Air-stable ambipolar organic thin-film transistors based on an organic homostructure

Ye, Rongbin; Baba, Mamoru; Oishi, Yoshiyuki; Suzuki, Kazunori

doi:10.1063/1.1949731

Cited by 86 publications

(53 citation statements)

References 17 publications

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“…V T,p and V T,n are the threshold voltage for p-and n-type FET characteristics, respectively. Such a steep increase in the I ds is a typical characteristic of ambipolar OFETs [12,13]. In this voltage range (jV ds j P jV g j + jV T,n j), the gate contact exhibits a positive bias with respect to the drain contact.…”

Section: Resultsmentioning

confidence: 97%

Ambipolar organic phototransistor

et al. 2007

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Section: Resultsmentioning

confidence: 97%

Ambipolar organic phototransistor

et al. 2007

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“…[16,37] Quinone moieties were introduced into the p-core here to further stabilize the LUMO and enable air-stable n-channel FET operation. Previous reports on NDI-F [16,29] and CuF 16 Pc [27,[30][31][32] proposed that LUMO energies below À3.9 eV are sufficient to enable air-stable n-channel FET operation for perfluoroalkyl-substituted semiconductors. The present computational modeling reveals that introduction of either bithiophene-quinone (21), phenanthrenequinone, or pyrene-4,5,9,10-tetraone (24) fragments can displace the LUMO energy below this À3.9 eV threshold.…”

Section: à6mentioning

confidence: 99%

“…www.chemeurj.org F), [23,28,29] and has also been shown to be applicable to perfluorinated copper phthalocyanine (CuF 16 Pc) [27,[30][31][32][33][34][35] and to fluoroacyl-substituted oligothiophenes (e.g., DFCO-4 TCO). [36] Unfortunately, each of these materials exhibits device performance degradation over the period of hours to days in air.…”

Section: Introductionmentioning

confidence: 99%

Phenacyl–Thiophene and Quinone Semiconductors Designed for Solution Processability and Air‐Stability in High Mobility n‐Channel Field‐Effect Transistors

Letizia

Cronin

Ortiz

et al. 2010

Chemistry A European J

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Electron-transporting organic semiconductors (n-channel) for field-effect transistors (FETs) that are processable in common organic solvents or exhibit air-stable operation are rare. This investigation addresses both these challenges through rational molecular design and computational predictions of n-channel FET air-stability. A series of seven phenacyl-thiophene-based materials are reported incorporating systematic variations in molecular structure and reduction potential. These compounds are as follows: 5,5'''-bis(perfluorophenylcarbonyl)-2,2':5',- 2'':5'',2'''-quaterthiophene (1), 5,5'''-bis(phenacyl)-2,2':5',2'': 5'',2'''-quaterthiophene (2), poly[5,5'''-(perfluorophenac-2-yl)-4',4''-dioctyl-2,2':5',2'':5'',2'''-quaterthiophene) (3), 5,5'''-bis(perfluorophenacyl)-4,4'''-dioctyl-2,2':5',2'':5'',2'''-quaterthiophene (4), 2,7-bis((5-perfluorophenacyl)thiophen-2-yl)-9,10-phenanthrenequinone (5), 2,7-bis[(5-phenacyl)thiophen-2-yl]-9,10-phenanthrenequinone (6), and 2,7-bis(thiophen-2-yl)-9,10-phenanthrenequinone, (7). Optical and electrochemical data reveal that phenacyl functionalization significantly depresses the LUMO energies, and introduction of the quinone fragment results in even greater LUMO stabilization. FET measurements reveal that the films of materials 1, 3, 5, and 6 exhibit n-channel activity. Notably, oligomer 1 exhibits one of the highest mu(e) (up to approximately = 0.3 cm(2) V(-1) s(-1)) values reported to date for a solution-cast organic semiconductor; one of the first n-channel polymers, 3, exhibits mu(e) approximately = 10(-6) cm(2) V(-1) s(-1) in spin-cast films (mu(e)=0.02 cm(2) V(-1) s(-1) for drop-cast 1:3 blend films); and rare air-stable n-channel material 5 exhibits n-channel FET operation with mu(e)=0.015 cm(2) V(-1) s(-1), while maintaining a large I(on:off)=10(6) for a period greater than one year in air. The crystal structures of 1 and 2 reveal close herringbone interplanar pi-stacking distances (3.50 and 3.43 A, respectively), whereas the structure of the model quinone compound, 7, exhibits 3.48 A cofacial pi-stacking in a slipped, donor-acceptor motif.

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“…measurements under high vacuum). An effi cient and convenient method for achieving this is to combine high mobility n-and p-type organic semiconductors and use them as the active layer in the device [6,17,21,22,31]. However, in most materials tested so far, the mobility of electrons and/or holes in ambipolar OFETs is much lower than that of unipolar OFETs.…”

Section: Double-layer Heterostructure and Ambipolar Transport In Ofetsmentioning

confidence: 99%

Organic heterostructures in organic field-effect transistors

2010

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C onsiderable eff ort has been devoted to the development of low-cost, fl exible, large-area organic electronics for consumer products over the past two decades [1][2][3]. Organic fi eld-eff ect transistors (OFETs), important organic electronic devices, are of considerable interesting due to their wide range of potential applications, including use as display drivers and in identifi cation tags and sensors. Many methods have been developed to improve OFET performance by increasing mobility and the on/off ratio, and by reducing the threshold voltage. Th ese improvements have been achieved through the synthesis of new organic semiconductor materials, improving the device structure, controlling the deposition of crystalline organic fi lms and adopting various organic heterostructures. Recently, OFETs exhibiting mobility of the same order of magnitude as that of amorphous silicon FETs have been successfully demonstrated.Organic heterostructures have been used in organic light-emitting diodes (OLEDs) and organic photovoltaic (OPV) cells to improve device performance. In a typical double-layer OLED structure [4], the organic heterojunction reduces the onset voltage and improves the illumination effi ciency. Organic heterojunctions have also been used to improve the power conversion effi ciency of OPV cells by an order of magnitude over single-layer cells [5]. Ambipolar OFETs, which require that both electrons and holes be accumulated and transported in the device channel depending on the applied voltage, were fi rst realized by introducing organic heterostructures as active layers [6]. It is therefore clear that organic heterostructures have an important role in the continued development of organic electronic devices. Th e introduction of organic heterostructures has signifi cantly improved device performance and allowed new functions in many applications, and so understanding the eff ects of the organic heterostructure is desirable and necessary.Th ere has been considerable focus on understanding the interfacial electronic structures of organic heterostructure consisting of amorphous or semi-crystalline organic semiconductors [7][8][9]. Various models have been proposed to predict the alignment of the vacuum level and the interface dipole in certain organic heterojunctions [8,9], and a dependence of the interface dipole on the molecular orientation has been reported [10]. In crystalline organic semiconductors, the phenomenon of band bending [11,12] has been observed at organic/inorganic and organic/organic interfaces, and band transport, in which orbital-derived electronic bands are produced due to the overlap of the π-orbitals of adjacent molecules, has also been argued [13].Th e recent discovery of high conductivity in heterojunction transistors constructed using thin crystalline fi lms of p-type copper phthalocyanine (CuPc) and n-type copper-hexadecafl uoro-phthalocyanine (F 16 CuPc) as active layers has stimulated interest in organic heterojunctions [14][15][16]. Electron-and hole-accumulation layers have been ob...

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Air-stable ambipolar organic thin-film transistors based on an organic homostructure

Cited by 86 publications

References 17 publications

Ambipolar organic phototransistor

Ambipolar organic phototransistor

Phenacyl–Thiophene and Quinone Semiconductors Designed for Solution Processability and Air‐Stability in High Mobility n‐Channel Field‐Effect Transistors

Organic heterostructures in organic field-effect transistors

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