All-optical fiber modulator with a graphene interlayer

Ruan, Zuliang; Pei, Li; Ning, Tigang; Wang, Jianshuai; Jiao, Z.; Li, Jing; Xie, Yiyang; Zhao, Qi; Wang, Ji

doi:10.1016/j.optcom.2020.125817

Cited by 12 publications

(6 citation statements)

References 26 publications

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“…35,38−41 So far, graphene has been successfully used for all-optical modulation (generating Q-switched 42 /mode-locked pulses, 43 all-optical switch, etc). 44,45 All-optical modulation in free-space based on graphene has also been extensively studied, 13,46 in which graphene nanosheet dispersion is commonly used. However, the modulation mechanism in graphene nanosheet dispersion is still not fully understood.…”

Section: Introductionmentioning

confidence: 99%

“…Graphene, the best known 2D material, has a unique linear energy-momentum dispersion relation , that allows photons of any wavelength to be absorbed in principle . Therefore, graphene is possible to achieve modulation of ultra-wide bandwidth and has an excellent nonlinear optical response in the ultra-wide spectral region from the UV to the far IR. ,− So far, graphene has been successfully used for all-optical modulation (generating Q-switched/mode-locked pulses, all-optical switch, etc). , All-optical modulation in free-space based on graphene has also been extensively studied, , in which graphene nanosheet dispersion is commonly used. However, the modulation mechanism in graphene nanosheet dispersion is still not fully understood.…”

Section: Introductionmentioning

confidence: 99%

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Mechanism of All-Optical Spatial Light Modulation in Graphene Dispersion

et al. 2021

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Graphene is a superb material with significant potential in broadband all-optical modulation. However, the mechanism of the all-optical modulation in graphene dispersion is still under debate. Here, we report on a pump power-dependent spatial light modulation by using the 780 nm CW laser as the pump and signal beams via graphene dispersion. The results indicate that graphene is able to convert the Gaussian signal beam into a hollow beam with a ring pattern. Examining the temporal evolution of the ring pattern, we found that spatial cross-phase modulation (SXPM) plays the dominant role at low pump power, while nonlinear scattering (NLS) becomes dominant when the pump power is high. Furthermore, the dependence of the size and intensity of the signal ring pattern on the pump power is investigated. The results can be well explained by SXPM, NLS, and saturation absorption (SA) effects. Finally, an all-optical switch is developed based on the dependence of the signal intensity on the pump power. It is demonstrated that both in-phase and out-phase modulation can be realized in one system. This work not only provides useful information in understanding the mechanism of graphene in interacting with the light, but also suggests a new way to produce hollow beam with tunable size and achieve an all-optical switch with both in-phase and out-phase modulation.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Mechanism of All-Optical Spatial Light Modulation in Graphene Dispersion

et al. 2021

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“…4 More specifically, graphene photodetectors gained extraordinary attention for their ultrafast speed and broadband absorption, despite the innate, relatively low optical absorption of graphene. 11,12 Several techniques were proposed to boost the responsivity of high-speed graphene photodetectors including waveguide-integrated configurations where light continuously interacts with the graphene sheet as it propagates through the waveguide, combining graphene with other 2D materials in composite heterostructures, and enhancing graphene's absorption by plasmonic means. So far, the demonstrated waveguide-integrated plasmonic graphene photodetectors are all based on gold, [13][14][15][16] which in spite of its outstanding plasmonic performance, is not CMOS-compatible.…”

Section: Introductionmentioning

confidence: 99%

“…(11) Xia, F.; Mueller, T.; ming Lin, Y.; Valdes-Garcia, A.; Avouris, P. Ultrafast graphene photodetector. Nature Nanotechnology 2009, 4, 839-843.…”

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confidence: 99%

Plasmon-enhanced graphene photodetector with CMOS-compatible titanium nitride

AlAloul,

Rasras

2020

Preprint

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Graphene has emerged as an ultrafast optoelectronic material for on-chip photodetector applications. The 2D nature of graphene enables its facile integration with complementary metal-oxide semiconductor (CMOS) microelectronics and silicon photonics, yet graphene absorbs only ∼2.3% of light. Plasmonic metals can enhance the responsivity of graphene photodetectors, but may result in CMOS-incompatible devices, depending on the choice of metal. Here, we propose a plasmon-enhanced photothermoelectric graphene photodetector using CMOS-compatible titanium nitride (TiN) on the silicon-on-insulator (SOI) platform. The device performance is compared for two substrate materials: SiO 2 and hexagonal boron nitride (hBN). We find out that the thermoelectric performance of graphene is enhanced by hBN, but this enhancement comes at the expense of a slower device speed. Moreover, our study reveals that the bandwidth of the graphene-on-SiO 2 photodetector has a ∼150 GHz theoretical limit, and ∼ 65 GHz for the graphene-on-hBN photodetector. The device presented in this study has a high-speed response with a responsivity as high as 4.4 A/W for an ultracompact length of 3.5 µm, and exhibits a nearly flat photoresponse across the telecom C-band. Furthermore, the presented device operates at zero-bias, consumes zero energy, and has an ultra-low intrinsic noise equivalent power (NEP < 25 pW/ √ Hz).

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“…粒 [20−23] 、超材料 [24,25] 和石墨烯(Graphene) [26,27] 等材料的太赫兹调制器. 其中, 石墨烯因其超宽光谱响应范围(UV-THz)、超高载流子迁移率(在室温下约为15000 cm 2 /(V•s))和高导电性而受到广泛关注.…”

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Highly sensitive broadband terahertz modulator based on MAPbI3/Graphene/Si composite structure

Lai¹,

Wu²,

Li³

et al. 2023

Acta Phys. Sin.

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A high-performance silicon-based terahertz modulator is one of the key devices for building an ultrawideband terahertz-fiber hybrid communication system. In this paper, an ultrawideband terahertz modulator with large modulation depth based on a chalcogenide/graphene/silicon (MAPbI3/Graphene/Si) composite structure driven by near-infrared light (NIR) is proposed. The experimental results show that the graphene film and the chalcogenide hole transport layer can effectively promote the interfacial charge separation, increase the carrier complex lifetime, significantly enhance the surface conductivity of the device, further modulate the terahertz wave transmission amplitude, and realize the function of the light-controlled terahertz wave modulator under the NIR light drive. The terahertz transmission characteristics of the device are characterized by an 808 nm NIR modulation excitation source, and a large modulation depth of up to 88.3% is achieved in an ultra-wide frequency range of 0.2-2.5 THz and a low power density of 6.1 mW/mm2 driven by NIR light, which is much higher than that of the bare silicon substrate (~14.0%), with significant advantages of high sensitivity, broadband and large modulation depth. The corresponding semi-analytical device model is established and the experimental results are verified by simulation. The proposed MAPbI3/Graphene composite film is effective in enhancing the silicon-based modulator performance and provides a new strategy for the future integration of silicon-based terahertz modulators in NIR terahertz-fiber hybrid communication systems.

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All-optical fiber modulator with a graphene interlayer

Cited by 12 publications

References 26 publications

Mechanism of All-Optical Spatial Light Modulation in Graphene Dispersion

Mechanism of All-Optical Spatial Light Modulation in Graphene Dispersion

Plasmon-enhanced graphene photodetector with CMOS-compatible titanium nitride

Highly sensitive broadband terahertz modulator based on MAPbI<sub>3</sub>/Graphene/Si composite structure

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