All-sputtered, flexible, bottom-gate IGZO/Al₂O₃ bi-layer thin film transistors on PEN fabricated by a fully room temperature process

Abstract

In this work, an innovative all-sputtered bottom-gate thin film transistor (TFT) using an amorphous InGaZnO (IGZO)/Al2O3 bi-layer channel was fabricated by fully room temperature processes on a flexible PEN substrate.

High-Performance Thin Film Transistor with an Neodymium-Doped Indium Zinc Oxide/Al2O3 Nanolaminate Structure Processed at Room Temperature

“…As the most widely-studied MOS material in TFTs, indium gallium zinc oxide (IGZO), the saturation mobility of which is usually 10~20 cm 2 ·V −1 ·s −1 [ 3 , 4 ], is limited by its natural structure, especially when the processing temperature is strictly controlled for some device applications on flexible plastic substrates or nanopapers. As reported by our previous works [ 5 , 6 ], we have successfully promoted the mobility of a-IGZO TFTs to 25 cm 2 ·V −1 ·s −1 under room temperature conditions by using an a-IGZO/Al 2 O 3 nanolaminate structure. However, it is difficult to have a higher breakthrough on device performance for the a-IGZO TFT, which is still not sufficient for the high-resolution or high-framerate displays requiring mobility of over 30 cm 2 ·V −1 ·s −1 [ 7 ].…”

Light response behaviors of amorphous In–Ga–Zn–O thin-film transistors via in situ interfacial hydrogen doping modulation

“…These properties are among the highest values for exible phototransistors as compared with previous reports. 18,[25][26][27] Under the same light illumination, the phototransistors exhibit almost the same transfer curves in both at and bent congurations. Fig.…”

Effect of deep UV laser treatment on silicon‐doped Tin oxide thin film

“…The intrinsic oxygen (V M‐O ) is shown at the low binding energy peak (530.69‐531.42eV). The medium binding energy peaks (531.83‐532.65eV) represent oxygen vacancies (V O ), and the high binding energy peaks (532.40‐533.15eV) represent chemically adsorbed oxygen (V M‐OR ) . The V O area proportion (V O /(V O +V M‐O )) represents the relative quantity of oxygen vacancy .…”

“…The medium binding energy peaks (531.83-532.65eV) represent oxygen vacancies (V O ), and the high binding energy peaks (532.40-533.15eV) represent chemically adsorbed oxygen (V M-OR ). [21][22][23] The V O area proportion (V O /(V O +V M-O )) represents the relative quantity of oxygen vacancy. 24 As shown in Figure 6, the oxygen vacancy of a-STO is significantly increased after UV laser treatment.…”