Ag/HfO&lt;inf&gt;2&lt;/inf&gt; based threshold switch with extreme non-linearity for unipolar cross-point memory and steep-slope phase-FETs

Shukla, Nikhil; Grisafe, Benjamin; Ghosh, Ram Krishna; Jao, N.; Aziz, Ahmedullah; Frougier, Julien; Jerry, Matthew; Sonde, Sushant; Rouvimov, Sergei; Orlova, Tatyana; Gupta, Sumeet Kumar; Datta, Suman

doi:10.1109/iedm.2016.7838542

Cited by 36 publications

(31 citation statements)

References 4 publications

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“…Though the nonlinear selectors can be developed for the most studied bipolar RRAM array, there is always a tradeoff that when larger operating voltages are used to output high selectivity (ON/OFF ratio) and ON-state current, there will be a large leakage current. By comparison, cation-based TS selectors dominated by formation/spontaneous-rupture of fragile conductive filaments (CFs) have been proved to possess low voltages, high selectivity, and ultra-low leakage current [22,23]. Furthermore, 1S1R configuration comprising cation-based selectors functions well indicating the feasibility of future high-density integration of 1S1R RRAM array [24,25].…”

Section: Introductionmentioning

confidence: 99%

Flexible cation-based threshold selector for resistive switching memory integration

Zhao

Wang

Xiao

et al. 2018

Sci. China Inf. Sci.

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Emerging resistive switching random access memory (RRAM), considered as the most promising candidate of flash memory, is favorable for in flexible electronic system. However, in high density flexible crossbar RRAM array, crosstalk issue that currents from the neighboring unselected cell lead to failure of write and read operations, still keeps a main bottleneck. Therefore, flexible selector compatible with the flexibility of the RRAM array should be focused on to configure one selector-one resistor (1S1R) system, which is immune to crosstalk issue. In this paper, flexible cation-based threshold switching (TS) selectors (Pt/Ag/HfO 2 /Pt/Ti/parylene) are fabricated and the compressive performance is studied systematically. The device shows excellent bidirectional volatile TS characteristics, including high selectivity ratio (10 9 ), low operating voltages (|V TH |<1 V), ultra-low leakage current (∼10 −13 A) and good flexibility. The successful demonstration of the wire connected 1S1R unit comprising this flexible selector and one bipolar resistor cell indicates the great potential of this cation-based selector to restrain the crosstalk issue in a large flexible RRAM array.Keywords cation-based threshold switching, resistive switching, flexible selector, conductive filament (CF), 1S1R CitationZhao X L, Wang R, Xiao X H, et al. Flexible cation-based threshold selector for resistive switching memory integration. Sci China Inf Sci, 2018, 61(6): 060413, https://doi.

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Section: Introductionmentioning

confidence: 99%

Flexible cation-based threshold selector for resistive switching memory integration

Zhao

Wang

Xiao

et al. 2018

Sci. China Inf. Sci.

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“…Indeed, a much smaller voltage also would pass through the device with the subsequent read voltage pulse. This is because it also causes a sneak current, as shown in Figure 2(a), although it is two order of magnitude smaller than ON current [6], [25]. The operation speed is faster than the Ag doped HfO 2 selector without GO (75 ns/ 250 ns for ON/OFF operations [7]).…”

Section: Resultsmentioning

confidence: 98%

Flexible HfO₂/Graphene Oxide Selector With Fast Switching and High Endurance

Zhou

Zhang

Zhu

et al. 2019

IEEE J. Electron Devices Soc.

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Selector is considered as a promising solution to solve sneak-path current for high-density 3-Dimensional (3D) memories. However, bidirectional selector with fast speed and long lifetime is still extremely needed. In this work, 2D material of graphene oxide containing epoxide, hydroxyl and carboxyl (-COOH,-OH, >C=O) is assembled with HfO 2 to form a flexible bi-layer selector. Interestingly, the selector exhibits excellent uniformity, fast switching speed (∼160 ns) and remarkable endurance of ∼5×10 8 cycles. Moreover, no performance degradation is observed for more than 10 3 times with the bending radii ranging from 40 mm to 20 mm. The high uniformity and excellent endurance may be attributed to the insulating interface layer at the HfO 2 /GO interface, which plays a vital role on the connection/disrupt of conductive filament (CF). Thus, the incorporation of GO into HfO 2 selector may be a feasible way to achieve a promising HfO 2-based selector, which have potential applications in high-density 3D integration for flexible electronics.

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“…The threshold selectors (i.e., TS devices) can be turned on at ~ 0.25 V and show ~ 6 orders of abrupt threshold switching at 10 μA compliance current. In 2016, Shukla et al have also showed the phase FET with HfO 2 -based TS device, for the first time [ 91 ]. The HfO 2 -based TS device can be worked as the threshold selector at 100 μA compliance current.…”

Section: Negative Differential Resistance Fet (Phase Fet)mentioning

confidence: 99%

Steep switching devices for low power applications: negative differential capacitance/resistance field effect transistors

Shin

2018

Nano Convergence

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Simply including either single ferroelectric oxide layer or threshold selector, we can make conventional field effect transistor to have super steep switching characteristic, i.e., sub-60-mV/decade of subthreshold slope. One of the representative is negative capacitance FET (NCFET), in which a ferroelectric layer is added within its gate stack. The other is phase FET (i.e., negative resistance FET), in which a threshold selector is added to an electrode (e.g., source or drain) of conventional field effect transistor. Although the concept of the aforementioned two devices was presented more or less recently, numerous studies have been published. In this review paper, by reviewing the published studies over the last decade, we shall de-brief and discuss the history and the future perspectives of NCFET/phase FET, respectively. The background, experimental investigation, and future direction for developing the aforementioned two representative steep switching devices (i.e., NCFET and phase FET/negative resistance FET) are to be discussed in detail.

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Ag/HfO<inf>2</inf> based threshold switch with extreme non-linearity for unipolar cross-point memory and steep-slope phase-FETs

Cited by 36 publications

References 4 publications

Flexible cation-based threshold selector for resistive switching memory integration

Flexible cation-based threshold selector for resistive switching memory integration

Flexible HfO₂/Graphene Oxide Selector With Fast Switching and High Endurance

Steep switching devices for low power applications: negative differential capacitance/resistance field effect transistors

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Ag/HfO<inf>2</inf> based threshold switch with extreme non-linearity for unipolar cross-point memory and steep-slope phase-FETs

Cited by 36 publications

References 4 publications

Flexible cation-based threshold selector for resistive switching memory integration

Flexible cation-based threshold selector for resistive switching memory integration

Flexible HfO2/Graphene Oxide Selector With Fast Switching and High Endurance

Steep switching devices for low power applications: negative differential capacitance/resistance field effect transistors

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Product

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Flexible HfO₂/Graphene Oxide Selector With Fast Switching and High Endurance