Gate-Tunable and Programmable n-InGaAs/Black Phosphorus Heterojunction Diodes

Abstract

Semiconductor heterostructures have enabled numerous applications in diodes, photodetectors, junction field-effect transistors, and memory devices. Two-dimensional (2D) materials and III–V compound semiconductors are two representative materials providing excellent heterojunction platforms for the fabrication of heterostructure devices. The marriage between these semiconductors with completely different crystal structures may enable a new heterojunction with unprecedented physical properties. In this study, we demonstrate a multifunctional heterostructure device based on 2D black phosphorus and n-InGaAs nanomembrane semiconductors that exhibit gate-tunable, photoresponsive, and programmable diode characteristics. The device exhibits clear rectification with a large gate-tunable forward current, which displays rectification and switching with a maximum rectification ratio of 4600 and an on/off ratio exceeding 105, respectively. The device also offers nonvolatile memory properties, including large hysteresis and stable retention of storage charges. By combining the memory and gate-tunable rectifying properties, the rectification ratio of the device can be controlled and memorized from 0.06 to 400. Moreover, the device can generate three different electrical signals by combining a photoresponsivity of 0.704 A/W with the gate-tunable property, offering potential applications, for example, multiple logic operator. This work presents a heterostructure design based on 2D and III–V compound semiconductors, showing unique physical properties for the development of multifunctional heterostructure devices.

Artificial Synapses Based on WSe2 Homojunction via Vacancy Migration

“…Compared with the traditional bulk materials, 2D materials can exhibit a number of advantages in the field of the artificial synapse including gate-tunability, low-power-switching, , mechanical flexibility, and easy integration . The device structures of 2D material-based artificial synapses can be classified into two-terminal ,, or three-terminal ,,, lateral-, vertical-, and heterojunction- structures. For three-terminal devices, great effort has been devoted into the ferroelectric-gate synaptic transistors, floating-gate synaptic transistors, and electrolyte-gate synaptic transistors .…”

Recent advances in single crystal narrow band-gap semiconductor nanomembranes and their flexible optoelectronic device applications: Ge, GeSn, InGaAs, and 2D materials

“…92 Y. Lee et al have demonstrated an n-InGaAs/BP diode by adopting double-times transfer printing of each NMs onto a SiO 2 /Si substrate via PDMS stamping. 93 This device offers nonvolatile-memory properties through charge trapping in the native phosphorus oxide, exhibiting unique diode characteristics which are gate-controllable and programmable. These multifunctional properties provide numerous potential applications such as novel advanced logic circuits, controllable electric transformers, and neuromorphic devices.…”

Visible-to-near-infrared photodetectors based on SnS/SnSe2 and SnSe/SnSe2 p−n heterostructures with a fast response speed and high normalized detectivity

“…remaining three peaks at 161.2, 188.4, and 216.1 cm −1 were attributed to the B 3g and A g vibration modes of SnS (position B1) [26,27] . Similarly, peaks corresponding to the E g and A 1g vibration modes of SnSe 2 (position C2), as well as the , B g , and vibration modes of SnSe (position B2) can be found in the Raman spectrum of the SnSe/SnSe 2 heterostructure (position A2) [19] .…”