source, ultrasensitive sensor, have been demonstrated using the mechanically exfoliated MoS 2 flakes from its bulk crystal. [1][2][3][4] Because of poor management in thickness, scalability, and uniformity, however, mechanical exfoliation is difficult for future practical applications. Therefore, new routes to synthesize TMDCs over a large area are actively explored mainly based on powder-source chemical vapor deposition (powder-source CVD) and metalorganic chemical vapor deposition (MOCVD). [5,6] Due to low-cost and straightforward experimental setup, powder-source CVD has been widely used for TMDCs growth, where both solid precursors of transition metal oxides (MoO 3 or WO 3 ) and elemental chalcogen (sulfur/ selenium) powders are evaporated, transported, and mixed in the heated furnace for TMDCs deposition. Powder-source CVD has promoted enormous advances in fundamental studies but lacks the ability in controlling the supply of these precursors precisely and independently, making it difficult to realize scalable growth on a large wafer. Moreover, the poisoning effect of transition metal oxides caused by chalcogen vapor is typically inevitable in powder-source CVD, [7] which further degrades the controllability and reproducibility of growth. Vapor-phase-assisted growth of MoS 2 is also reported recently, where MoO 3−x precursor film is pre-deposited on a substrate, followed by a postsulfidation process to form relatively uniform MoS 2 layers. However, flexible and precise control of the MoO 3 supply is still disabled for this method. [8] In contrast, MOCVD has been proven to be a scalable and industrial technique for the growth of conventional III-V semiconductors. [9,10] In recent years, MOCVD has also been used for 2D materials growth, including TMDCs. [6,11] In addition to the long deposition time commonly required for monolayer growth, MOCVD growth of TMDCs typically suffers from unintentional carbon contamination, leading to inferior crystallinity. [12,13] Hence, scalable growth of TMDCs with high crystalline quality and less carbon contamination is strongly desirable but still challenging. Besides the requests for growth techniques, the selection of substrate could be another crucial factor to boost and optimize 2D materials growth. A wide variety of substrates, such as sapphire, SiO 2 /Si, Ga 2 O 3 , etc., have been utilized for TMDCs growth. [14][15][16][17][18] Among them, glass substrate shows several advantages, other than its lower cost, both in growth processes and device applications of A newly developed oxide scale sublimation chemical vapor deposition (OSSCVD) technique for 2D MoS 2 growth is reported. Gaseous MoO 3 , which is supplied separately from H 2 S, can be generated in situ by flowing O 2 over Mo metal with oxidation and sublimation processes. In this method, particularly, controllably and abruptly modulating the supply of MoO 3 is achievable by precisely tuning O 2 flow. Having appropriate conditions, where the generation rate of MoO 3 on the Mo metal surface is not larger than its sub...