Air-gap transmission lines for OEICs and MMICs using glass substrates

Chuang, Jeff; El-Ghazaly, S.M.; Schroder, D.K.; Zhang, Y.H.; Maracas, G. N.; Reyes, A.C.

doi:10.1109/mwsym.1997.604570

Cited by 6 publications

(4 citation statements)

References 4 publications

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“…4(a)). This is, firstly, due to the air between signal and ground metals presents less losses than silicon [10] and polymer. Secondly, after etching the BCB and silicon, fewer fields couple and penetrate into the silicon substrate, as shown in the field simulation in Fig.…”

Section: Improvement By Etching Polymermentioning

confidence: 99%

Fabrication techniques and RF performances of transmission lines on polymer substrates

Wang

Cai

Ativanichayaphong

et al. 2005

Microelectronics: Design, Technology, and Packaging II

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The advantages of polymers have made them popular choices in many micro device applications. The benefits of low material and fabrication costs have been demonstrated in many micro-fluidic devices. The low conductivities and low dielectric constants of polymers provide potentials for high quality-factor RF MEMS applications. Nevertheless, the extension of using polymers for electronic components has not been well explored. In this work, we investigated the fabrication processes and RF performances of coplanar waveguide (CPW) transmission lines, with which many RF MEMS phase shifters, tuners, switches and interconnects are built, on polymer dielectric layers. In order to achieve optimum results, the CPW transmission lines were fabricated on benzocyclobutene (BCB), kapton and polyimide polymers. Our experimental results indicated very low insertion losses of CPW transmission lines with BCB as a dielectric layer and with kapton as substrate, and a moderate insertion loss with polyimide as a dielectric layer.

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Section: Improvement By Etching Polymermentioning

confidence: 99%

Fabrication techniques and RF performances of transmission lines on polymer substrates

Wang

Cai

Ativanichayaphong

et al. 2005

Microelectronics: Design, Technology, and Packaging II

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“…Kim [7] and Ko [8], for example, used a 10-m thick polyimide dielectric and a 4-m thick aluminum layer on 0018-9200/01$10.00 © 2001 IEEE top of the conventional metallization. Chuang [9] used a glass substrate and a 15-m air gap, and Sakai [10] used a 26-m thick benzocyclobutene (BCB) dielectric. Rheinfelder [11] used an 8000 cm silicon substrate, while Burghartz [12] used copper metallization and silicon substrates with resistivities of 10 and 1000 cm, as well as sapphire substrates.…”

Section: Introductionmentioning

confidence: 99%

Correction to "exploiting CMOS reverse interconnect scaling in multigigahertz amplifier and oscillator design"

Kleveland

Diaz

Vook

et al. 2002

IEEE J. Solid-State Circuits

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The increasing number of interconnect layers that are needed in a CMOS process to meet the routing and power requirements of large digital circuits also yield significant advantages for analog applications. The reverse thickness scaling of the top metal layer can be exploited in the design of low-loss transmission lines. Coplanar transmission lines in the top metal layers take advantage of a low metal resistance and a large separation from the heavily doped silicon substrate. They are therefore fully compatible with current and future CMOS process technologies. To investigate the feasibility of extending CMOS designs beyond 10 GHz, a wide range of coplanar transmission lines are characterized. The effect of the substrate resistivity on coplanar wave propagation is explained. After achieving a record loss of 0.3 dB/mm at 50 GHz, coplanar lines are used in the design of distributed amplifiers and oscillators. They are the first to achieve higher than 10-GHz operating frequencies in a conventional CMOS technology.

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“…In this paper, we present air-gap spiral inductor structures using glass microbump bonding (GMBB) technique [5]. The main idea of this approach is that low loss glass substrates with precise controlled glass bump height can be used as the upper metal layer support.…”

Section: Introductionmentioning

confidence: 99%

“…All inductors structures were designed to include a 420 pm long CPW microwave launcher for on-wafer characterization. The fabrication process of glass microbump can be found in [5]. To further investigate the relation between air-gap height and parasitic capacitance of inductors, several different turns of air-gap spiral inductors with different glass bump height were fabricated.…”

Section: Introductionmentioning

confidence: 99%

Low loss air-gap spiral inductors for MMICs using glass microbump bonding technique

Chuang

El-Ghazaly

El‐Zein

et al.

1998 IEEE MTT-S International Microwave Symposium Digest (Cat. No.98CH36192)

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Air-gap transmission lines for OEICs and MMICs using glass substrates

Cited by 6 publications

References 4 publications

Fabrication techniques and RF performances of transmission lines on polymer substrates

Fabrication techniques and RF performances of transmission lines on polymer substrates

Correction to "exploiting CMOS reverse interconnect scaling in multigigahertz amplifier and oscillator design"

Low loss air-gap spiral inductors for MMICs using glass microbump bonding technique

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