Al-doped ZnO/Ag-nanowire Composite Electrodes for Flexible 3-Dimensional Nanowire Solar Cells

Pathirane, Minoli; Khaligh, Hadi Hosseinzadeh; Goldthorpe, Irene A.; Wong, William S.

doi:10.1038/s41598-017-07180-1

Cited by 21 publications

(24 citation statements)

References 25 publications

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“…It is important to note that the contact of AZO/Au has not been investigated theoretically and experimentally, which can be used in solar cells. This had been reported in the Ag nanowire electrode on AZO by Pathirane et al [6].…”

Section: Introductionsupporting

confidence: 68%

“…The annealing temperature plays a key role in electrical properties, which can affect the morphological structures and the hopping quantities [5]. For example, Pathirane et al [6] in 2017 investigated the effect of annealing temperature on the efficacy of the AZO/Ag nanowire junction, both structurally and electrically. In another work, Dalouji et al [7] studied the electrical conductivity of C-Ni composite films annealed at a temperature range of 300-800 °C, whose nanoparticle size and Ni concentration could be strongly affected by the annealing temperature.…”

Section: Introductionmentioning

confidence: 99%

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Experimental and theoretical investigations on temperature and voltage dependence of an Au/AZO thin-film Schottky diode

Shokri

Dejam

2018

Int Nano Lett

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In this work, aluminum-doped zinc oxide (AZO) thin films were deposited by DC sputtering on a glass substrate at a typical sputtering power. It was observed that the AZO structure changes on the ZnO crystalline structure. The measurement of the transparency spectrum on the AZO films shows an optical bandgap about 4.3 eV, which the Al doping into ZnO structure pronounced width localized states by Urbach energy that was 0.42 eV. Moreover, the experimental results on the electrical properties of AZO/Au thin film were evaluated at different temperatures by four-point probe. Also, a simulation analysis on the electrical parameters of the Schottky Au/AZO junction has been done. Our calculation is based on the thermionic emission theory, in which by fitting the numerical results with the experimental current-voltage measurements, the barrier height, ideality factor and saturation current have been obtained. Our result confirmed excellent rectifying characteristics. The extracted result may be useful in designing nanoelectronic devices.

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Section: Introductionsupporting

confidence: 68%

Section: Introductionmentioning

confidence: 99%

Experimental and theoretical investigations on temperature and voltage dependence of an Au/AZO thin-film Schottky diode

Shokri

Dejam

2018

Int Nano Lett

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“…Due to the low thickness of the active layer, nanostructured OPVs require precisely controlled fabrication process. Thus, most of the reported works about nanotextured designs have been focused on the transparent electrodes based on silver and copper nanowire arrays or theoretical studies on the architectural engineering of polymer solar cells, confirming the advantages of nanostructures in OPV devices . Furthermore, some groups fabricated OPVs with decent PCE on nanostructured transporting electrodes such as ZnO and ZnS nanowires and thus more systematic studies are required in this regard to enhance the light absorption in organic materials .…”

Section: Introductionmentioning

confidence: 98%

Light Management in Organic Photovoltaics Processed in Ambient Conditions Using ZnO Nanowire and Antireflection Layer with Nanocone Array

Tavakoli

Dastjerdi

Zhao

et al. 2019

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Low carrier mobility and lifetime in semiconductor polymers are some of the main challenges facing the field of organic photovoltaics (OPV) in the quest for efficient devices with high current density. Finding novel strategies such as device structure engineering is a key pathway toward addressing this issue. In this work, the light absorption and carrier collection of OPV devices are improved by employment of ZnO nanowire (NW) arrays with an optimum NW length (50 nm) and antireflection (AR) film with nanocone structure. The optical characterization results show that ZnO NW increases the transmittance of the electron transporting layer as well as the absorption of the polymer blend. Moreover, the as‐deposited polymer blend on the ZnO NW array shows better charge transfer as compared to the planar sample. By employing PC70BM:PV2000 as a promising air‐stable active‐layer, power conversion efficiencies of 9.8% and 10.1% are achieved for NW devices without and with an AR film, indicating 22.5% and 26.2% enhancement in PCE as compared to that of planar device. Moreover, it is shown that the AR film enhances the water‐repellent ability of the OPV device.

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“…They also calculated the barrier height and ideality factor to be about 10 and 0.3 eV, respectively for Au/Al: ZnO devices. Pathirane et al [38] reported the AZO/Ag nanowire (NW) electrodes for solar cells with Ag NW coated on the AZO. However, the barrier height and ideality factor for this particular device were not reported.…”

Section: Introductionmentioning

confidence: 99%

Temperature dependent studies on radio frequency sputtered Al doped ZnO thin film

Bhujbal¹,

Pathan²,

Chaure³

2020

Eng. Sci.

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In this work, highly conductive and transparent Al: ZnO (Al doped ZnO, i. e., AZO) thin films were grown by radio frequency (RF) magnetron sputtering technique at a typical deposition temperature. The effect of deposition temperature on the structural, morphological, optical and electrical properties was studied. The x-ray diffraction (XRD) studies revealed a hexagonal wurtzite crystal structure for all AZO layers with a (002) preferred orientation along the c-axis. Columnar, compact, uniform grain growth of the layer was observed from atomic force microscopy (AFM) images. The deposition temperature had an influence on the surface roughness and average grain size of deposited films, which could be confirmed by means of AFM images. Optical studies confirmed that both optical band gap energy and urbach energy were influenced by the substrate temperature. Highly transparent films with an energy band gap ranging from 3.48 to 3.65 eV were obtained upon changing the deposition temperature from 22 to 400. The presence of defects was confirmed by ℃ photoluminescence (PL) spectra. A systematic measurement of the electrical parameters like barrier height, and ideality factor of the devices (Ag/Al:ZnO) was carried out with the help of I-V characteristic. This study may be useful for the design and fabrication of AZO based electrodes for solar cell applications.

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Al-doped ZnO/Ag-nanowire Composite Electrodes for Flexible 3-Dimensional Nanowire Solar Cells

Cited by 21 publications

References 25 publications

Experimental and theoretical investigations on temperature and voltage dependence of an Au/AZO thin-film Schottky diode

Experimental and theoretical investigations on temperature and voltage dependence of an Au/AZO thin-film Schottky diode

Light Management in Organic Photovoltaics Processed in Ambient Conditions Using ZnO Nanowire and Antireflection Layer with Nanocone Array

Temperature dependent studies on radio frequency sputtered Al doped ZnO thin film

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