Silicon–Nitride-Passivated Bottom-Up Single-Electron Transistors

Hackenberger, Guillaume; Azuma, Yasuo; Kano, Shinya; Tanaka, Daisuke; Sakamoto, Masanori; Teranishi, Toshiharu; Ohno, Yasuhide; Maehashi, Kenzo; Matsumoto, Kazuhiko; Majima, Yutaka

doi:10.7567/jjap.52.110101

Cited by 9 publications

(16 citation statements)

References 22 publications

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“…In our previous chemically assembled SETs, [48][49][50][51][52][54][55][56] a C10S2/C8S mixed SAM was used to anchor a C10S-protected Au nanoparticle and different R 1 and R 2 pair values were observed. In contrast, here we used a C8S2/C6S mixed SAM to anchor a C10S-protected Au nanoparticle to reduce the tunneling resistances.…”

Section: Resultsmentioning

confidence: 99%

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Rhombic Coulomb diamonds in a single-electron transistor based on an Au nanoparticle chemically anchored at both ends

et al. 2016

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Rhombic Coulomb diamonds are clearly observed in a chemically anchored Au nanoparticle single-electron transistor. The stability diagrams show stable Coulomb blockade phenomena and agree with the theoretical curve calculated using the orthodox model. The resistances and capacitances of the double-barrier tunneling junctions between the source electrode and the Au core (R1 and C1, respectively), and those between the Au core and the drain electrode (R2 and C2, respectively), are evaluated as 4.5 MΩ, 1.4 aF, 4.8 MΩ, and 1.3 aF, respectively. This is determined by fitting the theoretical curve against the experimental Coulomb staircases. Two-methylene-group short octanedithiols (C8S2) in a C8S2/hexanethiol (C6S) mixed self-assembled monolayer is concluded to chemically anchor the core of the Au nanoparticle at both ends between the electroless-Au-plated nanogap electrodes even when the Au nanoparticle is protected by decanethiol (C10S). This is because the R1 value is identical to that of R2 and corresponds to the tunneling resistances of the octanedithiol chemically bonded with the Au core and the Au electrodes. The dependence of the Coulomb diamond shapes on the tunneling resistance ratio (R1/R2) is also discussed, especially in the case of the rhombic Coulomb diamonds. Rhombic Coulomb diamonds result from chemical anchoring of the core of the Au nanoparticle at both ends between the electroless-Au-plated nanogap electrodes.

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Section: Resultsmentioning

confidence: 99%

“…12 For the majority of the experimentally reported Coulomb diamonds, including those in our previous reports, the diamonds were parallelograms rather than rhombuses, because of differences between C 1 and C 2 . 48,49,[54][55][56] In contrast, comparable C 1 and C 2 result in the almost rhombic diamond shapes apparent in Fig. 4(a) and (b).…”

Section: Introductionmentioning

confidence: 90%

Rhombic Coulomb diamonds in a single-electron transistor based on an Au nanoparticle chemically anchored at both ends

et al. 2016

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“…Electrically stable SETs (chemically assembled SETs) have been demonstrated by using the same chemisorption process to deposit a single synthesized Au NP between size-regulated nanogap electrodes formed by electroless-gold plating. 54,[60][61][62][63][64][65] Therefore, chemisorption is more promising than physisorption for stable and ideal electrical transport through the NPs by STM and STS.…”

Section: Synthesized Nanoparticlesmentioning

confidence: 99%

“…Several applications for NPs have been reported: singleelectron transistors (SETs), 53,54,[56][57][58][59][60][61][62][63][64][65][66][67][68] switches, 31,69 and lightemitting diodes. 31,70 To design nanodevices with NPs, it is necessary to evaluate the intrinsic properties of a single NP, such as the conductivity and quantum tunneling effect.…”

Section: Introductionmentioning

confidence: 99%

Nanoparticle characterization based on STM and STS

2015

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In this review, we describe recent progress made in the study of nanoparticles characterized by scanning tunneling microscopy (STM) and scanning tunneling spectroscopy (STS). Basic principles of STM measurements and single-electron tunneling phenomena through a single NP are summarized. We highlight the results of electrical and photonic properties on NPs studied by STM and STS. Because nanoparticles are single-digit nanometre in diameter, a single-electron transport on individual nanoparticles such as Coulomb blockade and resonant tunneling through discrete energy levels are investigated. Photon-emission from NPs is also introduced based on STM measurements. Novel single-nanoparticle functions such as stochastic blinking and one-write erasing behaviours are presented. This review provides an overview of nanoparticle characterization methods based on STM and STS that include the detailed understanding of the electrical and photonics properties of nanoparticles.

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“…Hybrid insulators of SAMs and inorganic bilayers show good gate insulator properties when used in organic thin-film transistors [ 32 – 35 ]. We have also demonstrated chemically assembled transistors made by utilizing a hybrid passivation bilayer [ 36 ]. SiN was prepared by catalytic chemical vapor deposition (CAT-CVD) at 338 K onto alkanethiol and alkanedithiol mixed SAMs to form a hybrid passivation bilayer, and a top-gate electrode was added on the Au nanoparticle via an EBL overlay method at a process temperature of 423 K [ 36 , 37 ].…”

Section: Introductionmentioning

confidence: 99%

Three-input gate logic circuits on chemically assembled single-electron transistors with organic and inorganic hybrid passivation layers

Majima

Hackenberger

Azuma

et al. 2017

Science and Technology of Advanced Materials

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Single-electron transistors (SETs) are sub-10-nm scale electronic devices based on conductive Coulomb islands sandwiched between double-barrier tunneling barriers. Chemically assembled SETs with alkanethiol-protected Au nanoparticles show highly stable Coulomb diamonds and two-input logic operations. The combination of bottom-up and top-down processes used to form the passivation layer is vital for realizing multi-gate chemically assembled SET circuits, as this combination enables us to connect conventional complementary metal oxide semiconductor (CMOS) technologies via planar processes. Here, three-input gate exclusive-OR (XOR) logic operations are demonstrated in passivated chemically assembled SETs. The passivation layer is a hybrid bilayer of self-assembled monolayers (SAMs) and pulsed laser deposited (PLD) aluminum oxide (AlO), and top-gate electrodes were prepared on the hybrid passivation layers. Top and two-side-gated SETs showed clear Coulomb oscillation and diamonds for each of the three available gates, and three-input gate XOR logic operation was clearly demonstrated. These results show the potential of chemically assembled SETs to work as logic devices with multi-gate inputs using organic and inorganic hybrid passivation layers.

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Silicon–Nitride-Passivated Bottom-Up Single-Electron Transistors

Cited by 9 publications

References 22 publications

Rhombic Coulomb diamonds in a single-electron transistor based on an Au nanoparticle chemically anchored at both ends

Rhombic Coulomb diamonds in a single-electron transistor based on an Au nanoparticle chemically anchored at both ends

Nanoparticle characterization based on STM and STS

Three-input gate logic circuits on chemically assembled single-electron transistors with organic and inorganic hybrid passivation layers

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