AlGaN/GaN High Electron Mobility Transistor degradation under on- and off-state stress

Douglas, Erica Ann; Chang, C. Y.; Cheney, David; Gila, B. P.; Lo, Chien-Fong; Liu, Lu; Holzworth, R. H.; Whiting, Patrick; Jones, K. S.; Via, G. D.; Kim, Jinhyung; Jang, Soohwan; Ren, F.; Pearton, S. J.

doi:10.1016/j.microrel.2010.09.024

Cited by 33 publications

(18 citation statements)

References 20 publications

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“…Self-heating leads to reduced device performance and may result in a device failure due to contact degradation [5,20]. In fact, Schottky contact is the most likely cause for temperatureinduced permanent degradation [5,21]. Thus, knowing gate metal temperature, is essential for reliability purposes.…”

Section: 0±02)·10mentioning

confidence: 99%

Transient Thermoreflectance for Gate Temperature Assessment in Pulse Operated GaN-Based HEMTs

Martin-Horcajo

Pomeroy

Lambert

et al. 2016

IEEE Electron Device Lett.

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Section: 0±02)·10mentioning

confidence: 99%

Transient Thermoreflectance for Gate Temperature Assessment in Pulse Operated GaN-Based HEMTs

Martin-Horcajo

Pomeroy

Lambert

et al. 2016

IEEE Electron Device Lett.

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“…17,18 The piezoelectric properties contribute advantageously to the formation of the 2DEG present at the AlGaN/GaN interface. However, at high bias (with associated high electric fields) the inverse piezoelectric showing sharp interface and evidence for considerable oxygen.…”

Section: Discussionmentioning

confidence: 99%

Transmission electron microscopy characterization of electrically stressed AlGaN/GaN high electron mobility transistor devices

Johnson

Cullen

Liu

et al. 2012

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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A set of AlGaN/GaN high electron mobility transistor devices has been investigated using step-stress testing, and representative samples of undegraded, source-side-degraded, and drain-side-degraded devices were examined using electron microscopy and microanalysis. An unstressed reference sample was also examined. All tested devices and their corresponding transmission electron microscopy samples originated from the same wafer and thus received nominally identical processing. Step-stressing was performed on each device and the corresponding current–voltage characteristics were generated. Degradation in electrical performance, specifically greatly increased gate leakage current, was shown to be correlated with the presence of crystal defects near the gate edges. However, the drain-side-degraded device showed a surface pit on the source side, and another region of the same device showed no evidence of damage. Moreover, significant metal diffusion into the barrier layer from the gate contacts was also observed, as well as thin amorphous oxide layers below the gate metal contacts, even in the unstressed sample. Overall, these observations emphasize that gate-edge defects provide only a partial explanation for device failure.

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“…However, it is well known that GaN-based devices exhibit degradation of their performance, which was ascribed for example to the generation of defects through converse piezoelectric effect [2]. Additionally, it was indicated that reverse-bias degradation of GaN-based HEMTs and Schottky diodes could be time-dependent mechanism for a given GaN-based technology [3]. The Schottky gate contacts prepared on AlGaN/GaN-based structure determine the basic properties of particular HEMT devices.…”

Section: Introductionmentioning

confidence: 99%

Electrical Properties of Recessed Algan/Gan Schottky Diodes Under off–State Stress

Florovic¹,

Kováč²,

Benko³

et al. 2014

Journal of Electrical Engineering

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Electrical properties of recessed and non-recessed AlGaN/GaN Schottky diodes under off-state stress were investigated. The samples were consecutively stressed by the stepped negative bias ( −60 V). Before and after the stress I− V and C−V characteristics were evaluated to verify the device degradation process. Finally, the degradation mechanism and the influence of AlGaN recessed layer thickness on the electrical properties of the Schottky diodes were analysed. It was found that the short time stress influence on I−V characteristics was most negligible for the non-recessed sample. Shallow and deep recessed samples exhibited initial trap filling and reverse current decrease. Generally it was found that the stress voltage near 60 V caused recoverable device degradation.

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AlGaN/GaN High Electron Mobility Transistor degradation under on- and off-state stress

Cited by 33 publications

References 20 publications

Transient Thermoreflectance for Gate Temperature Assessment in Pulse Operated GaN-Based HEMTs

Transient Thermoreflectance for Gate Temperature Assessment in Pulse Operated GaN-Based HEMTs

Transmission electron microscopy characterization of electrically stressed AlGaN/GaN high electron mobility transistor devices

Electrical Properties of Recessed Algan/Gan Schottky Diodes Under off–State Stress

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