2013
DOI: 10.1039/c3ce40508g
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Alkali ratio control for lead-free piezoelectric thin films utilizing elemental diffusivities in RF plasma

Abstract: High performance piezoelectric thin films are generally lead-based, and find applications in sensing, actuation, and transduction in realms of biology, nanometrology, acoustics, and energy harvesting. Potassium sodium niobate (KNN) is considered to be the most promising lead-free alternative, but is hindered by the inability to control and attain perfect stoichiometry materials in thin film form while using practical large area deposition techniques. In this work, we identify the contribution of elemental diff… Show more

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Cited by 27 publications
(11 citation statements)
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“…The difference in the full width at half-maximum (fwhm) of Co 2p can be associated with some differences in Co environments. The Na 1s peak appears at 1073 eV, consistent with the reported Na 1s spectra …”
Section: Resultssupporting
confidence: 90%
See 1 more Smart Citation
“…The difference in the full width at half-maximum (fwhm) of Co 2p can be associated with some differences in Co environments. The Na 1s peak appears at 1073 eV, consistent with the reported Na 1s spectra …”
Section: Resultssupporting
confidence: 90%
“…The Na 1s peak appears at 1073 eV, consistent with the reported Na 1s spectra. 54 First Charge. Figure S6 shows the Sb 3d spectra of CoSb electrodes upon desodiation (charging).…”
Section: Cosb 3na 3ementioning
confidence: 99%
“…Figure 6b compares the X-ray photoelectron spectroscopy (XPS) of MoS 2 before and after the transfer process, where the spectra of Mo 3d, S 2s, S 2p, K 2p, and Na 1s are presented. [40,41] There is almost no difference in the spectra of Mo and S of MoS 2 before and after the transfer process. For both cases, the S 2p 3/2 and 2p 1/2 peaks were located at ≈162.9 and ≈163.9 eV, while the Mo 3d 5/2 , 3d 3/2 , and S 2s peaks were located at ≈229.9, ≈233.2, and ≈227.2 eV, respectively.…”
Section: Resultsmentioning
confidence: 95%
“…[ 2,15,42,43 ] The relative concentration of as-grown Ti 3+ species in the oxygen-defi cient a -STO cells is 45%-65% higher than that of stoichiometric cells. [ 43,44 ] Moreover, the presence of oxygen during the sputtering of stoichiometric a -STO oxides facilitates negative ion creation and re-sputtering processes [ 44,45 ] that lead to the creation of misfi t Ti 2+ metallic suboxide species. [ 43,44 ] Moreover, the presence of oxygen during the sputtering of stoichiometric a -STO oxides facilitates negative ion creation and re-sputtering processes [ 44,45 ] that lead to the creation of misfi t Ti 2+ metallic suboxide species.…”
Section: Defect Chemistry Of a -Sto Mim Cellsmentioning
confidence: 99%
“…a -STO oxides sputtered in pure argon atmosphere develop inherent oxygen vacancies due to heavy Ar + ion bombardment and preferential removal of oxygen atoms in the vacuum system. [ 43,44 ] Moreover, the presence of oxygen during the sputtering of stoichiometric a -STO oxides facilitates negative ion creation and re-sputtering processes [ 44,45 ] that lead to the creation of misfi t Ti 2+ metallic suboxide species. [ 40,46 ] These stationary misfi t species contribute to a greater degradation of the oxide layer during the high-fi eld-forming process.…”
Section: Defect Chemistry Of a -Sto Mim Cellsmentioning
confidence: 99%