Ambipolar organic thin-film transistors (TFTs) based on a fluorinated copper phthalocyanine (F16CuPc)∕copper phthalocyanine (CuPc) homostructure layer were fabricated and characterized. The homostructure TFTs showed typical air-stable ambipolar characteristics, with hole and electron mobilities of 1.44×10−3 and 9.97×10−4cm2∕Vs, respectively, which are comparable to unipolar mobilities in these single-layer devices. X-ray diffraction analysis suggests highly ordered F16CuPc and CuPc polycrystalline thin films could be continuously grown via an intermediate-phase layer in the homostructure.

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We report on the fabrication of organic thin-film transistors based on fluorinated copper phthalocyanine (F16CuPc) and copper phthalocyanine (CuPc) layers. The thin-film transistors showed high-performance air-stable ambipolar characteristics with a field-effect hole mobility of 3.26 ×10-3 cm2/V·s and a field-effect electron mobility of 3.34 ×10-3 cm2/V·s, which are comparable to the unipolar field-effect mobilities of single-layer thin-film transistors. These outstanding ambipolar characteristics, along with the highly stable chemical nature of F16CuPc and CuPc, make this transistor an attractive candidate for organic complementary metal oxide semiconductor (CMOS) circuits.

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