The temperature coefficients of the refractive indices of Ge, Si, InAs, GaAs, InP, GaP, CdSe, ZnSe, and ZnS are\ud
measured by a prism technique in spectral ranges of up to X = 1 2 ,um at 15-350 C. Numerical values of equivalent oscillator\ud
parameters describing the n(X) dispersion, as well as the high-frequency e and low-frequency eo dielectric\ud
constants, are determined with precision. Taking into account the band structure of the above semiconductors, the\ud
values dn/dT have been calculated and show good agreement with experimental data
An investigation was made of the infrared absorption spectra of gallium phosphide single crystals doped with different impurities in the temperature range from 90 to 420 OK. With decreasing temperature a transformation of the absorption spectrum due to interband transitions between conduction band valleys to the absorption spectrum due to impurity states was observed. On the basis of a theoretical analysis of the results obtained, a number of parameters of the GaP band structure and impurity states characteristics have been determined.
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