AlGaN HEMTs on patterned resistive/conductive SiC templates

Prystawko, P.; Sarzynski, M.; Nowakowska-Siwinska, Anna; Crippa, Danilo; Kruszewski, Piotr; Wojtasiak, Wojciech; Leszczyński, M.

doi:10.1016/j.jcrysgro.2016.11.078

Cited by 5 publications

(2 citation statements)

References 10 publications

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“…The surface roughness RMS is 1.47 nm, which is smaller than the metal–organic chemical vapor deposition (MOCVD) III–nitride epitaxies previously reported on the large angle (4° or 8°) off‐axis 4H‐SiC substrates [ 12,18,20,22 ] and even smaller than that on the 2° off‐axis 4H‐SiC substrate. [ 23–25 ] No cracks are observed on the sample surface. The surface roughness is mainly raised by the triangle pyramid pits, which is caused by TD terminations on the top surface during the step‐flow growth.…”

Section: Characterization Resultsmentioning

confidence: 99%

Strain Release in GaN Epitaxy on 4° Off‐Axis 4H‐SiC

et al. 2022

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A hybrid field‐effect transistor (HyFET), superior for power electronic applications, can be created by harnessing the merits of two representative wide‐bandgap semiconductors, gallium nitride (GaN) and silicon carbide (SiC). Yet, the incompactness in the epitaxy techniques hinders the development of the HyFET—GaN is usually grown on on‐axis foreign substrates including SiC, whereas SiC homoepitaxy prefers off‐axis substrates. This work presents a GaN‐based heterostructure epitaxially grown on a conventional 4° off‐axis 4H‐SiC substrate, which manifests its high quality and suitability for constructing GaN‐based high‐electron‐mobility transistors, thereby suggesting a practical approach to realizing HyFETs. In the meanwhile, a distinct two‐step biaxial strain‐relaxation process is proposed and studied with comprehensive characterizations.

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Section: Characterization Resultsmentioning

confidence: 99%

Strain Release in GaN Epitaxy on 4° Off‐Axis 4H‐SiC

et al. 2022

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“…The period, P , the distance between metal stripes, and the size of the grating area were 16 and 7 μm, 8, and 2.9 μm, and 1 × 1 mm 2 and 2 × 2 mm 2 for Sample 1 and Sample 2, respectively. It is worthwhile to note that all of the samples were processed in line with the AlGaN/GaN HEMTs and the test devices described elsewhere …”

Section: Samples and Measurementsmentioning

confidence: 99%

Reflectivity of Plasmon–Phonon Modes in Grating‐Coupled AlGaN/GaN Heterostructures Grown on SiC and GaN Substrates

Janonis

Jakštas

Kašalynas

et al. 2018

Physica Status Solidi (b)

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Reflectivity of the plasmon–phonon modes in grating‐coupled AlGaN/GaN heterostructures grown either on GaN or on SiC substrates were studied across the Reststrahlen band of semiconductors. The reflection spectra are experimentally obtained and fitted with the numerical data modeled using a rigorous coupled wave analysis method. Analysis of the field plots revealed that the origin of the intense multipeak reflectance minima can be attributed to the strong phonon interaction with the grating plasmons, demonstrating new possibilities for the localization of phonon‐polariton modes within AlGaN/GaN layers. The results are important for the optical and electrical engineering of new sensors, emitters, and modulators employing wide bandgap semiconductor junctions coupled with the metal gratings of the specified design.

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