Alternative deposition methods of copper and silver indium ternary sulphides with spinel structure

Cited by 13 publications

References 15 publications

Experimental investigation of the effect of indium content on the CuIn5S8 electrodes using electrochemical impedance spectroscopy

Experimental investigation of the effect of indium content on the CuIn5S8 electrodes using electrochemical impedance spectroscopy

Influence of Electrodeposition Potential on the Properties of CuIn5S8Spinel Thin Films

Structural, electronic and optoelectronic properties of AB 5 C 8 ( A = Cu/Ag; B = In and C = S, Se and Te ) compounds

Contact Info

Product

Resources

About

Influence of Electrodeposition Potential on the Properties of CuIn₅S₈Spinel Thin Films

Structural, electronic and optoelectronic properties of AB ₅ C ₈ ( A = Cu/Ag; B = In and C = S, Se and Te ) compounds