We have systematically investigated the impact of device size scaling on the light output, spectral shift, and self-heating of 400 nm InGaN light-emitting diodes (LEDs). Devices with diameters in the range 20–300 μm have been studied. It is shown that smaller LED pixels can deliver higher power densities (despite the lower absolute output powers) and sustain higher current densities. Investigations of the electroluminescence characteristics of differently sized pixels against current density reveal that the spectral shift is dominated by blueshift at the low current density level and then by redshift at the high current density level, owing to the competition between the bandgap shrinkage caused by self-heating and band-filling effects. The redshift of the emission wavelength with increasing current density is much faster and larger for the bigger pixels, suggesting that the self-heating effect is also size dependent. This is further confirmed by the junction-temperature rise measured by the established spectral shift method. It is shown that the junction-temperature rise in smaller pixels is slower, which in turn explains why the smaller redshift of the emission wavelength with current density is present in smaller pixels. The measured size-dependent junction temperature is in reasonable agreement with finite element method simulation results.

We report the high-frequency modulation of individual pixels in 8×8 arrays of III-nitride-based micro-pixellated light-emitting diodes, where the pixels within the array range from 14 to 84 µm in diameter. The peak emission wavelengths of the devices are 370, 405, 450 and 520 nm, respectively. Smaller area micro-LED pixels generally exhibit higher modulation bandwidths than their larger area counterparts, which is attributed to their ability to be driven at higher current densities. The highest optical -3 dB modulation bandwidths from these devices are shown to be in excess of 400 MHz, which, to our knowledge, are the highest bandwidths yet reported for GaN LEDs. These devices are also integrated with a complementary metal-oxidesemiconductor (CMOS) driver array chip, allowing for simple computer control of individual micro-LED pixels. The bandwidth of the integrated micro-LED/CMOS pixels is shown to be up to 185 MHz; data transmission at bit rates up to 512 Mbit/s is demonstrated using on-off keying non return-to-zero modulation with a bit-error ratio of less than 1×10 −10 , using a 450 nmemitting 24 µm diameter CMOS-controlled micro-LED. As the CMOS chip allows for up to 16 independent data inputs, this device demonstrates the potential for multi-Gigabit/s parallel data transmission using CMOS-controlled micro-LEDs.

Within optogenetics there is a need for compact light sources that are capable of delivering light with excellent spatial, temporal, and spectral resolution to deep brain structures. Here, we demonstrate a custom GaN-based LED probe for such applications and the electrical, optical, and thermal properties are analyzed. The output power density and emission spectrum were found to be suitable for stimulating channelrhodopsin-2, one of the most common light-sensitive proteins currently used in optogenetics. The LED device produced high light intensities, far in excess of those required to stimulate the light-sensitive proteins within the neurons. Thermal performance was also investigated, illustrating that a broad range of operating regimes in pulsed mode are accessible while keeping a minimum increase in temperature for the brain (0.5°C). This type of custom device represents a significant step forward for the optogenetics community, allowing multiple bright excitation sites along the length of a minimally invasive neural probe.

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Displays based on microsized gallium nitride light-emitting diodes possess extraordinary brightness. It is demonstrated here both theoretically and experimentally that the layout of the n-contact in these devices is important for the best device performance. We highlight, in particular, the significance of a nonthermal increase of differential resistance upon multipixel operation. These findings underpin the realization of a blue microdisplay with a luminance of 10 6 cd/m 2 .

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An on-chip multi-channel visible light communication (VLC) system is realized through a blue (450 nm) GaN-based micron-size light-emitting diode (µLED) array integrated with complementary metal-oxide-semiconductor (CMOS) electronics. When driven by a custom-made CMOS driving board with 16 independent parallel data input ports, this µLED array device is computer controllable via a standard USB interface and is capable of delivering high speed parallel data streams for VLC. A total maximum error-free data transmission rate of 1.5 Gbit/s is achieved in free space by modulating four µLED pixels simultaneously using an on-off key non-return to zero modulation scheme. Electrical and optical crosstalk of the system has also been investigated in detail and the further optimization of CMOS design to minimize the crosstalk is proposed.

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