Flexible cation-based threshold selector for resistive switching memory integration

Zhao, Xiaolong; Wang, Rui; Xiao, Xin; Lu, Congyan; Wu, Facai; Cao, Rongrong; Jiang, Changzhong; Liu, Qi

doi:10.1007/s11432-017-9352-0

Cited by 16 publications

(10 citation statements)

References 36 publications

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“…TiW/CuS/GeSe/ Pt [101] Unidirectional 600 µA 1.25 × 10 9 0. Ag/HfO 2 /Pt/Ti/ PET [38] Bidirectional 100 µA 10 9 ≈0.7 V ≈ 1 mV dec −1 >200 Single layer Selectors Au/ SiO 2 :Ag/Au [92] Unidirectional 100 nA 10 5 ≈0.9 and the corresponding read margin reduction. A large range of access devices coupled with memristors have been investigated to address the issue, such as 1D1R [64] (one-diode-onememristor), 1T1R [65] (one-transistor-one-memristor), CRS [66] (complementary resistive switching memory) and 1S1R [9a,67] (one-selector-one-memristor).…”

Section: Selectorsmentioning

confidence: 99%

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Design of a Controllable Redox‐Diffusive Threshold Switching Memristor

Sun

Song

Yin

et al. 2020

Adv Elect Materials

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In most cases, the current flows uniformly through the device in the HRS and is restricted to a local region with high conductance known as a conducting filament (CF) in the LRS. [3] Among them, a specific memory device is termed as conductivebridge RRAM (CBRAM), where the formation/rupture of metallic conductive filaments are dominated by cation migration and redox processes. [4] Meanwhile, volatile resistance switching behaviors are commonly observed in CBRAM as threshold switching (TS). Analogous to the nonvolatile electrochemical metallization mechanism in terms of materials and structures, [5] the electrical resistance of such a threshold switching memristor (TSM) could decrease by orders of magnitude when an electric field is applied due to the formation of CFs with active metal (such as Ag or Cu) atoms. [6] Differently, the resistance returns back spontaneously after the termination of the external bias, yielding a superior I-V nonlinearity and unique temporal conductance evolution dynamics. [7] Recent years, the threshold switching memristors based on active metals are also called "diffusive memristors" to emphasize the diffusion dynamics of the metal species. [8] To be more comprehensively, redox-diffusive threshold switching memristor (RDTSM) might be the best choice to demonstrate the overall switching behavior. [1a] RDTSM has gained significant attention due to its similar advantages to RRAM, such as the simple structure, great fabricability and integrability, and compatibility with conventional CMOS technology. More importantly, it has great potential in many vital applications, such as two-terminal selectors with high nonlinearity, [9] high-powerefficient synaptic or neuronal devices with novel functions. [8,10] A specific application requires a correspondingly proper device. Figure 1 displays the measurement schematic of the key parameters of RDTSM, including selectivity (or nonlinearity), compliance currents, switching voltages (including threshold voltages and hold voltages),TS mode (unidirectional and bidirectional, as shown in Figure 1a,b, respectively), switching slopes (Figure 1c), response time (including delay and relaxation, as shown in Figure 1d) and endurance, which are all up to the material composition and device structure. [11] Therefore, With the rapid development of information technique in the big-data era, there is an extremely urgent demand for new circuit building blocks, represented by resistive switching memristors with high speed, high-density integration, and power-efficiency, to overcome the limitations of electronic device scaling and thus achieve non-von-Neumann neuromorphic computing. Redox-diffusive threshold switching memristors, based on the volatile formation/rupture of metallic conductive filaments, are attracting great attention for many novel applications, ranging from selectors to synaptic and neuronal devices. Here, how to design a proper redox-diffusive threshold switching memristor is comprehensively introduced, with particular focus on the effect of the devic...

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Section: Selectorsmentioning

confidence: 99%

“…However, bidirectional TS behaviors are indeed observed in AHP memristors just like ASP. [ 38 ] To clarify the underlying mechanism, we propose in Figure a phenomenological model for two different modes in the AHP devices. As mentioned above, the TSM device demands an electroforming process to activate the reversible TS behaviors.…”

Section: Electrodesmentioning

confidence: 99%

Design of a Controllable Redox‐Diffusive Threshold Switching Memristor

Sun

Song

Yin

et al. 2020

Adv Elect Materials

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“…Metal-oxide resistive random access memory (RRAM) has been extensively studied and considered as the next generation nonvolatile memory device due to its fab-friendly feature, fast switching speed and low energy consumption [1][2][3][4], especially for embedded application. Meanwhile, many researches have been conducted to reveal the conductive mechanism [3][4][5]. The most compelling physical model is the "conducting filament model", which has been demonstrated by many researchers [6][7][8].…”

Section: Introductionmentioning

confidence: 99%

Low power and high uniformity of HfOx-based RRAM via tip-enhanced electric fields

Zhang

Wang

et al. 2019

Sci. China Inf. Sci.

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In this paper, the HfOx-based resistive random access memory (RRAM) devices with sub-100 nm pyramid-type electrodes were fabricated. With the help of tip-enhanced electric field around the pyramid-type electrodes, it was experimentally demonstrated that the novel devices have better cycle-to-cycle variation control, lower forming/set voltage (1.97/0.7 V) and faster switching speed ( 30 ns under 0.9 V pulse) as well as better endurance reliability than conventional flat electrode resistive memory devices. In addition, the novel RRAM is experimentally demonstrated with independence of electrode number for the first time to present great potential in scaling down. This novel structure metal-oxide based RRAM will be suitable for the future low-power non-volatile memory application.

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“…Dear editor, Resistive random access memory (RRAM), one of the most promising emerging non-volatile memory technologies, has been extensively investigated by researchers from both academia and industry due to its fast speed and excellent scalability for storage class memory (SCM) [1][2][3]. To achieve large-scale integration in an RRAM array, each cell needs to contain a nonlinear device to eliminate the sneak path which may lead to false program and read-margin narrowing [2,3]. Usually, transistors or selectors are serially connected to RRAM cells to act as the selective elements.…”

mentioning

confidence: 99%

“…Usually, transistors or selectors are serially connected to RRAM cells to act as the selective elements. Though effective, transistors will consume more area which undermines the scalability potential while some nonlinear devices may demand either non-conventional material or multilayer-film controllability during fabrication processes [2,3]. Recently, researchers have shown interest in threshold-switching selectors without additional area or processes.…”

mentioning

confidence: 99%