Temperature dependent analytical model for current–voltage characteristics of AlGaN/GaN power HEMT

Huque, M.A.; Eliza, Sazia A.; Rahman, Talha; Huq, Hasina F.; Islam, Syed K.

doi:10.1016/j.sse.2009.01.004

Cited by 81 publications

(31 citation statements)

References 27 publications

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“…Recently, much research has been interested in the synthesis and characterization of nanostructures such as sulfides, oxides and nitrides [1][2][3]. These nanometer-sized inorganic materials can represent an extensive range of optical and electrical properties [4,5].…”

Section: Introductionmentioning

confidence: 99%

A simple sonochemical approach for synthesis and characterization of Zn2SiO4 nanostructures

Masjedi-Arani

Salavati‐Niasari

2016

Ultrasonics Sonochemistry

166

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Zn2SiO4 nanoparticles have been successfully prepared via a simple sonochemical method, for the first time. The effect of various parameters including ultrasonic power, ultrasonic irradiation time and different surfactants were investigated to reach optimum condition. The as-prepared nanostructures were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), transmittance electron microscopy (TEM), Fourier transform infrared (FT-IR) spectra and energy dispersive X-ray microanalysis (EDX). The photocatalytic activity of Zn2SiO4 nano and bulk structures were compared by degradation of anionic dye methyl orange in aqueous solution under UV-light irradiation. Moreover, the cyclic voltammetry analysis of Zn2SiO4 nano and bulk structures were investigated.

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Section: Introductionmentioning

confidence: 99%

A simple sonochemical approach for synthesis and characterization of Zn2SiO4 nanostructures

Masjedi-Arani

Salavati‐Niasari

2016

Ultrasonics Sonochemistry

166

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show abstract

“…Recently, much research has been focused on the synthesis and characterization of nanomaterials such as sulfides, oxides and nitrides [1][2][3]. These nanometer-sized inorganic materials can exhibit a wide range of optical and electrical properties [4,5].…”

Section: Introductionmentioning

confidence: 99%

Preparation and characterization of Zn2SiO4: Mn phosphors with hydrothermal methods

Zheng

et al. 2010

Journal of Luminescence

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“…Choosing the model of electron transporting, we took account balance between speed of calculations and sufficient accuracy. Nowadays it is clear that calculations of the drift-diffusion model cannot satisfy the demands of practice in the calculations of submicron transistors [10][11][12][13][14][15][16]. Accounting of the results by the Monte Carlo method in conjunction with the existing hydrodynamic model is the best choice in many cases, in our opinion.…”

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confidence: 99%

The Influence of AlGaN Barrier-Layer Thickness on the GaN HEMT Parameters for Space Applications

Гудков

Шашурин

Vyuginov

et al. 2017

Proceedings of the Scientific-Practical Conference "Research and Development - 2016"

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Temperature dependent analytical model for current–voltage characteristics of AlGaN/GaN power HEMT

Cited by 81 publications

References 27 publications

A simple sonochemical approach for synthesis and characterization of Zn2SiO4 nanostructures

A simple sonochemical approach for synthesis and characterization of Zn2SiO4 nanostructures

Preparation and characterization of Zn2SiO4: Mn phosphors with hydrothermal methods

The Influence of AlGaN Barrier-Layer Thickness on the GaN HEMT Parameters for Space Applications

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