All‐Around SiN Stressor for High and Homogeneous Tensile Strain in Germanium Microdisk Cavities

Ghrib, A.; Kurdi, M. El; Prost, Mathias; Sauvage, S.; Checoury, X.; Beaudoin, G.; Chaigneau, M.; Ossikovski, Razvigor; Sagnes, I.; Boucaud, P.

doi:10.1002/adom.201400369

Cited by 81 publications

(94 citation statements)

References 27 publications

(33 reference statements)

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“…As discussed previously, with carrier diffusion throughout the structure, the larger total shift of the spectra, compared to the broadening seen with the 300 nm pillars could be a hallmark of more uniform strain. Strained emission from these samples is more highly red shifted than previous reports using silicon nitride stressor layers [14][15][16][17].…”

Section: Optical Characterisationcontrasting

confidence: 45%

“…Optical emission from strained Ge has been demonstrated in a number of ways, for example, with mechanically strained membranes [11], micro-machined structures [12], micro bridge structures [13], and silicon nitride stressor layers applied to Ge microdisks [14,15] and Ge waveguides [16,17]. The use of silicon nitride as a stressor layer is especially interesting, as it is already used in CMOS processes for strained Si channels, and therefore it is of interest to investigate the limits of this approach.…”

Section: Introductionmentioning

confidence: 99%

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Extending the emission wavelength of Ge nanopillars to 225 μm using silicon nitride stressors

Millar¹,

Gallacher²,

Samarelli³

et al. 2015

Opt. Express

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Abstract:The room temperature photoluminescence from Ge nanopillars has been extended from 1.6 μm to above 2.25 μm wavelength through the application of tensile stress from silicon nitride stressors deposited by inductively-coupled-plasma plasma-enhanced chemical-vapour-deposition. Photoluminescence measurements demonstrate biaxial equivalent tensile strains of up to ∼ 1.35% in square topped nanopillars with side lengths of 200 nm. Biaxial equivalent strains of 0.9% are observed in 300 nm square top pillars, confirmed by confocal Raman spectroscopy. Finite element modelling demonstrates that an all-around stressor layer is preferable to a top only stressor, as it increases the hydrostatic component of the strain, leading to an increased shift in the band-edge and improved uniformity over top-surface only stressors layers. Bridging the gap between theory and experiment," J. Appl. Phys. 79, 7148-7156 (1996).

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Section: Optical Characterisationcontrasting

confidence: 45%

Section: Introductionmentioning

confidence: 99%

Extending the emission wavelength of Ge nanopillars to 225 μm using silicon nitride stressors

Millar¹,

Gallacher²,

Samarelli³

et al. 2015

Opt. Express

View full text Add to dashboard Cite

show abstract

“…21,22 Recently, GeSn microdisk resonators were presented 23 showing whispering-gallery-mode (WGM) resonances. The investigated layer stack consisted of Ge/Ge0.92Sn0.08/Ge quantum wells pseudomorphically grown on a sacrificial Ge layer.…”

Section: Introductionmentioning

confidence: 99%

Optically Pumped GeSn Microdisk Lasers on Si

et al. 2016

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The strong correlation between advancing the performance of Si microelectronics and their demand of low power consumption requires new ways of data communication. Photonic circuits on Si are already highly developed except for an eligible on-chip laser source integrated monolithically. The recent demonstration of an optically pumped waveguide laser made from the Si-congruent GeSn alloy, monolithical laser integration has taken a big step forward on the way to an all-inclusive nanophotonic platform in CMOS. We present group IV microdisk lasers with significant improvements in lasing temperature and lasing threshold compared to the previously reported nonundercut Fabry−Perot type lasers. Lasing is observed up to 130 K with optical excitation density threshold of 220 kW/cm 2 at 50 K. Additionally the influence of strain relaxation on the band structure of undercut resonators is discussed and allows the proof of laser emission for a just direct Ge 0.915 Sn 0.085 alloy where Γ and L valleys have the same energies. Moreover, the observed cavity modes are identified and modeled.

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“…Subsequently, high levels of strain have been demonstrated in micro bridge structures [11], and free standing membranes. Silicon nitride stressors have also been used to demonstrate high levels of strain in waveguides [12], pillar structures [13], and Ge micro-disks [14,15].…”

Section: Introductionmentioning

confidence: 99%

Analysis of Ge micro-cavities with in-plane tensile strains above 2 %

Millar¹,

Gallacher²,

Frigerio³

et al. 2016

Opt. Express

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Ge on Si micro-disk, ring and racetrack cavities are fabricated and strained using silicon nitride stressor layers. Photoluminescence measurements demonstrate emission at wavelengths ≥ 2.3 μm, and the highest strained samples demonstrate in-plane, tensile strains of > 2 %, as measured by Raman spectroscopy. Strain analysis of the micro-disk structures demonstrate that shear strains are present in circular cavities, which can detrimentally effect the carrier concentration for direct band transitions. The advantages and disadvantages of each type of proposed cavity structure are discussed.

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All‐Around SiN Stressor for High and Homogeneous Tensile Strain in Germanium Microdisk Cavities

Cited by 81 publications

References 27 publications

Extending the emission wavelength of Ge nanopillars to 225 μm using silicon nitride stressors

Extending the emission wavelength of Ge nanopillars to 225 μm using silicon nitride stressors

Optically Pumped GeSn Microdisk Lasers on Si

Analysis of Ge micro-cavities with in-plane tensile strains above 2 %

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