Advanced beyond-silicon electronic technology requires discoveries of both new channel materials and ultralow-resistance contacts 1,2 . Atomically thin two-dimensional (2D) semiconductors have great potential for realizing high-performance electronic devices 1,3 . However, because of metal-induced gap states (MIGS) 4-7 , energy barriers at the metalsemiconductor interface, which fundamentally lead to high contact resistances and poor current-delivery capabilities, have restrained the advancement of 2D semiconductor transistors to date 2,8,9 . Here, we report a novel ohmic contact technology between semimetallic bismuth and semiconducting monolayer transition metal dichalcogenides (TMDs) where MIGS is sufficiently suppressed and degenerate states in the TMD are spontaneously formed in contact with bismuth. Through this approach, we achieve zero Schottky barrier height, a record-low contact resistance (R C ) of 123 Ω μm, and a recordhigh on-state current density (I ON ) of 1135 µA µm -1 on monolayer MoS 2 . We also demonstrate that excellent ohmic contacts can be formed on various monolayer semiconductors, including MoS 2 , WS 2 , and WSe 2 . Our reported R C values are a significant improvement for 2D semiconductors, and approaching the quantum limit. This technology unveils the full potential of high-performance monolayer transistors that are on par with the state-of-the-art 3D semiconductors, enabling further device down-scaling and extending Moore's Law.The electrical contact resistance at a metal-semiconductor (M-S) interface has been an increasingly critical, yet unsolved issue for the semiconductor industry, hindering the ultimate

Large-scale and highly ordered 3D perov-skite nanowire (NW) arrays are achieved in nanoengineering templates by a unique vapor-solid-solid reaction process. The excellent material properties, in conjunction with the high integration density of the NW arrays, make them promising for 3D integrated nanoelectronics/optoelectronics. Image sensors with 1024 pixels are assembled and characterized to demonstrate the technological potency.

Flexible thin film solar cells have attracted a great deal of attention as mobile power sources and key components for building-integrated photovoltaics, due to their light weight and flexible features in addition to compatibility with low-cost roll-to-roll fabrication processes. Among many thin film materials, organometallic perovskite materials are emerging as highly promising candidates for high efficiency thin film photovoltaics; however, the performance, scalability, and reliability of the flexible perovskite solar cells still have large room to improve. Herein, we report highly efficient, flexible perovskite solar cells fabricated on ultrathin flexible glasses. In such a device structure, the flexible glass substrate is highly transparent and robust, with low thermal expansion coefficient, and perovskite thin film was deposited with a thermal evaporation method that showed large-scale uniformity. In addition, a nanocone array antireflection film was attached to the front side of the glass substrate in order to improve the optical transmittance and to achieve a water-repelling effect at the same time. It was found that the fabricated solar cells have reasonable bendability, with 96% of the initial value remaining after 200 bending cycles, and the power conversion efficiency was improved from 12.06 to 13.14% by using the antireflection film, which also demonstrated excellent superhydrophobicity.