AlGaN/GaN self-aligned MODFET with metal oxide gate for millimeter wave application

The Influence of AlGaN Barrier-Layer Thickness on the GaN HEMT Parameters for Space Applications

“…Choosing the model of electron transporting, we took account balance between speed of calculations and sufficient accuracy. Nowadays it is clear that calculations of the drift-diffusion model cannot satisfy the demands of practice in the calculations of submicron transistors [10][11][12][13][14][15][16]. Accounting of the results by the Monte Carlo method in conjunction with the existing hydrodynamic model is the best choice in many cases, in our opinion.…”

An Extended Temperature Model Based on the Trapping Effect for Drain‐Source Current in GaN HEMTs

“…As a core parameter to obtain the electrical characteristics of GaN HEMTs, the V off directly determines the accuracy of the I-V model. The device's channel only conducts when the gate-source voltage V gs equals V off , which can be defined as Equation (1) based on the AlGaN/GaN heterojunction's energy band structure. [8] Where ϕ b is the Schottky barrier, q is the elementary charge, N D is the donor doping density in the barrier layer, d AlGaN and ε AlGaN are the thickness and the relative permittivity of the AlGaN layer, respectively, and ε 0 is the vacuum permittivity.…”

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In recent years, AlGaN/GaN high electron mobility transistors (HEMTs) have been recognized as key devices for achieving both high power and high frequency characteristics in extreme environments, and have a wide range of applications in wireless amplifiers, power electronic circuits, radars, and for industrial process monitoring and control. [1][2][3][4] Compared with traditional silicon-based devices, GaN HEMTs have higher thermal capacitance, breakdown voltage, and saturated drift velocity, which are very suitable for working in hostile environmental conditions. Moreover, the thermal noise and flicker noise of GaN HEMTs are markedly decreased at cryogenic temperatures, and the low-noise amplifier based on GaN HEMTs is also applied in quantum computing and deep space exploration.

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