Al 2 O 3 / NbAlO / Al 2 O 3 sandwich gate dielectric film on InP

Abstract

Al 2 O 3 / NbAlO / Al 2 O 3 sandwich dielectric films were grown on InP substrate and annealed. X-ray reflectivity measurements suggested that 1.0 nm interfacial layer existed at InP interface, x-ray diffraction and high resolution transmission electron microscopy indicated the films were crystallized. X-ray photoelectron spectra indicated the oxidization of InP substrate, and the valence-band offset between the dielectric film and InP interface was calculated to be 3.1 eV. The electrical measurements indicated that the leakage current density was 40 mA/cm2 at gate bias of 1 V, and the equivalent oxide thickness and the dielectric constant were 1.7 and 20 nm, respectively.

Surface and Interfacial Reaction Study of Half Cycle Atomic Layer Deposited Al$_{2}$O$_{3}$ on Chemically Treated InP Surfaces

“…However, this is concurrent with the emergence of the In(PO 3 ) 3 state on all the samples, and in the case of the native oxide sample, a peak at the binding energy of $135:7 eV, which is shifted $6:1 eV from the bulk peak and assigned to P 2 O 5 , is also seen to emerge. 20) Secondly, the amount of phosphorous oxide is also seen to increase on all the samples, 26) highlighted by the ratio of the fitted oxide peak areas to that of the bulk peaks shown in Fig. 3.…”

High-performance GaAs metal-oxide-semiconductor capacitor by using NbAlON as high-k gate dielectric

“…Also, in Table II, a comparison between sample B and some recently reported metal/high-k/n-GaAs devices with relatively good performance (without interfacial passivation and with the dielectric prepared by the sputtering method for fair comparison) indicates that NbAlON is a promising gate dielectric for high-performance GaAs MOS devices. Since NbAlO has been demonstrated as a promising high-k dielectric for the InP MOS device, 40,41 it is possible that the C-V stretch-out, hysteresis, and gate leakage could be improved by using a more appropriate Nb/Al ratio to achieve higher bulk and interfacial qualities for the gate dielectric.…”

Acid Promoter-Modified Cs/Al2O3 Catalyst for Methyl Methacrylate Production by Aldol Condensation of Methyl Propionate with Formaldehyde

“…The XPS analyses were conducted on 5Cs-5Nb/Al 2 O 3 and Al 2 O 3 to ascertain the chemical state of the surface species. A wide peak observed at 74.2 eV in Figure a is attributed to a distinctive peak of the Al–O–Al bonding states. − However, the Al 2p binding energy for 5Cs-5Nb/Al 2 O 3 displays a new small peak around 77.4 eV, which can be assigned to an overlapping for Cs 4d spectra. , These results hint at the possibility of interaction between the Cs and Al species, potentially through Al–O–Cs . A shared peak at 531 eV observed in the O 1s XPS spectra (Figure b) can be attributed to the lattice oxygen in alumina .…”