All-Electric Laser Beam Control Based on a Quantum-Confined Heterostructure with an Integrated Distributed Bragg Grating

Shashkin, I. S.; Soboleva, O. S.; Gavrina, P. S.; Zolotarev, V. V.; Сліпченко, С. О.; Pikhtin, N. A.

doi:10.1134/s1063782618120217

Cited by 3 publications

(5 citation statements)

References 10 publications

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“…This shoulder is the stronger, the thinner the barrier (and, accordingly, the larger the overlapp integral of the wave functions of the interwell electron and hole). This feature affects very slightly the modulation spectra of the refractive index, but has a critical effect on the choice of the working spectral point of the modulator, because high optical loss (50-100 cm −1 ) will give no way of creating a modulator with necessary length and efficiency [11].…”

Section: Design Of Cqwmentioning

confidence: 99%

“…In [11], we for the first time considered the design of modulator-chip providing an effective angular scanning of laser beam due to the integration of a surface diffraction grating and waveguide with tunnel-coupled quantum-wells (CQWs) in which the refractive index is varied due to the quantum-confined Stark effect. It was shown that the most effective use of the electro-optical properties of A3B5 semiconductor materials can be obtained in quantum-confined structures, which makes it possible to obtain a large modulation of the material refractive index and, what is no less important, to provide a spectral separation between the working range in which properties of semiconductor materials are modulated and the absorption range.…”

Section: Introductionmentioning

confidence: 99%

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Enhancement of the refractive index modulation in a modulator based on GaAs/AlGaAs quantum wells

Zolotarev¹,

Shashkin²,

Golovin³

et al. 2019

Semicond. Sci. Technol.

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Approaches of optimization of coupled quantum wells with pronounced quantum-confined Stark effect in order to reach a high refractive index change are described. A numerical simulation was used to determine the optimal design parameters (quantum well width, barrier thickness and composition) based on GaAs/AlGaAs materials with two symmetric quantum wells, which provides the maximum modulation of the refractive index at a small absorption coefficient. It is demonstrated that, with the electric field strength varied within the range 0-20 kV cm −1 at an optical loss for interband absorption not exceeding 10 cm −1 , the refractive index can be changed by up to 0.0362.

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Section: Design Of Cqwmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Enhancement of the refractive index modulation in a modulator based on GaAs/AlGaAs quantum wells

Zolotarev¹,

Shashkin²,

Golovin³

et al. 2019

Semicond. Sci. Technol.

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“…Shifting the working wavelength to the shortwave region may be inadvisable, since a more efficient structure design with an increased Γ QW will include a stronger waveguide and an increased number of quantum well periods. In particular to solve the problem of creating a modulator-chip based on a waveguide phase modulator structure [8,24] for spatial control of a laser beam, an increase in the Γ QW , for example, by an order of magnitude will increase the modulation depth of the refractive index to 1.48×10 -3 , which is higher than previously published results for GaAs based heterostructures [2], provided that the residual optical losses remain at an acceptable low level.…”

Section: Resultsmentioning

confidence: 86%

“…Then using the Kramers-Kronig relation between changes in the modal internal optical loss and changes in the modal refractive index one can calculate the spectra of the latter for the structures under study [8,21,24]:…”

Section: Methodsmentioning

confidence: 99%

“…Widely used amplitude and phase modulators of a laser beam can quickly change the refractive index using small external control signals [1][2][3][4]. Recently, approaches to control the spatial laser beam scanning for phased laser arrays has been actively developed [5][6][7][8]. In the general case, the change in the real part of the refractive index of a semiconductor material is associated with a change in optical absorption by the Kramers-Kronig relation and be induced by a variety of mechanisms [9].…”

Section: Introductionmentioning

confidence: 99%

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Studies on the refractive index modulation in tunnel-coupled quantum-confined active regions of AlGaAs/GaAs semiconductor heterostructures by the p–n junction electric field

Zolotarev

Shashkin

Golovin

et al. 2019

Semicond. Sci. Technol.

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Experimental studies of the influence of the parameters of the quantum-confined active regions of GaAs (QW)/ Al 0.35 Ga 0.65 As (barrier) semiconductor heterostructures, fabricated by the MOCVD technique, on the modulation of the refractive index and the optical absorption by the field of the reverse-biased p-n junction were carried out. It is shown that the use of thin quantum-confined active regions is mission-critical for obtaining a large modulation of the refractive index in the spectral region with low optical losses. It is shown that the use of structures with two thin tunnel-coupled GaAs quantum wells 3-nm-thick each compared to a single GaAs quantum well, can significantly increase the modulation amplitude of the refractive index and reduce internal optical losses at the operating wavelength. It is experimentally demonstrated that a higher value of the refractive index modulation amplitude in samples based on double-well system is provided by unipolar modulation of the absorption spectrum due to the effect of the transition from the 'coupled quantum wells' state at moderate electric fields to the 'uncoupled quantum wells' state at strong electric fields. It is demonstrated that there is an increase of the refractive index modulation with an increase in coupling of quantum wells for electrons by reducing the barrier thickness from 6.5 to 4 nm. For a double-well system with 3-nm-thick GaAs QW and 4-nm-thick Al 0.35 Ga 0.65 As barrier, a value of 0.000 148 for the modal refractive index change is achieved at internal optical loss α1 cm -1 , originated from residual absorption in the quantum-confined active region, and it provides a material refractive index modulation of 0.0181.

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Modulator chip based on semiconductor heterostructures with a surface diffraction grating for laser beam steering

et al. 2021

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Design parameter optimization of a chip based on a heterostructure with a surface diffraction grating for laser beam angle modulation was carried out. It was found that the widest field of view is achieved at outcoupling angles close to the total internal reflection. The highest energy efficiency is provided by using epitaxy Bragg reflector on the substrate side. It is shown that using a multiple quantum well that gives electro-optic refractive index modulation by 0.007 and second-order surface diffraction grating with a period of 317 nm provides laser beam steering in a range of 5°, with resolution of 130 points at a wavelength of 782 nm.

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All-Electric Laser Beam Control Based on a Quantum-Confined Heterostructure with an Integrated Distributed Bragg Grating

Cited by 3 publications

References 10 publications

Enhancement of the refractive index modulation in a modulator based on GaAs/AlGaAs quantum wells

Enhancement of the refractive index modulation in a modulator based on GaAs/AlGaAs quantum wells

Studies on the refractive index modulation in tunnel-coupled quantum-confined active regions of AlGaAs/GaAs semiconductor heterostructures by the p–n junction electric field

Modulator chip based on semiconductor heterostructures with a surface diffraction grating for laser beam steering

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