AlGaInP light-emitting diodes with mirror substrates fabricated by wafer bonding

Horng, Ray−Hua; Wuu, Dong−Sing; Sun, Wei; Tseng, C. Y.; Huang, Man-Fang; Chang, Ke; Liu, P. H.; Lin, Kwang‐Lung

doi:10.1063/1.125228

Cited by 39 publications

(14 citation statements)

References 9 publications

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“…1-3 Therefore, considerable effort has been made to enhance the performance of AlGaInP LEDs, including both the internal quantum efficiency [4][5][6] and the extraction efficiency. [7][8][9][10][11][12][13][14] Hence, current AlGaInP LEDs exhibit a luminous efficiency of as high as 100 lm/W, 14 and have already been adopted in numerous applications. However, in the light of rapid advances in device performance, there are a few studies on the fundamental properties of LED emission, such as spectral width and shape.…”

Section: Spectral Shape and Broadening Of Emission From Algainp Lightmentioning

confidence: 99%

Spectral shape and broadening of emission from AlGaInP light-emitting diodes

Chen¹,

Lien²,

Yang³

et al. 2009

Journal of Applied Physics

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Articles you may be interested inSelf-heating and athermal effects on the electroluminescence spectral modulation of an AlGaInP light-emitting diode J. Appl. Phys. 110, 073103 (2011); 10.1063/1.3643005 Effects of In composition on ultraviolet emission efficiency in quaternary InAlGaN light-emitting diodes on freestanding GaN substrates and sapphire substrates J. Appl. Phys. 98, 113514 (2005); 10.1063/1.2134885 Experimental determination of the internal quantum efficiency of AlGaInP microcavity light-emitting diodes Erratum: "Evidence of localization effects in InGaN single-quantum-well ultraviolet light-emitting diodes" [Appl.This work presents a model for describing the shape of the spontaneous emission spectrum from a quantum-well structure. A function is introduced to specify the probability distribution for the effective band gap. Based on this model, the coexisting carrier thermal broadening and effective band gap broadening in the spontaneous emission spectrum can be separated from each other. Applying this model to the spectra of AlGaInP light-emitting diodes reveals that the probability distribution functions are almost Gaussian. Therefore, the emission spectra can be described by an analytical expression with fitted parameters. Possible reasons for this band gap broadening are discussed. The determination of the junction temperatures from the emission spectra and possible deviations of the results thus determined are also elaborated.

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Section: Spectral Shape and Broadening Of Emission From Algainp Lightmentioning

confidence: 99%

Spectral shape and broadening of emission from AlGaInP light-emitting diodes

Chen¹,

Lien²,

Yang³

et al. 2009

Journal of Applied Physics

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“…Meanwhile, some groups suggested a multilayer reflective structure for transparent insulator/Ag forms, such as Si 3 N 4 and SiO 2 , which can improve reflectance performance by engineering optical transport paths [ 12 ]. Nevertheless, the use of resistive parts such as the metal alloy or insulating layer in reflector inevitably generates high power consumption and self-heating issues [ 13 ]. The reflective properties, electrical characteristics and thermal durability of ODRs can be effectively controlled by material selection and reflector architecture.…”

Section: Introductionmentioning

confidence: 99%

Enhanced Light Output Power on Near-Infrared Light-Emitting Diodes with TITO/Ag Multilayer Reflector

Lee¹,

Jang

Kim³

et al. 2022

Micromachines

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A titanium–indium tin oxide (TITO) multilayer reflector was investigated to improve the light efficiency of high-power, near-infrared, light-emitting diodes (NIR-LEDs). The TITO/Ag was fabricated by combining a patterned TITO and an omnidirectional reflector (ODR). For fabricating a high-power NIR-LED, the wafer bond process required the TITO reflective structure, which has patterns filled by AlAu contact metal, bonded directly to the Ag reflector deposited on the silicon wafer. Among Ag-based single- and multilayer reflectors, the TITO/Ag showed the highest reflectance (R = 96%), which was favorable for wafer-bonded high-power NIR-LEDs. Therefore, the TITO/Ag reflector enabled the production of wafer-bonded NIR-LED chips that exhibit superior output performance (190 mW) compared with conventional cases using a single Ag reflector.

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“…Heterostructure devices based on III–V compound semiconductors have attracted great attention because of the high mobility and low effective mass of the carriers, the direct band gap, and the tunability of the band gap by modulating components, which combine to enable many applications such as high-electron-mobility transistors (HEMTs), , quantum-well laser diodes, , light-emitting diodes (LEDs), , and photodetectors. − However, traditional fabrication of III–V semiconductor heterostructures present significant technological challenges because of the lattice-constant mismatch with other substrates and the generation of defects during the processes of direct growth and wafer bonding. − To address these challenges, an epitaxial layer transfer technique was introduced to heterogeneously integrate III–V semiconductor nanomembranes onto arbitrary substrates, whereby, the bonding at heterointerfaces with a large lattice mismatch is facilitated by van der Waals forces during the transfer printing processes. This technique has enabled the fabrication of various III–V heterostructure devices on Si and flexible substrates, including complimentary metal-oxide-semiconductor field-effect transistors (MOSFETs) based on InGaSb and InAs on Si substrates, flexible MOSFETs with InAs on polyimide substrates, spin-FETs with InAs HEMT structures on Si substrates, and broadband photodetectors based on InGaAs and Si heterojunctions .…”

Section: Introductionmentioning

confidence: 99%

Gate-Tunable and Programmable n-InGaAs/Black Phosphorus Heterojunction Diodes

Lee

Lim

et al. 2019

ACS Appl. Mater. Interfaces

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Semiconductor heterostructures have enabled numerous applications in diodes, photodetectors, junction field-effect transistors, and memory devices. Two-dimensional (2D) materials and III–V compound semiconductors are two representative materials providing excellent heterojunction platforms for the fabrication of heterostructure devices. The marriage between these semiconductors with completely different crystal structures may enable a new heterojunction with unprecedented physical properties. In this study, we demonstrate a multifunctional heterostructure device based on 2D black phosphorus and n-InGaAs nanomembrane semiconductors that exhibit gate-tunable, photoresponsive, and programmable diode characteristics. The device exhibits clear rectification with a large gate-tunable forward current, which displays rectification and switching with a maximum rectification ratio of 4600 and an on/off ratio exceeding 105, respectively. The device also offers nonvolatile memory properties, including large hysteresis and stable retention of storage charges. By combining the memory and gate-tunable rectifying properties, the rectification ratio of the device can be controlled and memorized from 0.06 to 400. Moreover, the device can generate three different electrical signals by combining a photoresponsivity of 0.704 A/W with the gate-tunable property, offering potential applications, for example, multiple logic operator. This work presents a heterostructure design based on 2D and III–V compound semiconductors, showing unique physical properties for the development of multifunctional heterostructure devices.

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AlGaInP light-emitting diodes with mirror substrates fabricated by wafer bonding

Cited by 39 publications

References 9 publications

Spectral shape and broadening of emission from AlGaInP light-emitting diodes

Spectral shape and broadening of emission from AlGaInP light-emitting diodes

Enhanced Light Output Power on Near-Infrared Light-Emitting Diodes with TITO/Ag Multilayer Reflector

Gate-Tunable and Programmable n-InGaAs/Black Phosphorus Heterojunction Diodes

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