Air Stable n-type Top Gate Carbon Nanotube Filed Effect Transistors with Silicon Nitride Insulator Deposited by Thermal Chemical Vapor Deposition

Abstract

The air stable n-type carbon nanotube channel filed effect transistor (CNT-FET) with the top gate structure was successfully fabricated using the silicon nitride gate insulator deposited by the thermal chemical vapor deposition. The effects of the silicon nitride insulator on the electrical properties of the CNT-FET have been investigated. The p-type characteristics of the CNT-FET can be converted to the n-type characteristics in high yield of 90% only by depositing the silicon nitride insulator. The drain current is as high as few µA order. The n-type top gate CNT-FET stably operated even in ambient air.

MEMS process compatibility of multiwall carbon nanotubes

“…While Kojima et al 23 reported damage to the nanotube when using a PECVD process (process parameters were not given), here, the PECVD process was found not to cause sig- arc-discharge tubes. The difference in result between the current study and Kojima et al 23 could be attributed to variations in the PECVD processing parameters, as well as variations in the nanotube properties. In general, PECVD is capable of coating with SiN x without damaging the underlying nanotubes.…”

“…Prior studies 10,15,23,24 have reported using SiN x with CNTs, applied by thermal CVD processes, with success. While Kojima et al 23 reported damage to the nanotube when using a PECVD process (process parameters were not given), here, the PECVD process was found not to cause sig- arc-discharge tubes. The difference in result between the current study and Kojima et al 23 could be attributed to variations in the PECVD processing parameters, as well as variations in the nanotube properties.…”

Silicon–Nitride-Passivated Bottom-Up Single-Electron Transistors

“…The necessity for working devices in realistic applications with uniform and stable device characteristics led us to the idea of passivation with a dielectric layer. Indeed, the passivation of nanoscale devices has been reported, [13][14][15][16][17] and SiN x , in particular, appears to be a very good candidate material to realize this. 18) Moreover, by placing SETs under a passivation layer, we can more easily create the top-gate electrode and wiring, that would facilitate the adoption of chemically assembled SETs in conventional silicon-based integrated circuits.…”

Quantitative Detection of Protein Using a Top-gate Carbon Nanotube Field Effect Transistor

“…Nanostructured carbon materials, such as carbon nanotubes (CNTs), , carbon nanohorns, , carbon nanowires, and graphite nanofibers, are attractive for various applications, such as field emission, hydrogen generation, hydrogen and methane storage, − and capacitors . The CNT field-effect transistor (FET) , would be one of the most practical. An important application of CNT-FETs is in the development of biosensors, which sense living biological molecules.…”