Ag-GaP schottky photodiodes for UV sensors

Pikhtin, A. N.; Тарасов, С. А.; Kloth, B.

doi:10.1109/ted.2002.807247

Cited by 19 publications

(7 citation statements)

References 2 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…According to the thermionic emission model, 19 the current-voltage characteristic of a Schottky junction is given by Equation 1. I = A * AT 2 (e −βϕ B ) e βV/n − 1 [1] where A * is the effective Richardson constant (50 A.cm −2 .K −2 for GaP, 20 A is the area of the diode, ϕ B is the Schottky barrier height, n is the diode ideality factor, T is the temperature (K), V is the applied voltage, β is the thermal voltage and is given by β = q/(k B T); q being the electronic charge and k B is the Boltzmann constant. A barrier height of ϕ B = 1.03 eV and a diode ideality factor, n = 1.5 were estimated from the forward I-V characteristics.…”

Section: Resultsmentioning

confidence: 99%

“…Applications of silicon based photodiodes for UV and low-energy X-ray detection [1][2][3][4] are limited in environments with high infrared background, such as in most medical and space applications. [5][6][7] Wide bandgap GaP makes it highly transparent to the infrared radiations and also implies high threshold responsivity and low thermally induced noises which are prerequisites for efficient UV and low energy X-ray detection and imaging.…”

mentioning

confidence: 99%

“…Gallium phosphide (GaP), due to its wide bandgap energy (E g = 2.27 eV at 300 K), has an immense scope of application in the field of ultraviolet (UV) and low-energy X-ray detection (sub-keV to -10 keV spectral range). Applications of silicon based photodiodes for UV and low-energy X-ray detection [1][2][3][4] are limited in environments with high infrared background, such as in most medical and space applications. [5][6][7] Wide bandgap GaP makes it highly transparent to the infrared radiations and also implies high threshold responsivity and low thermally induced noises which are prerequisites for efficient UV and low energy X-ray detection and imaging.…”

mentioning

confidence: 99%

See 2 more Smart Citations

Deep Level Studies in High-Resistive Gallium Phosphide Single Crystals

Das

Chaudhuri

Mandal

2015

ECS J. Solid State Sci. Technol.

View full text Add to dashboard Cite

In an attempt to explore the possibility of using wide bandgap gallium phosphide (GaP) single crystals as radiation detectors, high resistivity iron (Fe)-doped GaP single crystal was grown using a solid state diffusion (SSD) technique. The grown ingot showed a resistivity in the order of 10 8 -cm with an optical bandgap of 2.27 eV measured at room temperature. Schottky barrier diodes were fabricated by sputtering nickel (Ni) contacts on GaP wafers to study the deep level defects and junction properties. An effective donor concentration, N d = 2.6 × 10 16 cm −3 was calculated from the capacitance-voltage measurements. Deep level transient spectroscopy (DLTS) and current transient spectroscopy (CTS) were performed on the Schottky diodes to identify the electrically active defect levels in the grown high-resistive GaP crystals. DLTS measurements revealed the presence of several vacancies, impurities, and antisite defects centers with concentrations ranging from 10 14 -10 16 cm −3 . CTS measurements identified a new defect level in GaP crystals that could not be detected by the conventional DLTS scan due to very fast capacitance transients at temperatures below 100 K.

show abstract

Section: Resultsmentioning

confidence: 99%

mentioning

confidence: 99%

mentioning

confidence: 99%

See 1 more Smart Citation

Deep Level Studies in High-Resistive Gallium Phosphide Single Crystals

Das

Chaudhuri

Mandal

2015

ECS J. Solid State Sci. Technol.

View full text Add to dashboard Cite

show abstract

“…Maximal sensitivity of commercial GaP photodetectors based on Au-GaP Schottky barriers (G1962, EDP-365-0-2.5, JEP 5-365) fabricated by well-known companies Hamamatsu, Roithner LaserTechnik, and electro optical components (EOC) lies in the range of 0.07-0.12 A/W with electric parameters that do not exceed as reported here. More close parameters were rep orted for Ag-GaP photodetectors [25]; maximal spectral sensitivity of which was reported as 0.12 A/W.…”

Section: Optoelectronics -Advanced Device Structuresmentioning

confidence: 89%

Surface-Barrier Photodiodes with Transparent Electrodes for High-Performance Detection in the UV-NIR Spectrum

Malik¹,

Hidalga-Wade²

2017

Optoelectronics - Advanced Device Structures

View full text Add to dashboard Cite

The aim of this chapter is to present a short review in the field of design, fabrication technology, and testing of high-efficiency surface-barrier photodiodes with electrodes based on thin-film transparent conducting oxides (TCO) such as tin-doped indium oxide (ITO) and fluorine-doped tin oxide (FTO). Most of this review is based on our own results obtained and reported during the last 30 years. Besides a brief description of the low-cost spray pyrolysis deposition technique, mainly used in our work for deposition of the TCO films on a semiconductor surface, structural, morphological, and optoelectronic properties of these TCO films are discussed. As an example, a successful application of these TCO films is shown and used in high-efficiency surface-barrier photodiodes for a wide spectral range, from near ultraviolet (UV) to near infrared (NIR), and fabricated on different semiconductor substrates such as traditional Si, wide energy band ZnS, and GaP compound semiconductor substrates. The possible use of the Si surface-barrier structures as radiation-resistant detectors and gamma radiation detectors is discussed. The properties of high-efficiency surface-barrier photodiodes based on a perspective ternary semiconductor compound, Hg 3 In 2 Te 6 mercury indium telluride (MIT), for detection of 1.3 μm and 1.55 μm radiation for applications in fiber optics, are also reported.

show abstract

“…The selective UV surface-barrier sensors with perfect electrical characteristics have been analyzed in [3]. This selectivity was obtained thanks to the appropriate choice of a silver (Ag) film as the gate material.…”

mentioning

confidence: 99%

UV‐sensitive optical sensors based on ITO‐gallium phosphide heterojunctions

Malik

Hidalga-Wade

Zúňiga‐Islas

et al. 2010

Phys. Status Solidi (c)

View full text Add to dashboard Cite

Design and characteristics of wide‐band UV sensors based on ITO/GaP heterostructures are discussed. Such sensors have perfect electrical parameters and high UV‐visible sensitivity in comparison with surface‐barrier structures using a semi‐transparent thin metal film as an electrode. Many applications require UV sensors with an effective rejection of visible radiation and a wide temperature operating interval.For this aim, the theoretical modelling of extreme selective optical sensors with a double Ag/ITO thin film on the GaP surface, in which the thin silver film serves as a narrow bandpass filter at 320 nm, has been conducted. With this modelling the optimal thickness combination for the silver and ITO films was found for the maximum rejection of the sensitivity to visible radiation (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

show abstract

Ag-GaP schottky photodiodes for UV sensors

Cited by 19 publications

References 2 publications

Deep Level Studies in High-Resistive Gallium Phosphide Single Crystals

Deep Level Studies in High-Resistive Gallium Phosphide Single Crystals

Surface-Barrier Photodiodes with Transparent Electrodes for High-Performance Detection in the UV-NIR Spectrum

UV‐sensitive optical sensors based on ITO‐gallium phosphide heterojunctions

Contact Info

Product

Resources

About