AlGaN/GaN-heterostructures on (111) 3C-SiC/Si pseudo substrates for high frequency applications

Tonisch, Katja; Jatal, Wael; Niebelschuetz, F.; Romanus, H.; Baumann, Uwe; Schwierz, Frank; Pezoldt, Jörg

doi:10.1016/j.tsf.2011.07.003

Cited by 23 publications

(17 citation statements)

References 43 publications

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“…We believe that the same processes occur during the growth SiC on NP‐Si(100). It should be noted that the SiC layer on a silicon substrate has been successfully used to create transistors with high electron mobility based on AlGaN/GaN heterostructures . The template SiC/Si(111) was successfully used for growth AlN, GaN by MOCVD and HVPE …”

Section: Methodsmentioning

confidence: 99%

Semipolar GaN(10–11) Epitaxial Layer Prepared on Nano‐Patterned SiC/Si(100) Template

Бессолов

Zubkova

Konenkova

et al. 2018

Physica Status Solidi (b)

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A new approach is proposed to the synthesis of a semipolar GaN on a Si(100) substrate at the surface of which the V-shaped nanostructures with the characteristic size of elements as low as 100 nm are formed. It has been demonstrated that application of buffer layers of 3C-SiC and AlN enables formation of the GaN(10-11) layer characterized by the full width at half maximum value as low as ω θ 45 arcmin for the X-ray diffraction rocking curve. The model based on anisotropic nucleation of AlN on the V-shaped nanostructure is proposed to explain the growth of the GaN layer in a single semipolar direction.

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Section: Methodsmentioning

confidence: 99%

Semipolar GaN(10–11) Epitaxial Layer Prepared on Nano‐Patterned SiC/Si(100) Template

Бессолов

Zubkova

Konenkova

et al. 2018

Physica Status Solidi (b)

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“…They can be avoided by forming a SiC transition layer on the Si substrate as proposed in [6]. Significant efforts are spent on growing high-quality GaN HEMT structures on Si [7][8][9]. In spite of a lot of progress achieved during the past, the RF performance of GaN HEMTs on Si still lags behind that of GaN HEMTs on SiC.…”

Section: Introductionmentioning

confidence: 99%

GaN HEMTs on Si substrate with high cutoff frequency

Jatal¹,

Tonisch²,

Baumann

et al. 2014

The Tenth International Conference on Advanced Semiconductor Devices and Microsystems

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We report on GaN HEMTs on Si substrates with high cutoff frequency and low contact resistance. HEMTs with two barriers designs and two source/drain metallization schemes have been fabricated and characterized. Our 100-nm gate transistors show a maximum drain current density of 1.4 A/mm and a peak transconductance of 427 mS/mm. The fastet transistors have a gate length of 80 nm and achieve a cutoff frequency f T of 180 GHz. This is the best f T performance reported for GaN HEMTs on Si reported so far and rivals the fastest GaN HEMTs on SiC with comparable gate length.

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“…The root mean square roughnesses (R q ), averaged from multiple random scans of 10 μm × 10 μm over each wafer, were equivalent and equal to 4.5 nm for all DBR structures. While a smaller roughness is always preferable to serve as a better template for subsequent epitaxial growth, high quality III-N hetero-structures have successfully been grown using SiC-on-Si templates with similar roughness 24 25 . Finally, the variation of wafer curvature following the stack deposition was measured and shows a similar convex-shaped change for both types of DBR, demonstrating a residual tensile stress at room temperature as expected for SiC and AlGaN thin-film growths on Si 1 10 .…”

Section: Dbrs Characterization and Discussionmentioning

confidence: 99%

Vertically Conductive Single-Crystal SiC-Based Bragg Reflector Grown on Si Wafer

Massoubre

Wang

Hold

et al. 2015

Sci Rep

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Single-crystal silicon carbide (SiC) thin-films on silicon (Si) were used for the fabrication and characterization of electrically conductive distributed Bragg reflectors (DBRs) on 100 mm Si wafers. The DBRs, each composed of 3 alternating layers of SiC and Al(Ga)N grown on Si substrates, show high wafer uniformity with a typical maximum reflectance of 54% in the blue spectrum and a stopband (at 80% maximum reflectance) as large as 100 nm. Furthermore, high vertical electrical conduction is also demonstrated resulting to a density of current exceeding 70 A/cm2 above 1.5 V. Such SiC/III-N DBRs with high thermal and electrical conductivities could be used as pseudo-substrate to enhance the efficiency of SiC-based and GaN-based optoelectronic devices on large Si wafers.

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AlGaN/GaN-heterostructures on (111) 3C-SiC/Si pseudo substrates for high frequency applications

Cited by 23 publications

References 43 publications

Semipolar GaN(10–11) Epitaxial Layer Prepared on Nano‐Patterned SiC/Si(100) Template

Semipolar GaN(10–11) Epitaxial Layer Prepared on Nano‐Patterned SiC/Si(100) Template

GaN HEMTs on Si substrate with high cutoff frequency

Vertically Conductive Single-Crystal SiC-Based Bragg Reflector Grown on Si Wafer

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