AlGaN/GaN High Electron Mobility Transistors for Cardiovascular Disease (CVD) Marker Detection

Chu, Chia-Ho; Sarangadharan, Indu; Regmi, Abiral; Chen, Yi-Ting; Wang, Yulin

doi:10.1149/06913.0011ecst

Cited by 1 publication

(1 citation statement)

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“…In Refs [63,64] and [66], electric-double-Layer HEMT were fabricated, in order to defeat the severe chargescreening effect caused by high ionic strength in solution. The antibodies or the aptamers were grafted on the gold electrodes as well as in Ref [65] where the authors used a disposable extended gate.…”

Section: Minireviewmentioning

confidence: 99%

Electrochemical Affinity Sensors Using Field Effect Transducer Devices for Chemical Analysis

2021

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The review presents advances and main challenges of the affinity sensors based on field-effect transistors published during the last five years. The different nanomaterial-based field-effect transistors are classified according to the nature of the nanomaterials, beginning by silicon, the "gold-standard" semiconductor, the gallium nitride semiconductor, the organic semiconductors, the silicon nanowires, the inorganic nanomaterials, the carbon nanotubes and the graphene. Due to its exceptional electrical properties, the main works are devoted to graphene. The obtained analytical performances for the detection of biomarkers, of DNA sequences and of miRNA are listed. The relation between the operational conditions -nature of the nanomaterials, procedure of preparation, choice of the receptor molecule, method of immobilization -and the analytical performance are discussed. The perspective of industrialization of these affinity sensors based on field-effect transistors is discussed.

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