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Gas sensors have been widely utilized penetrating every aspect of our daily lives, such as medical industry, environmental safety testing, and the food industry. In recent years, two-dimensional (2D) materials have shown promising potential and prominent advantages in gas sensing technology, due to their unique physical and chemical properties. In addition, the ultra-high surface-to-volume ratio and surface activity of the 2D materials with atomic-level thickness enables enhanced absorption and sensitivity. Till now, different gas sensing techniques have been developed to further boost the performance of 2D materials-based gas sensors, such as various surface functionalization and Van der Waals heterojunction formation. In this article, a comprehensive review of advanced gas sensing devices is provided based on 2D materials, focusing on two sensing principles of charge-exchange and surface oxygen ion adsorption. Six types of typical gas sensor devices based on 2D materials are introduced with discussion of latest research progress and future perspectives.

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We have calculated the atomistic mechanism for the HfO2 atomic layer deposition (ALD) using Hf(NEtMe)4 and H2O precursors using density functional theory. On hydroxylated Si surface, our results show overall Hf(NEtMe)4 half-reaction is exothermic by 1.65 eV with a small activation barrier of 0.10 eV. The activation barriers for water half-reaction are 0.24 and 0.20 eV. This indicates HfO2 ALD with Hf(NEtMe)4 and H2O has a faster deposition rate than that with HfCl4 and H2O and can be run at relatively low temperature. However, on H-terminated Si surface, the Hf(NEtMe)4 half-reaction is endothermic by 2.39 eV with high activation barriers. The H2O half-reaction is similar to that on hydroxylated surface which is kinetically favorable. The results suggest that long Hf(NEtMe)4 pulse time and high deposition temperature is required during the initial stage of ALD on H-terminated surface. Moreover, our calculations indicate the reaction byproduct HNEtMe is likely to be bound to the surface after each half-reaction because of high desorption energy of 0.7−0.9 eV. Thus, long precursor purge time should be used if HNEtMe is needed to be removed completely.

The single layer MoS2 is attractive for the use in the next-generation low power nanoelectronic devices because of its intrinsic bandgap compared to graphene. In this work, we investigated the transport property of a p-n junction based on two-dimensional MoS2. The n-type and p-type doping are realized through substituting sulfur with chlorine and phosphorus. The device exhibited backward diode-like behavior with large rectifying ratios. We attribute the observed current-voltage characteristics to different heavy doping effect caused by chlorine and phosphorus. Our results may throw light on the electronic modulation of MoS2 and realizations of complemented logics devices based on MoS2.

The as-grown single crystalline Gd2O3 thin film on Si(100) substrate suffers from flatband voltage instability and large hysteresis which are possibly due to the intrinsic dangling bonds induced by the existing binding mismatch at the Gd2O3∕Si(100) interface. The instability of flatband voltage and hysteresis of Pt∕Gd2O3∕Si and W∕Gd2O3∕Si structures can be fully eliminated by the introduction of traditional forming gas annealing with proper process optimization. Both optimized metal-oxide-semiconductor structures show negligible hysteresis with the interface state at the magnitude order of 1011∕cm2eV at the midgap of silicon and can be considered for the future of complementary metal oxide semiconductor devices.

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