Alkoxy-derived ferroelectric PZT films: The effect of lead acetate dehydration techniques and lead content in the electrochemically prepared solutions on the properties of the films

Electrical response of Pt/Ru/PbZr0.52Ti0.48O3/Pt capacitor as function of lead precursor excess

“…As shown by the XRD analysis, Pb excess also impacts the crystallographic orientation of the films. 18,19 An increase in the PZT grain size of the favors the (111) orientation as observed on PZT 20 and PZT30, whereas for PZT10 with small grain size the crystallographic orientation is predominantly (100).…”

“…21)] than PZT but the same valence state. One hypothesis is that the residual PbO, present at a concentration below the XPS sensitivity increases the number of mobile charge carriers 18 and creates conducting paths following a percolation model, 22,23 leading to earlier breakdown. On the other hand, the Zr oxide layer at the interface with the electrode may increase E BD since the 5.8 eV band gap of ZrO 2 (Ref.…”

Activation energies for crystallization of manganese‐doped (K,Na)NbO3 thin films deposited from a chemical solution

“…After mixing the solutions separately for 10 min, the acetate solution complex was vacuum-stripped to powder, removing the water. 28 The niobium complex in 2-MOE was mixed simultaneously in a dry box in an Erlenmeyer flask at room temperature for approximately 30 min before adding it to the alkali powders. The powders dissolved quickly upon addition of the niobium solution, and were refluxed in a rotary evaporator under 2 SCFH (standard cubic feet per hour) flow of argon at 106°C for 4 h. The resulting solution was amber colored; it was stored for at least one week in a refrigerator before spin-coating.…”

“…Pyrolysis was immediately followed by a rapid thermal anneal at 500, 525, or 550°C at a ramp rate of approximately 90°C/s for annealing times between 5 and 100 s. All samples were deposited within 105 min to minimize potential solution aging effects. 21,28 Deposited layers were approximately 40 nm thick (see Figure 1).…”

Влияние Кристаллической Структуры На Электрические Свойства Тонкопленочных PZT Структур

“…Обычно при формировании пленок на поверхности Pt (111) или оксидов с близкими значениями постоянной решетки зародышеобразование на поверхности доминирует и обеспечивает характер-ную столбчатую структуру перовскитных (Pe) зерен с ориентацией в направлении (111) [2,9]. Для усиления текстуры Pe (100) обычно используют ориентирующие слои, обогащенные Pb или Ti, тaк как их оксидные фазы имеют близкие к Pe (100) параметры кристаллической решетки [9,[11][12][13][14][15][16][17].…”