All MBE grown InAs/GaAs quantum dot lasers on on-axis Si (001)

Kwoen, Jinkwan; Jang, Byung Koog; Lee, Joohang; Kageyama, Takeo; Watanabe, Katsuyuki; Arakawa, Yasuhiko

doi:10.1364/oe.26.011568

Cited by 111 publications

(57 citation statements)

References 31 publications

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“…III-V semiconductor quantum dots (InAs, InGaAs, InP, etc.) formed in self-organized growth mode are typical nanomaterials, widely used in optoelectronic fields like laser, photodetector, LED, and solar cell [5][6][7][8][9]. Lately, InGaAs (InP) surface quantum dots (SQDs) have also attracted much attention in the application field of gas sensing materials [10][11][12].…”

Section: Introductionmentioning

confidence: 99%

Gas Sensitivity of In0.3Ga0.7As Surface QDs Coupled to Multilayer Buried QDs

et al. 2020

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A detailed analysis of the electrical response of In0.3Ga0.7As surface quantum dots (SQDs) coupled to 5-layer buried quantum dots (BQDs) is carried out as a function of ethanol and acetone concentration while temperature-dependent photoluminescence (PL) spectra are also analyzed. The coupling structure is grown by solid source molecular beam epitaxy. Carrier transport from BQDs to SQDs is confirmed by the temperature-dependent PL spectra. The importance of the surface states for the sensing application is once more highlighted. The results show that not only the exposure to the target gas but also the illumination affect the electrical response of the coupling sample strongly. In the ethanol atmosphere and under the illumination, the sheet resistance of the coupling structure decays by 50% while it remains nearly constant for the reference structure with only the 5-layer BQDs but not the SQDs. The strong dependence of the electrical response on the gas concentration makes SQDs very suitable for the development of integrated micrometer-sized gas sensor devices.

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Section: Introductionmentioning

confidence: 99%

Gas Sensitivity of In0.3Ga0.7As Surface QDs Coupled to Multilayer Buried QDs

et al. 2020

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“…About 1200–1300 nm‐band InAs/GaAs QD lasers themselves have already been commercially available, and especially such lasers which were hybridly integrated on silicon photonics have also been launched for commercialization as high‐performance light sources in the so‐called input/output core chips connecting large‐scale integration chips and central processing unit boards . Moreover, to accelerate the convergence of 1200–1300 nm‐band InAs/GaAs QD lasers with silicon photonics, InAs/GaAs QD lasers were fabricated on silicon substrates by means of wafer bonding or even direct crystral growth to demonstrate almost the same performances as those for conventional QDs on GaAs substrates. These technological trends in silicon photonics mostly treat the QD laser as just light sources or optical amplifying elements, and other optical components necessary for light sources such as gratings for Bragg reflection, phase adjustors, modulators, and monitors are assumed to be equipped on silicon platform waveguides.…”

Section: Introductionmentioning

confidence: 99%

The 1200 nm‐Band InAs/GaAs Quantum Dot Intermixing by Dry Etching and Ion Implantation

Hiraishi

Shirai

Kwoen

et al. 2020

Physica Status Solidi (a)

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In this article, the quantum dot intermixing (QDI) technique previously developed for 1550 nm‐band InAs/InAlGaAs QD is applied to 1200 nm‐band InAs/GaAs QD. Three methods of defect introduction for triggering the QDI are used such as inductively coupled plasma reactive ion etching (ICP‐RIE) (Ar+) and ion implantation (Ar+ and B+). As a result, about 80 nm photoluminescence (PL) peak wavelength shift is obtained for ICP‐RIE when annealing is performed at 575 °C, after etching down to 450 nm to the QD layer. On the contrary, about 110 nm PL peak wavelength shift is obtained for B+ ion implantation at an acceleration energy of 120 keV and a dose of 1.0 × 1014 cm−2 and subsequent annealing. Cross‐sectional image analyses by scanning transmission electron microscope (STEM) and energy‐dispersive X‐ray spectroscopy (EDX) clarified the modification of InAs QD structures by the QDI process.

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“…The findings of the above studies indicate that these parameters have significant impact on the growth behaviors, such as surface morphology and crystal quality. Although MBE systems have been increasingly applied in the heterogeneous epitaxy, especially for III-V semiconductors [27][28][29], the influence of the growth temperature of InP nucleation layer on the growth of InP on Si has not been studied and understood sufficiently.…”

Section: Introductionmentioning

confidence: 99%

Influence of Growth Temperature of the Nucleation Layer on the Growth of InP on Si (001)

Yang

et al. 2019

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InP layers grown on Si (001) were achieved by the two-step growth method using gas source molecular beam epitaxy. The effects of growth temperature of nucleation layer on InP/Si epitaxial growth were investigated systematically. Cross-section morphology, surface morphology and crystal quality were characterized by scanning electron microscope images, atomic force microscopy images, high-resolution X-ray diffraction (XRD), rocking curves and reciprocal space maps. The InP/Si interface and surface became smoother and the XRD peak intensity was stronger with the nucleation layer grown at 350 °C. The Results show that the growth temperature of InP nucleation layer can significantly affect the growth process of InP film, and the optimal temperature of InP nucleation layer is required to realize a high-quality wafer-level InP layers on Si (001).

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All MBE grown InAs/GaAs quantum dot lasers on on-axis Si (001)

Cited by 111 publications

References 31 publications

Gas Sensitivity of In0.3Ga0.7As Surface QDs Coupled to Multilayer Buried QDs

Gas Sensitivity of In0.3Ga0.7As Surface QDs Coupled to Multilayer Buried QDs

The 1200 nm‐Band InAs/GaAs Quantum Dot Intermixing by Dry Etching and Ion Implantation

Influence of Growth Temperature of the Nucleation Layer on the Growth of InP on Si (001)

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