2007 IEEE International Symposium on Circuits and Systems (ISCAS) 2007
DOI: 10.1109/iscas.2007.377836
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All-CMOS High-Speed CML Gates with Active Shunt-Peaking

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Cited by 7 publications
(3 citation statements)
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“…The clock buffers of the last stage need to deliver 4-GHz clock signal effectively and thus an active shunt-peaking technique is used in the CML buffer design [8] as shown in figure 9(b). By selecting the low bias voltage Vb1, the p-MOSFETs M4 and M5 are in deep triode mode.…”
Section: The Design Of Locs2mentioning
confidence: 99%
“…The clock buffers of the last stage need to deliver 4-GHz clock signal effectively and thus an active shunt-peaking technique is used in the CML buffer design [8] as shown in figure 9(b). By selecting the low bias voltage Vb1, the p-MOSFETs M4 and M5 are in deep triode mode.…”
Section: The Design Of Locs2mentioning
confidence: 99%
“…Even with multi-stage structure, we still have to use a bandwidth extension technique. We choose the shunt peaking technique [13][14]. Since we cannot afford a pair of embedded spiral inductors (250 μm  250 μm in the process we use) for each stage, we choose the active shunt peaking technique.…”
Section: Div2mentioning
confidence: 99%
“…The driver has seven stages, providing enough gain as well as large bandwidth. Active shunt-peaking uses smaller active inductors instead of the on-chip passive inductors [9]. A resistor and a NMOS transistor where the resistor is in series with the gate of the transistor can function as an active inductor.…”
Section: Introductionmentioning
confidence: 99%