Air-gap guard ring for pixel sensitivity and crosstalk improvement in deep sub-micron CMOS image sensor

Yaung, Dun–Nian; Wuu, Shou-Gwo; Chien, Hung‐Chang; Hsu, Tzu-Hsuan; Tseng, Chien-Hsien; Lin, J.S.; Chen, Jieh-Jang; Lo, Chin-Hsin; Yu, C.Y.; Tsai, C.S.; Wang, C.S.

doi:10.1109/iedm.2003.1269308

Cited by 9 publications

(1 citation statement)

References 6 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…In the pixel structure, including shifted microlens [8] and zero gap microlens [9], plasmonic color filter [10,11,12,13] and lensed color filter [14], optimized light guidance structure [15,16]. As for the process development, deep p-well around photodiode [17], deep trench isolation (DTI) [18] including frontside-illumination DTI [19], backside-illumination [20] and capacitor DTI [21], air-gap guard ring [22,23,24,25], anti-reflection film coating [26] and buried shield metal [27] are all applied to optimize the crosstalk behavior respectively. PMOS structure [28] also make sense due to its limit in diffusion.…”

Section: Introductionmentioning

confidence: 99%

A novel method to test and optimize the periphery crosstalk in CMOS image sensor

Liu

Zhang

Shen

2020

IEICE Electron. Express

View full text Add to dashboard Cite

For the purpose of reducing the peripheral crosstalk occur in the edge pixel, we illustrated a method to test and quantify the intensity of this crosstalk, and setup a model combining the opposite incident light and color construction. With the aid of the method and model, we conducted many experiments to analyze and compare the improvement measures, finding that the increase of pixel edge to package edge distance, sealing glass thinning and black photoresist coating around edge are all effective to reduce the peripheral crosstalk. Moreover, considering the effect and cost, the sealing glass thinning is the relatively best measure.

show abstract

Section: Introductionmentioning

confidence: 99%

A novel method to test and optimize the periphery crosstalk in CMOS image sensor

Liu

Zhang

Shen

2020

IEICE Electron. Express

View full text Add to dashboard Cite

show abstract

High performance 300mm backside illumination technology for continuous pixel shrinkage

Yaung

Hsieh

Wang

et al. 2011

2011 International Electron Devices Meeting

View full text Add to dashboard Cite

Backside Illumination (BSI) sensor with excellent optical performance has become the main-stream CMOS image sensor process. This work addressed the key factors and issues for 300mm BSI technology, including wafer distortion, silicon thickness variation, backside junction formation and dielectric film structure, thermal annealing and so on. It is demonstrated that with the optimized key process, a high performance 0.9um BSI pixel with low noise can be fabricated.

show abstract

Dramatic Reduction of Optical Crosstalk in Deep-Submicrometer CMOS Imager With Air Gap Guard Ring

Hsu

Fang

Yaung

et al. 2004

IEEE Electron Device Lett.

Self Cite

View full text Add to dashboard Cite

A novel dielectric structure, air gap guard ring, has been successfully developed to reduce optical crosstalk thus improving pixel sensitivity of CMOS image sensor with 0.18-m technology. Based on refraction index (RI) differences between dielectric films (RI = 1 4 1 6) and air gap (RI = 1), total internal reflection occurred at dielectric-film/ air-gap interface, thus the incident light is concentrated in selected pixel. Excellent optical performances have been demonstrated in 3.0 3.0 m pixel. Optical spatial crosstalk achieves 80% reduction at 20 incidence angle and significantly alleviates the pixel sensitivity degradation with larger angle of incident light.

show abstract

Air-gap guard ring for pixel sensitivity and crosstalk improvement in deep sub-micron CMOS image sensor

Cited by 9 publications

References 6 publications

A novel method to test and optimize the periphery crosstalk in CMOS image sensor

A novel method to test and optimize the periphery crosstalk in CMOS image sensor

High performance 300mm backside illumination technology for continuous pixel shrinkage

Dramatic Reduction of Optical Crosstalk in Deep-Submicrometer CMOS Imager With Air Gap Guard Ring

Contact Info

Product

Resources

About