Influence of Growth Temperature of the Nucleation Layer on the Growth of InP on Si (001)

Abstract

InP layers grown on Si (001) were achieved by the two-step growth method using gas source molecular beam epitaxy. The effects of growth temperature of nucleation layer on InP/Si epitaxial growth were investigated systematically. Cross-section morphology, surface morphology and crystal quality were characterized by scanning electron microscope images, atomic force microscopy images, high-resolution X-ray diffraction (XRD), rocking curves and reciprocal space maps. The InP/Si interface and surface became smoother and the XRD peak intensity was stronger with the nucleation layer grown at 350 °C. The Results show that the growth temperature of InP nucleation layer can significantly affect the growth process of InP film, and the optimal temperature of InP nucleation layer is required to realize a high-quality wafer-level InP layers on Si (001).

Effect of Thickness of InP Nucleation Layer on the Two-Step Growth of InP on Si(001)

“…In our previous works, the two-step technique had been demonstrated to be effective for the InP/Si growth, and we had experimentally studied the optimum growth temperature of the InP nucleation layer of the epitaxial layer [29], but without further studying on the influence of the thickness of the InP nucleation layer. Therefore, efforts should be made to further investigate the growth parameters of the InP nucleation layer and the mechanism of Si-based InP to realize the high-performance heteroepitaxy integrated circuit of InP HBT and Si CMOS.…”