Air bridge and via hole technology for GaAs based microwave devices

Boron Implant Isolation For High Temperature GaAs Integrated Circuits

“…Already a few studies have been made using proton (6)(7)(8), oxygen (9,10), and boron (11)(12)(13)(14)(15) as implant species for the isolation purposes. However, different results were obtained on carrier removal rate and thermal stability mainly due to difference in impurity concentration of starting material and difference in device fabrication sequences (16).…”