AlN thin films deposited by pulsed laser ablation, sputtering and filtered arc techniques

Bathe, Ravi; Vispute, R. D.; Habersat, Daniel B.; Sharma, Rakesh; Venkatesan, T.; Scozzie, Charles; Ervin, M. H.; Geil, Bruce; Lelis, A.; Dikshit, S. J.; Bhattacharya, R. S.

doi:10.1016/s0040-6090(01)01321-9

Cited by 23 publications

(12 citation statements)

References 10 publications

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“…The fluences were measured by knife-edge scans in an equivalent focal plane. Previously it has been reported that decomposition of AlN occurs at fluences of 1.5-4.0 J/cm 2 [27,28] whereas others have reported that the threshold for decomposition is higher [11,[13][14][15]. Thus, these ranges of fluence values were selected because they represent a low fluence regime ( < 3 J/cm 2 ) that is clearly below this threshold and a high fluence regime ( > 4 J/cm 2 ) where deposition rates are higher but it is not clear whether single phase AlN can be deposited.…”

Section: Deposition Conditionsmentioning

confidence: 97%

“…For example, some authors have reported that the highest quality films were produced under vacuum [11,[13][14][15], while others have reported that AlN decomposition (incorporation of metallic Al and/or nitrogen deficiency) occurred even at low laser fluence with a low background pressure of N 2 [16][17][18][19][20]. There are also discrepancies regarding the influence of substrate temperature and/or ambient pressure on deposition rate [21][22][23].…”

Section: Introductionmentioning

confidence: 99%

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Correlations between optical properties, microstructure, and processing conditions of Aluminum nitride thin films fabricated by pulsed laser deposition

Baek

Becker

et al. 2007

Thin Solid Films

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Section: Deposition Conditionsmentioning

confidence: 97%

Section: Introductionmentioning

confidence: 99%

Correlations between optical properties, microstructure, and processing conditions of Aluminum nitride thin films fabricated by pulsed laser deposition

Baek

Becker

et al. 2007

Thin Solid Films

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“…60 Figure 18 shows cross-sectional SEM micrographs of the pulsed-laser-deposited AlN samples as a function of background NH 3 pressure. Figure 18a shows the AlN film grown under 1 3 10 ÿ4 torr of NH 3 .…”

Section: Aln As a Passivation Layer On Side Walls Of Sic-based Devicesmentioning

confidence: 99%

Advances in pulsed-laser-deposited AIN thin films for high-temperature capping, device passivation, and piezoelectric-based RF MEMS/NEMS resonator applications

Hullavarad

Vispute

Nagaraj

et al. 2006

J. Electron. Mater.

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In this paper we report recent advances in pulsed-laser-deposited AlN thin films for high-temperature capping of SiC, passivation of SiC-based devices, and fabrication of a piezoelectric MEMS/NEMS resonator on Pt-metallized SiO 2 /Si. The AlN films grown using the reactive laser ablation technique were found to be highly stoichiometric, dense with an optical band gap of 6.2 eV, and with a surface smoothness of less than 1 nm. A low-temperature buffer-layer approach was used to reduce the lattice and thermal mismatch strains. The dependence of the quality of AlN thin films and its characteristics as a function of processing parameters are discussed. Due to high crystallinity, near-perfect stoichiometry, and high packing density, pulsed-laser-deposited AlN thin films show a tendency to withstand high temperatures up to 1600°C, and which enables it to be used as an anneal capping layer for SiC wafers for removing ion-implantation damage and dopant activation. The laser-deposited AlN thin films show conformal coverage on SiC-based devices and exhibit an electrical break-down strength of 1.66 MV/cm up to 350°C when used as an insulator in Ni/AlN/SiC metal-insulator-semiconductor (MIS) devices. Pulsed laser deposition (PLD) AlN films grown on Pt/ SiO 2 /Si (100) substrates for radio-frequency microelectrical and mechanical systems and nanoelectrical and mechanical systems (MEMS and NEMS) demonstrated resonators having high Q values ranging from 8,000 to 17,000 in the frequency range of 2.5-0.45 MHz. AlN thin films were characterized by x-ray diffraction, Rutherford backscattering spectrometry (in normal and oxygen resonance mode), atomic force microscopy, ultraviolet (UV)-visible spectroscopy, and scanning electron microscopy. Applications exploiting characteristics of high bandgap, high bond strength, excellent piezoelectric characteristics, extremely high chemical inertness, high electrical resistivity, high breakdown strength, and high thermal stability of the pulsed-laser-deposited thin films have been discussed in the context of emerging developments of SiC power devices, for high-temperature electronics, and for radio frequency (RF) MEMS.

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“…However, high growth temperature is required for CVD while it is difficult for PLD to develop large area films. In this regard, under specific circumstances where low temperature deposited layers and conformal coatings at relatively low cost are needed, sputtering is the best choice [19].…”

Section: Introductionmentioning

confidence: 99%

Structure, mechanical and corrosion properties of DC reactive magnetron sputtered aluminum nitride (AlN) hard coatings on mild steel substrates

2008

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Aluminum nitride (AlN) coatings of about 2 lm thick were deposited on mild steel (MS) by means of direct current (DC) reactive magnetron sputtering. AlN coatings were prepared in an Ar + N 2 gas mixture and their crystal structure, microstructure, and topography were analyzed by X-ray diffractometry (XRD), scanning electron microscopy (SEM) and atomic force microscopy (AFM), respectively. XRD revealed that the films are polycrystalline in nature and have a hexagonal wurtzite structure with a predominant peak observed along the (002) plane. SEM and AFM images showed the presence of continuously covered pebble like spherical grains on the surface. These coatings showed lower coefficient of friction and excellent wear resistance compared to the bare MS substrate. The potentiodynamic polarization studies showed lower corrosion current density and higher polarization resistance for the AlN/MS structure than the uncoated MS substrate.

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AlN thin films deposited by pulsed laser ablation, sputtering and filtered arc techniques

Cited by 23 publications

References 10 publications

Correlations between optical properties, microstructure, and processing conditions of Aluminum nitride thin films fabricated by pulsed laser deposition

Correlations between optical properties, microstructure, and processing conditions of Aluminum nitride thin films fabricated by pulsed laser deposition

Advances in pulsed-laser-deposited AIN thin films for high-temperature capping, device passivation, and piezoelectric-based RF MEMS/NEMS resonator applications

Structure, mechanical and corrosion properties of DC reactive magnetron sputtered aluminum nitride (AlN) hard coatings on mild steel substrates

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